公开(公告)号：US09827740B2

公开(公告)日：2017-11-28

申请号：US14805898

申请日：2015-07-22

Applicant: Brewer Science Inc.

Inventor： Xiao Liu ,  Dongshun Bai ,  Tony D. Flaim ,  Xing-Fu Zhong ,  Qi Wu

IPC: B32B38/10 ,  B32B7/06 ,  B05D3/00 ,  B32B27/06 ,  B32B37/14 ,  C09D179/08 ,  H01L21/683 ,  C08G73/10

CPC classification number: B32B7/06 ,  B05D3/007 ,  B32B27/06 ,  B32B37/14 ,  B32B2255/26 ,  B32B2307/412 ,  B32B2405/00 ,  B32B2457/00 ,  C08G73/1014 ,  C08G73/1039 ,  C08G73/1067 ,  C09D179/08 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1158 ,  Y10T156/1917

Abstract: The invention broadly relates to release layer compositions that enable thin wafer handling during microelectronics manufacturing. Preferred release layers are formed from compositions comprising a polyamic acid or polyimide dissolved or dispersed in a solvent system, followed by curing and/or solvent removal at about 250° C. to about 350° C. for less than about 10 minutes, yielding a thin film. This process forms the release compositions into polyimide release layers that can be used in temporary bonding processes, and laser debonded after the desired processing has been carried out.

公开(公告)号：US20160023436A1

公开(公告)日：2016-01-28

申请号：US14805898

申请日：2015-07-22

Applicant: Brewer Science Inc.

Inventor： Xiao Liu ,  Dongshun Bai ,  Tony D. Flaim ,  Xing-Fu Zhong ,  Qi Wu

IPC: B32B7/06 ,  B32B37/14 ,  B32B27/06 ,  B05D3/00

CPC classification number: B32B7/06 ,  B05D3/007 ,  B32B27/06 ,  B32B37/14 ,  B32B2255/26 ,  B32B2307/412 ,  B32B2405/00 ,  B32B2457/00 ,  C08G73/1014 ,  C08G73/1039 ,  C08G73/1067 ,  C09D179/08 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1158 ,  Y10T156/1917

Abstract: The invention broadly relates to release layer compositions that enable thin wafer handling during microelectronics manufacturing. Preferred release layers are formed from compositions comprising a polyamic acid or polyimide dissolved or dispersed in a solvent system, followed by curing and/or solvent removal at about 250° C. to about 350° C. for less than about 10 minutes, yielding a thin film. This process forms the release compositions into polyimide release layers that can be used in temporary bonding processes, and laser debonded after the desired processing has been carried out.

Abstract translation: 本发明广泛地涉及在微电子制造期间能够实现薄晶片处理的释放层组合物。 优选的剥离层由包含溶解或分散在溶剂体系中的聚酰胺酸或聚酰亚胺的组合物形成，随后在约250℃至约350℃下固化和/或除去溶剂少于约10分钟， 薄膜。 该方法将释放组合物形成为可用于临时粘合工艺的聚酰亚胺剥离层，并且在所需的加工已经进行之后激光剥离。

公开(公告)号：US09224631B2

公开(公告)日：2015-12-29

申请号：US14191544

申请日：2014-02-27

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/20 ,  H01L23/00 ,  B32B38/00 ,  B32B38/10 ,  B32B43/00

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供临时连接半导体衬底的多个结合层方案。 在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。 本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能 正面的缺陷。

公开(公告)号：US09117757B2

公开(公告)日：2015-08-25

申请号：US14055691

申请日：2013-10-16

Applicant: Brewer Science Inc.

Inventor： Jyoti K. Malhotra ,  Xing-Fu Zhong

IPC: H01L23/29 ,  H01L21/56 ,  C08K5/11 ,  H01L33/56 ,  C08L83/04

CPC classification number: H01L23/296 ,  C08G77/12 ,  C08G77/20 ,  C08K5/11 ,  C08K5/56 ,  C08L83/00 ,  C08L83/04 ,  H01L21/56 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Novel compositions and methods of using those compositions to form high refractive index coatings are provided. The compositions comprise a mixture of two silicone polymers, a catalyst, and an inhibitor for the catalyst. The preferred catalyst comprises platinum. Unlike prior art silicone systems, the inventive composition can be provided in a one-part form due to a substantially improved pot life. The compositions can be spin- or spray-applied, followed by baking to crosslink the polymers and form a cured layer. The inventive cured layers have high refractive indices and light transmissions.

Abstract translation: 提供了使用这些组合物形成高折射率涂层的新型组合物和方法。 组合物包含两种硅氧烷聚合物，催化剂和用于催化剂的抑制剂的混合物。 优选的催化剂包括铂。 与现有技术的有机硅系统不同，由于适用期大大提高，本发明组合物可以以一部分形式提供。 可以旋涂或喷涂组合物，然后烘烤以交联聚合物并形成固化层。 本发明的固化层具有高折射率和光透射。

公开(公告)号：US20140103546A1

公开(公告)日：2014-04-17

申请号：US14055691

申请日：2013-10-16

Applicant: Brewer Science Inc.

Inventor： Jyoti K. Malhotra ,  Xing-Fu Zhong

IPC: H01L23/29 ,  H01L33/56 ,  H01L21/56

CPC classification number: H01L23/296 ,  C08G77/12 ,  C08G77/20 ,  C08K5/11 ,  C08K5/56 ,  C08L83/00 ,  C08L83/04 ,  H01L21/56 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Novel compositions and methods of using those compositions to form high refractive index coatings are provided. The compositions comprise a mixture of two silicone polymers, a catalyst, and an inhibitor for the catalyst. The preferred catalyst comprises platinum. Unlike prior art silicone systems, the inventive composition can be provided in a one-part form due to a substantially improved pot life. The compositions can be spin- or spray-applied, followed by baking to crosslink the polymers and form a cured layer. The inventive cured layers have high refractive indices and light transmissions.

Abstract translation: 提供了使用这些组合物形成高折射率涂层的新型组合物和方法。 组合物包含两种硅氧烷聚合物，催化剂和用于催化剂的抑制剂的混合物。 优选的催化剂包括铂。 与现有技术的有机硅系统不同，由于适用期大大提高，本发明组合物可以以一部分形式提供。 可以旋涂或喷涂组合物，然后烘烤以交联聚合物并形成固化层。 本发明的固化层具有高折射率和光透射。

公开(公告)号：US10854451B2

公开(公告)日：2020-12-01

申请号：US15188620

申请日：2016-06-21

Applicant: Brewer Science Inc.

Inventor： Xing-Fu Zhong ,  Runhui Huang ,  Boyu Zhang

IPC: H01L21/033 ,  H01L21/02 ,  C09D125/08 ,  C09D131/02 ,  C09D179/08

Abstract: Planarizing and spin-on-carbon (SOC) compositions that fill vias and/or trenches on a substrate while planarizing the surface in a single thin layer coating process are provided. The compositions can planarize wide ranges of substrates with vias or trenches of from about 20 nm to about 220 nm wide, and up to about 700 nm deep. These extraordinary properties come from the low molecular weight of the polymers used in the materials, thermally-labile protecting groups on the polymers, and a delayed crosslinking reaction.

公开(公告)号：US20160372326A1

公开(公告)日：2016-12-22

申请号：US15188620

申请日：2016-06-21

Applicant: Brewer Science Inc.

Inventor： Xing-Fu Zhong ,  Runhui Huang ,  Boyu Zhang

IPC: H01L21/033 ,  C09D179/08 ,  C09D131/02

CPC classification number: H01L21/0337 ,  C09D125/08 ,  C09D131/02 ,  C09D179/08 ,  H01L21/02118 ,  H01L21/02282

Abstract: Planarizing and spin-on-carbon (SOC) compositions that fill vias and/or trenches on a substrate while planarizing the surface in a single thin layer coating process are provided. The compositions can planarize wide ranges of substrates with vias or trenches of from about 20 nm to about 220 nm wide, and up to about 700 nm deep. These extraordinary properties come from the low molecular weight of the polymers used in the materials, thermally-labile protecting groups on the polymers, and a delayed crosslinking reaction.

Abstract translation: 提供了在单个薄层涂覆工艺中平坦化表面的同时在基板上填充过孔和/或沟槽的平面化和旋涂碳（SOC）组合物。 组合物可以通过具有约20nm至约220nm宽和高达约700nm深的通孔或沟槽来平坦化宽范围的衬底。 这些非凡的性质来自材料中使用的聚合物的低分子量，聚合物上的热不稳定保护基团和延迟的交联反应。

公开(公告)号：US09472436B2

公开(公告)日：2016-10-18

申请号：US14273369

申请日：2014-05-08

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/20 ,  H01L23/00 ,  B32B38/00 ,  B32B38/10 ,  B32B43/00

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

公开(公告)号：US20140239453A1

公开(公告)日：2014-08-28

申请号：US14273369

申请日：2014-05-08

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/683

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供临时连接半导体衬底的多个结合层方案。 在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。 本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能 正面的缺陷。

公开(公告)号：US20140174627A1

公开(公告)日：2014-06-26

申请号：US14191544

申请日：2014-02-27

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L23/00

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.