利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

73 条记录 (耗时 0.032 秒)

    FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT ON COILED FLEXIBLE SUBSTRATES
    2.
    发明申请
    FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT ON COILED FLEXIBLE SUBSTRATES 审中-公开
    使用原子层沉积和缠绕柔性基板上的高通量表面处理形成CIGS吸收层材料

    公开(公告)号：US20110189815A1

    公开(公告)日：2011-08-04

    申请号：US12978801

    申请日：2010-12-27

    申请人： Brian M. Sager ,  Martin R. Roscheisen ,  Craig Leidholm

    发明人： Brian M. Sager ,  Martin R. Roscheisen ,  Craig Leidholm

    IPC分类号： H01L31/0272

    CPC分类号： C23C16/45544 ,  C23C16/405 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/545 ,  C25D7/0614 ,  C25D17/02 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1864 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

    摘要： An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.

    摘要翻译： 可以使用原子层沉积反应在衬底上形成吸收层。 包含IB，IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成，以形成 一个电影。 然后将VIA族元素并入膜中并退火以形成吸收层。 吸收层可以大于约25nm厚。 衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。 卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。 可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。

    Nanostructured layer and fabrication methods
    3.
    发明授权
    Nanostructured layer and fabrication methods 失效
    纳米结构层和制造方法

    公开(公告)号：US07645934B1

    公开(公告)日：2010-01-12

    申请号：US10427749

    申请日：2003-04-29

    申请人： Jacqueline Fidanza ,  Brian M. Sager ,  Martin R. Roscheisen ,  Dong Yu ,  Gina J. Gerritzen

    发明人： Jacqueline Fidanza ,  Brian M. Sager ,  Martin R. Roscheisen ,  Dong Yu ,  Gina J. Gerritzen

    IPC分类号： H01L31/00 ,  B29C65/00 ,  B32B3/26

    CPC分类号： H01L31/036 ,  H01L31/0203 ,  H01L31/04 ,  H01L31/048 ,  H01L31/0481 ,  Y02E10/50 ,  Y10T428/249953

    摘要： Nanostructured layers with 10 nm to 50 nm pores spaced 10-50 nm apart, a method for making such nanostructured layers, optoelectronic devices having such nanostructured layers and uses for such nanostructured layers are disclosed. The nanostructured layer can be formed using precursor sol, which generally includes one or more covalent metal complexes, one or more surfactants, a solvent, one or more optional condensation inhibitors, and (optionally) water. Evaporating the solvent from the precursor sol forms a surfactant-templated film. Covalently crosslinking the surfactant-templated film forms a nanostructured porous layer. Pore size is controlled, e.g., by appropriate solvent concentration, choice of surfactant, use of chelating agents, use of swelling agents or combinations of these.

    摘要翻译： 公开了具有间隔10-50nm的10nm至50nm孔的纳米结构层，制造这种纳米结构层的方法，具有这种纳米结构层的光电子器件以及用于这种纳米结构层的纳米结构层。 纳米结构层可以使用通常包括一种或多种共价金属络合物，一种或多种表面活性剂，溶剂，一种或多种任选的缩合抑制剂和（任选的）水的前体溶胶形成。 从前体溶胶蒸发溶剂形成表面活性剂模板的膜。 共价交联表面活性剂模板的膜形成纳米结构多孔层。 例如通过适当的溶剂浓度，选择表面活性剂，使用螯合剂，使用溶胀剂或这些的组合来控制孔径。

    Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment
    5.
    发明申请
    Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment 审中-公开
    使用原子层沉积和高通量表面处理形成CIGS吸收层材料

    公开(公告)号：US20080305269A1

    公开(公告)日：2008-12-11

    申请号：US12044899

    申请日：2008-03-07

    申请人： Brian M. Sager ,  Martin R. Roscheisen ,  Craig Leidholm

    发明人： Brian M. Sager ,  Martin R. Roscheisen ,  Craig Leidholm

    IPC分类号： B05D3/02

    CPC分类号： C23C16/45544 ,  C23C16/405 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/545 ,  C25D7/0614 ,  C25D17/02 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1864 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

    摘要： An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.

    摘要翻译： 可以使用原子层沉积反应在衬底上形成吸收层。 包含IB，IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成，以形成 一个电影。 然后将VIA族元素并入膜中并退火以形成吸收层。 吸收层可以大于约25nm厚。 衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。 卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。 可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。

    Polycrystalline optoelectronic devices based on templating technique
    7.
    发明授权
    Polycrystalline optoelectronic devices based on templating technique 有权
    基于模板技术的多晶光电器件

    公开(公告)号：US07227066B1

    公开(公告)日：2007-06-05

    申请号：US10829928

    申请日：2004-04-21

    申请人： Martin R. Roscheisen ,  Brian M. Sager

    发明人： Martin R. Roscheisen ,  Brian M. Sager

    IPC分类号： C30B23/00 ,  H01L31/00 ,  H01L29/08 ,  H01L21/00

    CPC分类号： H01L31/0368 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/06 ,  H01L31/1824 ,  Y02E10/541 ,  Y02E10/545 ,  Y02P70/521 ,  Y10S977/742 ,  Y10S977/948

    摘要： Methods for passivating crystalline grains in an active layer for an optoelectronic device and optoelectronic devices having active layers with passivated crystalline grains are disclosed. Crystalline grains of an active layer material and/or window layer material are formed within the nanotubes of an insulating nanotube template. The dimensions of the nanotubes correspond to the dimensions of a crystalline grain formed by the deposition technique used to form the grains. A majority of the surface area of these grains is in contact with the wall of the nanotube template rather than with other grains.

    摘要翻译： 公开了用于光电子器件的有源层钝化晶粒的方法和具有钝化晶粒的有源层的光电器件。 在绝缘纳米管模板的纳米管内形成有源层材料和/或窗层材料的晶粒。 纳米管的尺寸对应于通过用于形成晶粒的沉积技术形成的晶粒的尺寸。 这些颗粒的大部分表面积与纳米管模板的壁接触而不是与其它颗粒接触。

    Solution-based fabrication of photovoltaic cell
    8.
    发明授权
    Solution-based fabrication of photovoltaic cell 失效
    光伏电池基于解决方案的制造

    公开(公告)号：US07663057B2

    公开(公告)日：2010-02-16

    申请号：US10782017

    申请日：2004-02-19

    申请人： Dong Yu ,  Jacqueline Fidanza ,  Martin R. Roscheisen ,  Brian M. Sager

    发明人： Dong Yu ,  Jacqueline Fidanza ,  Martin R. Roscheisen ,  Brian M. Sager

    IPC分类号： H01L31/00 ,  B05D7/00 ,  B05D3/02 ,  C09D1/00

    CPC分类号： H01L31/06 ,  B82Y5/00 ,  B82Y10/00 ,  B82Y30/00 ,  C23C18/1204 ,  C23C18/1266 ,  C23C18/1295 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

    摘要翻译： 公开了一种用于形成CIGS光伏电池有源层的墨水以及用于制造墨水的方法，制备活性层的方法和由活性层制成的太阳能电池。 油墨含有IB，IIIA和（任选地）VIA组分的纳米颗粒的混合物。 颗粒的直径在约1nm至约500nm之间的所需粒度范围，其中大部分颗粒的质量包括尺寸不超过平均粒度的约40％或以下的颗粒，或 如果平均粒度小于约5纳米，高于或低于平均粒度的不超过约2纳米。 使用这种墨水避免了在构建光伏电池期间将材料暴露于H 2 Se气体的需要，并且允许在膜退火期间更均匀的熔融，更均匀的纳米颗粒的混合，并且允许形成更高质量的吸收膜。