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    Flip chip light emitting diode devices having thinned or removed substrates
    1.
    发明申请
    Flip chip light emitting diode devices having thinned or removed substrates 有权
    倒装芯片发光二极管器件具有减薄或移除的衬底

    公开(公告)号：US20050023550A1

    公开(公告)日：2005-02-03

    申请号：US10899864

    申请日：2004-07-27

    申请人： Ivan Eliashevich ,  Boris Kolodin ,  Emil Stefanov

    发明人： Ivan Eliashevich ,  Boris Kolodin ,  Emil Stefanov

    IPC分类号： H01L21/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

    CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.

    摘要翻译： 在制造倒装芯片发光二极管器件的方法中，外延层（14,114）沉积在生长衬底（16,116）上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件管芯（10,110）。 器件管芯（10,110）被倒装芯片结合到安装件（12,112）上。 倒装芯片接合包括通过将器件管芯（10,110）的至少一个电极（20,22，120）粘合到至少一个焊盘（10,110）上来将器件管芯（10,110）固定到安装座（12,112） （12,112）的底部（26,28,126）。 在倒装芯片接合之后，器件管芯（10,110）的生长衬底（16,116）的厚度减小。

    Flip chip light emitting diode devices having thinned or removed substrates
    2.
    发明授权
    Flip chip light emitting diode devices having thinned or removed substrates 有权
    倒装芯片发光二极管器件具有减薄或移除的衬底

    公开(公告)号：US07456035B2

    公开(公告)日：2008-11-25

    申请号：US10899864

    申请日：2004-07-27

    申请人： Ivan Eliashevich ,  Boris Kolodin ,  Emil P. Stefanov

    发明人： Ivan Eliashevich ,  Boris Kolodin ,  Emil P. Stefanov

    IPC分类号： H01L21/00

    CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.

    摘要翻译： 在制造倒装芯片发光二极管器件的方法中，外延层（14,114）沉积在生长衬底（16,116）上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件管芯（10,110）。 器件管芯（10,110）被倒装芯片结合到安装件（12,112）上。 倒装芯片接合包括通过将器件管芯（10,110）的至少一个电极（20,22，120）粘合到至少一个焊盘（10,110）上来将器件管芯（10,110）固定到安装座（12,112） （12,112）的底部（26,28,126）。 在倒装芯片接合之后，器件管芯（10,110）的生长衬底（16,116）的厚度减小。

    Super bright LED power package
    3.
    发明申请
    Super bright LED power package 审中-公开
    超亮LED电源包

    公开(公告)号：US20070236956A1

    公开(公告)日：2007-10-11

    申请号：US11394895

    申请日：2006-03-31

    申请人： Boris Kolodin ,  Shawn Du ,  Emil Radkov ,  Mark Mayer ,  Ivan Eliashevich

    发明人： Boris Kolodin ,  Shawn Du ,  Emil Radkov ,  Mark Mayer ,  Ivan Eliashevich

    IPC分类号： G02B6/00 ,  F21V9/00

    CPC分类号： G02B6/0008 ,  F21S41/00 ,  F21Y2115/10 ,  G02B3/00 ,  G02B6/04

    摘要： At least two light emitting diodes emit a non-parallel light beam. A condensing system, operationally coupled with the light emitting diodes, receives the emitted non-parallel light beam and converts the received non-parallel light beam into a parallel light beam. A non-imaging concentrator includes an input surface which collects the parallel light beam, and an output surface, which includes phosphor material and outputs light.

    摘要翻译： 至少两个发光二极管发射非平行光束。 与发光二极管可操作地耦合的冷凝系统接收所发射的非平行光束并将接收到的非平行光束转换为平行光束。 非成像集中器包括收集平行光束的输入表面和包括磷光体材料并输出光的输出表面。

    Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip
    4.
    发明授权
    Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip 失效
    支持嵌入式导电芯片附件材料，用于倒装芯片接合发光芯片

    公开(公告)号：US07635869B2

    公开(公告)日：2009-12-22

    申请号：US11520905

    申请日：2006-09-14

    申请人： Boris Kolodin ,  Michael Hsing ,  Stanton Earl Weaver, Jr. ,  Ivan Eliashevich ,  Srinath K. Aanegola

    发明人： Boris Kolodin ,  Michael Hsing ,  Stanton Earl Weaver, Jr. ,  Ivan Eliashevich ,  Srinath K. Aanegola

    IPC分类号： H01L33/00

    CPC分类号： H01L33/483 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/00

    摘要： In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10′, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36′) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.

    摘要翻译： 在发光器件中，发光芯片（12,112）包括堆叠的半导体层（14）和设置在半导体层堆叠上的电极（24,141,142）。 支撑件（10,10'，110,210）具有以倒装芯片方式支撑发光芯片的大致平坦的表面（30）。 导电芯片附接材料（40,41,141,142）凹入到支撑件的大致平坦的表面中，使得附接材料基本不突出在支撑体的大致平坦的表面上方。 附着材料提供发光芯片的电极与支撑体的导电路径（36,36'）之间的电连通。 可选地，至少半导体层的叠层和发光芯片的电极也凹入到支撑体的大致平坦的表面中。

    Super thin LED package for the backlighting applications and fabrication method
    6.
    发明申请
    Super thin LED package for the backlighting applications and fabrication method 审中-公开
    超薄LED封装，用于背光应用和制造方法

    公开(公告)号：US20080145960A1

    公开(公告)日：2008-06-19

    申请号：US11639759

    申请日：2006-12-15

    申请人： Boris Kolodin ,  Ivan Eliashevich ,  Chen-Lun Hsing Chen ,  Stanton E. Weaver

    发明人： Boris Kolodin ,  Ivan Eliashevich ,  Chen-Lun Hsing Chen ,  Stanton E. Weaver

    IPC分类号： H01L21/00

    CPC分类号： H01L25/0753 ,  H01L33/54 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： First and second light emitting diode (LED) arrays, which each includes a corresponding number of LED dies, are disposed on a substrate proximately and substantially parallel to one another. Each pair of substantially paralleled LED dies of the first and second arrays is covered by substantially transparent optical encapsulant. The optical encapsulant is one of covered by a reflective layer for a UV to visible spectral region and shaped for total internal light reflection. The substrate is diced along an axis extending in parallel and between the first and second LED arrays.

    摘要翻译： 每个包括相应数量的LED管芯的第一和第二发光二极管（LED）阵列被布置在基板上并且基本上彼此平行。 第一和第二阵列的每对基本上平行的LED管芯被基本上透明的光学密封剂覆盖。 光学密封剂是用于UV到可见光谱区域的反射层覆盖的并且被形成用于完全内部光反射的光学密封剂。 衬底沿着平行延伸并且在第一和第二LED阵列之间的轴线切割。

    Support for flip-chip bonding a light emitting chip
    7.
    发明申请
    Support for flip-chip bonding a light emitting chip 失效
    支持倒装芯片连接发光芯片

    公开(公告)号：US20080067537A1

    公开(公告)日：2008-03-20

    申请号：US11520905

    申请日：2006-09-14

    申请人： Boris Kolodin ,  Michael Hsing ,  Stanton Earl Weaver ,  Ivan Eliashevich ,  Srinath K. Aanegola

    发明人： Boris Kolodin ,  Michael Hsing ,  Stanton Earl Weaver ,  Ivan Eliashevich ,  Srinath K. Aanegola

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/483 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/00

    摘要： In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10′, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36′) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.

    摘要翻译： 在发光器件中，发光芯片（12,112）包括堆叠的半导体层（14）和设置在半导体层堆叠上的电极（24,141,142）。 支撑件（10,10'，110,210）具有以倒装芯片方式支撑发光芯片的大致平坦的表面（30）。 导电芯片附接材料（40,41,141,142）凹入到支撑件的大致平坦的表面中，使得附接材料基本不突出在支撑体的大致平坦的表面上方。 附着材料提供发光芯片的电极与支撑体的导电路径（36,36'）之间的电连通。 可选地，至少半导体层的叠层和发光芯片的电极也凹入到支撑体的大致平坦的表面中。