THERMOCOUPLE
    1.
    发明申请
    THERMOCOUPLE 有权
    热电偶

    公开(公告)号:US20100145547A1

    公开(公告)日:2010-06-10

    申请号:US12330096

    申请日:2008-12-08

    IPC分类号: G05D23/00 G01K7/02

    CPC分类号: G01K7/04 C23C16/46 G01K13/00

    摘要: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    摘要翻译: 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件,第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    Thermocouple
    2.
    发明授权
    Thermocouple 有权
    热电偶

    公开(公告)号:US08262287B2

    公开(公告)日:2012-09-11

    申请号:US12330096

    申请日:2008-12-08

    IPC分类号: G05D23/00 G01K7/02

    CPC分类号: G01K7/04 C23C16/46 G01K13/00

    摘要: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    摘要翻译: 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件,第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    THERMOCOUPLE
    3.
    发明申请
    THERMOCOUPLE 有权
    热电偶

    公开(公告)号:US20120310440A1

    公开(公告)日:2012-12-06

    申请号:US13563274

    申请日:2012-07-31

    IPC分类号: G05D23/22 G01K7/02

    CPC分类号: G01K7/04 C23C16/46 G01K13/00

    摘要: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    摘要翻译: 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件,第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    Thermocouple
    4.
    发明授权
    Thermocouple 有权
    热电偶

    公开(公告)号:US08616765B2

    公开(公告)日:2013-12-31

    申请号:US13563274

    申请日:2012-07-31

    IPC分类号: G05D23/00 G01K7/02

    CPC分类号: G01K7/04 C23C16/46 G01K13/00

    摘要: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    摘要翻译: 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件,第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    Substrate support system for reduced autodoping and backside deposition
    6.
    发明申请
    Substrate support system for reduced autodoping and backside deposition 有权
    用于减少自动掺杂和背面沉积的基板支撑系统

    公开(公告)号:US20050193952A1

    公开(公告)日:2005-09-08

    申请号:US11057111

    申请日:2005-02-11

    摘要: A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.

    摘要翻译: 衬底支撑系统包括相对薄的圆形衬底保持器,其具有在其顶表面和底表面之间延伸的多个通道。 衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片,其构造成支撑衬底背面的周边部分,使得在衬底和衬底保持器之间形成薄的间隙。 当基板保持器旋转时,叶片可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件为衬底保持器的下侧提供支撑。 中空支撑构件被构造成将气体(例如,惰性气体或清洁气体)向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据本发明的实施例,间隙中的气体然后可以(1)围绕衬底边缘向外和向上流动,或者(2)向下通过衬底保持器的通道(如果有的话),其不会引导回到空心 支持会员 在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。 通过通道向下流动的气体不会返回到支撑构件,有利地通过从扩散的掺杂​​剂原子远离衬底正面来扫除自发掺杂。 在一个实施例中,支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。 在另一个实施例中,支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。 在另一个实施例中,支撑构件包括碗形或杯状结构,其将气体向上输送到除了一个或多个通道中的所有通道中。

    Redundant temperature sensor for semiconductor processing chambers
    9.
    发明授权
    Redundant temperature sensor for semiconductor processing chambers 有权
    用于半导体处理室的冗余温度传感器

    公开(公告)号:US07993057B2

    公开(公告)日:2011-08-09

    申请号:US11961671

    申请日:2007-12-20

    IPC分类号: G01K7/00

    摘要: Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple comprising a first junction and a second junction positioned to measure temperature at substantially the same portion of a substrate. A controller may detect failures in the first junction, the second junction, a first wire pair extending from the first junction, or a second wire pair extending from the second junction. The controller desirably responds to a detected failure of the first junction or first wire pair by selecting the second junction and second wire pair. Conversely, the controller desirably responds to a detected failure of the second junction or second wire pair by selecting the first junction and first wire pair. Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.

    摘要翻译: 提供用于测量半导体处理室中的温度的系统。 实施例提供了一种多结热电偶,其包括第一接头和第二接头,其定位成测量基板的基本相同部分处的温度。 控制器可以检测第一连接点,第二接头,从第一接头延伸的第一线对或从第二接头延伸的第二线对的故障。 控制器期望地通过选择第二连接点和第二线对来响应检测到的第一结或第一线对的故障。 相反,控制器期望地通过选择第一连接点和第一线对来响应检测到的第二连接点或第二线对的故障。 尽管本文教导的系统可能允许精确和基本上不间断的温度测量,尽管热电偶中的接头或线对失效。

    REDUNDANT TEMPERATURE SENSOR FOR SEMICONDUCTOR PROCESSING CHAMBERS
    10.
    发明申请
    REDUNDANT TEMPERATURE SENSOR FOR SEMICONDUCTOR PROCESSING CHAMBERS 有权
    用于半导体处理器的冗余温度传感器

    公开(公告)号:US20090159000A1

    公开(公告)日:2009-06-25

    申请号:US11961671

    申请日:2007-12-20

    IPC分类号: B05C11/00 G01K7/02

    摘要: Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple comprising a first junction and a second junction positioned to measure temperature at substantially the same portion of a substrate. A controller may detect failures in the first junction, the second junction, a first wire pair extending from the first junction, or a second wire pair extending from the second junction. The controller desirably responds to a detected failure of the first junction or first wire pair by selecting the second junction and second wire pair. Conversely, the controller desirably responds to a detected failure of the second junction or second wire pair by selecting the first junction and first wire pair. Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.

    摘要翻译: 提供用于测量半导体处理室中的温度的系统。 实施例提供了一种多结热电偶,其包括第一接头和第二接头,其定位成测量基板的基本相同部分处的温度。 控制器可以检测第一连接点,第二接头,从第一接头延伸的第一线对或从第二接头延伸的第二线对的故障。 控制器期望地通过选择第二连接点和第二线对来响应检测到的第一结或第一线对的故障。 相反,控制器期望地通过选择第一连接点和第一线对来响应检测到的第二连接点或第二线对的故障。 尽管本文教导的系统可能允许精确和基本上不间断的温度测量,尽管热电偶中的接头或线对失效。