公开(公告)号：US09472436B2

公开(公告)日：2016-10-18

申请号：US14273369

申请日：2014-05-08

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/20 ,  H01L23/00 ,  B32B38/00 ,  B32B38/10 ,  B32B43/00

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

公开(公告)号：US20140239453A1

公开(公告)日：2014-08-28

申请号：US14273369

申请日：2014-05-08

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/683

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供临时连接半导体衬底的多个结合层方案。 在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。 本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能 正面的缺陷。

公开(公告)号：US20140174627A1

公开(公告)日：2014-06-26

申请号：US14191544

申请日：2014-02-27

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L23/00

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

公开(公告)号：US20150122426A1

公开(公告)日：2015-05-07

申请号：US14550008

申请日：2014-11-21

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/683 ,  B32B38/00 ,  B32B38/10 ,  B32B43/00

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供临时连接半导体衬底的多个结合层方案。 在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。 本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能 正面的缺陷。

公开(公告)号：US10968348B2

公开(公告)日：2021-04-06

申请号：US16229591

申请日：2018-12-21

Applicant: Brewer Science, Inc.

Inventor： Xiao Liu ,  Qi Wu ,  Rama Puligadda ,  Dongshun Bai ,  Baron Huang

IPC: C08L71/12 ,  H01L23/00 ,  H01L23/31 ,  H01L23/528 ,  H01L21/48 ,  C08K3/00 ,  H01L21/683

Abstract: Novel thermoplastic polyhydroxyether-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are soluble in commonly-used organic solvents (e.g., cyclopentanone). The compositions can also be used as build-up layers for RDL formation.

公开(公告)号：US20220127496A1

公开(公告)日：2022-04-28

申请号：US17504272

申请日：2021-10-18

Applicant: Brewer Science, Inc.

Inventor： Rama Puligadda ,  Xiao Liu ,  Luke M. Prenger ,  Xavier Martinez

IPC: C09J5/06 ,  H01L21/683 ,  C08G73/02

Abstract: A method is described for debonding a carrier and device substrate using a high-intensity, pulsed, broadband light system that is suitable for wafer-level packaging applications. The carrier substrate is a transparent wafer with a light absorbing layer on one side of the wafer. This method utilizes the high intensity light to rapidly heat up the light absorbing layer to decompose or melt a bonding material layer that is adjacent to the light absorbing layer. After exposure to light, the carrier substrate can be lifted off the surface of the device wafer with little or no force.

公开(公告)号：US20190194453A1

公开(公告)日：2019-06-27

申请号：US16229591

申请日：2018-12-21

Applicant: Brewer Science, Inc.

Inventor： Xiao Liu ,  Qi Wu ,  Rama Puligadda ,  Dongshun Bai ,  Baron Huang

IPC: C08L71/12 ,  H01L23/00 ,  H01L23/31 ,  H01L23/528

CPC classification number: C08L71/12 ,  C08L2203/20 ,  H01L23/3114 ,  H01L23/528 ,  H01L24/17 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0231 ,  H01L2224/02333 ,  H01L2224/02379

Abstract: Novel thermoplastic polyhydroxyether-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are soluble in commonly-used organic solvents (e.g., cyclopentanone). The compositions can also be used as build-up layers for RDL formation.

公开(公告)号：US09224631B2

公开(公告)日：2015-12-29

申请号：US14191544

申请日：2014-02-27

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/20 ,  H01L23/00 ,  B32B38/00 ,  B32B38/10 ,  B32B43/00

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供临时连接半导体衬底的多个结合层方案。 在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。 本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能 正面的缺陷。