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    Laser optics protective device
    1.
    发明授权
    Laser optics protective device 失效
    激光光学保护装置

    公开(公告)号：US5568496A

    公开(公告)日：1996-10-22

    申请号：US351070

    申请日：1994-11-30

    申请人： Brian L. Justus ,  Alan L. Huston ,  Anthony J. Campillo ,  Charles D. Merritt

    发明人： Brian L. Justus ,  Alan L. Huston ,  Anthony J. Campillo ,  Charles D. Merritt

    IPC分类号： H01S3/23 ,  H01S3/10

    CPC分类号： H01S3/2308 ,  H01S3/0064 ,  Y10S372/703

    摘要： A broadband thermal optical limiter disposed between a laser oscillator and laser amplifier system for protecting optical components in the laser oscillator from damage due to amplified optical feedback from the laser amplifier system at all near ultraviolet, visible and near infrared wavelengths is disclosed. The thermal optical limiter comprises: a first lens for focusing the amplified optical feedback to a focal point on an optical axis; a flowing dye cell disposed near the focal point and being responsive to the focused amplified optical feedback for thermally defocusing and aberrating the focused amplified optical feedback into a plurality of rings about the optical axis; a second lens for passing only a small portion of the defocused amplified optical feedback; and a blocking aperture disposed around the second lens for blocking substantially all of the thermally defocused amplified optical feedback from the flowing dye cell and passing therethrough into the second lens only a small portion of the thermally defocused amplified optical feedback from the flowing dye cell.

    摘要翻译： 公开了一种布置在激光振荡器和激光放大器系统之间的宽带热光学限制器，用于保护激光振荡器中的光学部件免受来自激光放大器系统在所有近紫外，可见光和近红外波长处的光反馈的损害。 热光学限制器包括：用于将放大的光学反馈聚焦到光轴上的焦点的第一透镜; 流动的染料单元，设置在焦点附近并且响应于聚焦放大的光学反馈，用于热聚焦并使聚焦的放大的光学反馈异像到围绕光轴的多个环中; 用于仅通过散焦放大光学反馈的一小部分的第二透镜; 以及设置在第二透镜周围的阻挡孔，用于阻挡来自流动的染料单元的基本上所有的热散焦的放大的光学反馈，并将其从第二透镜中流出，只有来自流动的染料单元的热散焦放大的光学反馈的一小部分。

    Interband Cascade Lasers with Engineered Carrier Densities
    2.
    发明申请
    Interband Cascade Lasers with Engineered Carrier Densities 有权
    带有工程载波密度的带间级联激光器

    公开(公告)号：US20120269221A1

    公开(公告)日：2012-10-25

    申请号：US13422309

    申请日：2012-03-16

    申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  ChulSoo Kim ,  Mijin Kim ,  Charles D. Merritt

    发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  ChulSoo Kim ,  Mijin Kim ,  Charles D. Merritt

    IPC分类号： H01S5/34

    CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3422 ,  H01S5/34313

    摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.

    摘要翻译： 提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值 电流密度Jth需要实现激光。 对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。 在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

    Interband cascade lasers with engineered carrier densities
    5.
    发明授权
    Interband cascade lasers with engineered carrier densities 有权
    具有工程载波密度的带间级联激光器

    公开(公告)号：US08798111B2

    公开(公告)日：2014-08-05

    申请号：US13422309

    申请日：2012-03-16

    申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  ChulSoo Kim ,  Mijin Kim ,  Charles D. Merritt

    发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  ChulSoo Kim ,  Mijin Kim ,  Charles D. Merritt

    IPC分类号： H01S5/34 ,  H01S5/30

    CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3422 ,  H01S5/34313

    摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.

    摘要翻译： 提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值 电流密度Jth需要实现激光。 对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。 在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。