-
1.发明授权公开(公告)号：US07432755B1
公开(公告)日：2008-10-07
申请号：US11949426
申请日：2007-12-03
申请人： Byeongju Park , Deok-kee Kim , John Matthew Safran , Yongsang Cho
发明人： Byeongju Park , Deok-kee Kim , John Matthew Safran , Yongsang Cho
CPC分类号： G11C17/18
摘要： An electrical fuse programming circuit and a method for programming an electrical fuse within the electrical fuse programming circuit use a programming circuit bus to which are electrically connected in parallel the electrical fuse and a bypass resistor. A current within the programming circuit bus is made to flow through the bypass resistor for a period of time sufficient to stabilize the current, and then sequentially and instantaneously switched to program the electrical fuse.
摘要翻译： 电熔丝编程电路和用于编程电熔丝编程电路内的电熔丝的方法使用编程电路总线并联电连接到熔丝和旁路电阻器。 使编程电路总线内的电流流过旁路电阻一段足以稳定电流的时间，然后顺序并瞬时切换以编程电熔丝。
-
公开(公告)号：US07714326B2
公开(公告)日：2010-05-11
申请号：US11683075
申请日：2007-03-07
CPC分类号： H01L27/112 , H01L23/5252 , H01L27/101 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The present invention provides structures for antifuses that utilize electromigration for programming. By providing a portion of antifuse link with high resistance without conducting material and then by inducing electromigration of the conducting material into the antifuse link, the resistance of the antifuse structure is changed. By providing a terminal on the antifuse link, the change in the electrical properties of the antifuse link is detected and sensed. Also disclosed are an integrated antifuse with a built-in sensing device and a two dimensional array of integrated antifuses that can share programming transistors and sensing circuitry.
摘要翻译： 本发明提供了利用电迁移进行编程的反熔丝的结构。 通过在没有导电材料的情况下提供具有高电阻的一部分反熔丝连接，然后通过将导电材料电迁移到反熔丝连接中，反熔丝结构的电阻改变。 通过在反熔丝链路上设置端子，检测和感测反熔丝连接的电特性的变化。 还公开了具有内置感测装置的集成反熔丝和可共享编程晶体管和感测电路的集成反熔丝的二维阵列。
-
公开(公告)号：US07723820B2
公开(公告)日：2010-05-25
申请号：US11616965
申请日：2006-12-28
申请人： Deok-kee Kim , Byeongju Park , John M. Safran
发明人： Deok-kee Kim , Byeongju Park , John M. Safran
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , G11C17/16 , G11C17/18 , H01L27/105 , H01L27/112 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides structures for an integrated antifuse that incorporates an integrated sensing transistor with an integrated heater. Two terminals connected to the upper plate allow the heating of the upper plate, accelerating the breakdown of the antifuse dielectric at a lower bias voltage. Part of the upper plate also serves as the gate of the integrated sensing transistor. The antifuse dielectric serves as the gate dielectric of the integrated transistor. The lower plate comprises a channel, a drain, and a source of a transistor. While intact, the integrated sensing transistor allows a passage of transistor current through the drain. When programmed, the antifuse dielectric, which is the gate of the integrated transistor, is subjected to a gate breakdown, shorting the gate to the channel and resulting in a decreased drain current. The integrated antifuse structure can also be wired in an array to provide a compact OTP memory array.
摘要翻译： 本发明提供了一种集成反熔丝的结构，该结构集成了具有集成加热器的集成感测晶体管。 连接到上板的两个端子允许上板的加热，加速在更低偏压下的反熔丝电介质的击穿。 上板的一部分也用作集成感测晶体管的栅极。 反熔丝电介质用作集成晶体管的栅极电介质。 下板包括晶体管的沟道，漏极和源极。 虽然完整，集成感测晶体管允许晶体管电流通过漏极。 当编程时，作为集成晶体管的栅极的反熔丝电介质受到栅极击穿，使栅极短路到沟道并导致漏极电流降低。 集成的反熔丝结构也可以以阵列布线，以提供紧凑的OTP存储器阵列。
-
公开(公告)号：US20080157270A1
公开(公告)日：2008-07-03
申请号：US11618757
申请日：2006-12-30
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/00
摘要： The embodiments of the invention generally relate to fuse and anti-fuse structures and include a copper conductor positioned within a substrate and a metal cap on the first conductor. A low-k dielectric is on the substrate and the metal cap. A tantalum nitride resistor is on the dielectric, and the resistor is positioned above the metal cap such that an antifuse element region of the dielectric is positioned between the resistor and the metal cap. The antifuse element region of the dielectric is adapted to change resistance values by application of a voltage difference between the resistor and the copper conductor/metal cap. The antifuse element region has a first higher resistance (more closely matching an insulator) before application of the voltage and a second lower resistance (more closely matching a conductor) after application of such voltage. In one embodiment herein the voltage can be supplemented by heating through application of voltage through the first conductor which helps change the resistance of the antifuse element region.
摘要翻译： 本发明的实施例一般涉及熔丝和反熔丝结构，并且包括定位在基板内的铜导体和第一导体上的金属盖。 低k电介质位于基板和金属盖上。 电介质上的氮化钽电阻器，电阻器位于金属帽的上方，使得电介质的反熔丝元件区域位于电阻器和金属帽之间。 电介质的反熔丝元件区域适于通过施加电阻器和铜导体/金属帽之间的电压差来改变电阻值。 在施加电压之后，反熔丝元件区域具有第一高电阻（更紧密地匹配绝缘体）和施加电压之后的第二较低电阻（更接近地匹配导体）。 在本文的一个实施例中，可以通过施加通过第一导体的电压进行加热来补充电压，这有助于改变反熔丝元件区域的电阻。
-
公开(公告)号：US20080217658A1
公开(公告)日：2008-09-11
申请号：US11683075
申请日：2007-03-07
CPC分类号： H01L27/112 , H01L23/5252 , H01L27/101 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The present invention provides structures for antifuses that utilize electromigration for programming. By providing a portion of antifuse link with high resistance without conducting material and then by inducing electromigration of the conducting material into the antifuse link, the resistance of the antifuse structure is changed. By providing a terminal on the antifuse link, the change in the electrical properties of the antifuse link is detected and sensed. Also disclosed are an integrated antifuse with a built-in sensing device and a two dimensional array of integrated antifuses that can share programming transistors and sensing circuitry.
摘要翻译： 本发明提供了利用电迁移进行编程的反熔丝的结构。 通过在没有导电材料的情况下提供具有高电阻的一部分反熔丝连接，然后通过将导电材料电迁移到反熔丝连接中，反熔丝结构的电阻改变。 通过在反熔丝链路上设置端子，检测和感测反熔丝连接的电特性的变化。 还公开了具有内置感测装置的集成反熔丝和可共享编程晶体管和感测电路的集成反熔丝的二维阵列。
-
6.发明授权Programmable fuse/non-volatile memory structures using externally heated phase change material 有权使用外部加热相变材料的可编程保险丝/非易失性存储器结构公开(公告)号：US07411818B1
公开(公告)日：2008-08-12
申请号：US11672110
申请日：2007-02-07
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
IPC分类号： G11C11/00
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为 接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。
-
7.发明申请FUSE STRUCTURE INCLUDING MONOCRYSTALLINE SEMICONDUCTOR MATERIAL LAYER AND GAP 有权保险丝结构，包括单晶半导体材料层和GAP公开(公告)号：US20090096059A1
公开(公告)日：2009-04-16
申请号：US11870007
申请日：2007-10-10
CPC分类号： H01L23/5256 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： A fuse structure, a method for fabricating the fuse structure and a method for programming a fuse within the fuse structure each use a fuse material layer that is used as a fuse, and located upon a monocrystalline semiconductor material layer in turn located over a substrate. At least part of the monocrystalline semiconductor material layer is separated from the substrate by a gap. Use of the monocrystalline semiconductor material layer, as well as the gap, provides for enhanced uniformity and reproducibility when programming the fuse.
摘要翻译： 熔丝结构，制造熔丝结构的方法和用于对熔丝结构内的熔丝进行编程的方法各自使用用作熔丝的熔丝材料层，并且依次位于单晶半导体材料层上而位于衬底上。 至少部分单晶半导体材料层通过间隙与衬底分离。 单晶半导体材料层的使用以及间隙，在编程保险丝时提供了增强的均匀性和再现性。
-
8.发明申请公开(公告)号：US20080186760A1
公开(公告)日：2008-08-07
申请号：US11672110
申请日：2007-02-07
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
-
公开(公告)号：US20080157268A1
公开(公告)日：2008-07-03
申请号：US11618749
申请日：2006-12-30
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A programmable structure such as a write once read many (WORM) or one time programmable read only memories (OTPROM) is disclosed herein. The structure includes a first conductor (such as copper) positioned within a substrate and a metal cap on the first conductor. A low-k dielectric is on the substrate and the metal cap. A tantalum nitride resistor is on the dielectric, and the resistor is positioned above the metal cap such that a programmable region of the dielectric is positioned between the resistor and the metal cap. The first conductor (including the metal cap), the programmable region of the dielectric, and the resistor form a metal-insulator-metal capacitor. Further, the programmable region of the dielectric is adapted to be permanently changed from heat produced by the resistor when a voltage difference is applied to the first and second ends of the resistor, respectively, through the first and second contacts. Thus, the capacitor comprises a first capacitance before the programmable region is permanently changed by the heat from the resistor and comprises a second capacitance after the programmable region is permanently changed by the heat from the resistor.
摘要翻译： 这里公开了诸如一次写入一次读取（WORM）或一次可编程只读存储器（OTPROM）的可编程结构。 该结构包括位于基板内的第一导体（例如铜）和第一导体上的金属盖。 低k电介质位于基板和金属盖上。 电介质上有一个氮化钽电阻器，电阻器位于金属帽的上方，使电介质的可编程区域位于电阻器和金属帽之间。 第一导体（包括金属盖），电介质的可编程区域和电阻器形成金属 - 绝缘体 - 金属电容器。 此外，电介质的可编程区域分别适用于当通过第一和第二触点将电压差分别施加到电阻器的第一和第二端时由电阻器产生的热量永久地改变。 因此，电容器包括在可编程区域被来自电阻器的热量永久地变化之前的第一电容，并且在可编程区域被来自电阻器的热量永久地改变之后包括第二电容。
-
公开(公告)号：US20080157125A1
公开(公告)日：2008-07-03
申请号：US11616965
申请日：2006-12-28
申请人： Deok-kee Kim , Byeongju Park , John M. Safran
发明人： Deok-kee Kim , Byeongju Park , John M. Safran
IPC分类号： H01L27/105 , H01L29/423
CPC分类号： H01L23/5252 , G11C17/16 , G11C17/18 , H01L27/105 , H01L27/112 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides structures for an integrated antifuse that incorporates an integrated sensing transistor with an integrated heater. Two terminals connected to the upper plate allow the heating of the upper plate, accelerating the breakdown of the antifuse dielectric at a lower bias voltage. Part of the upper plate also serves as the gate of the integrated sensing transistor. The antifuse dielectric serves as the gate dielectric of the integrated transistor. The lower plate comprises a channel, a drain, and a source of a transistor. While intact, the integrated sensing transistor allows a passage of transistor current through the drain. When programmed, the antifuse dielectric, which is the gate of the integrated transistor, is subjected to a gate breakdown, shorting the gate to the channel and resulting in a decreased drain current. The integrated antifuse structure can also be wired in an array to provide a compact OTP memory array.
摘要翻译： 本发明提供了一种集成反熔丝的结构，该结构集成了具有集成加热器的集成感测晶体管。 连接到上板的两个端子允许上板的加热，加速在更低偏压下的反熔丝电介质的击穿。 上板的一部分也用作集成感测晶体管的栅极。 反熔丝电介质用作集成晶体管的栅极电介质。 下板包括晶体管的沟道，漏极和源极。 虽然完整，集成感测晶体管允许晶体管电流通过漏极。 当编程时，作为集成晶体管的栅极的反熔丝电介质受到栅极击穿，使栅极短路到沟道并导致漏极电流降低。 集成的反熔丝结构也可以以阵列布线，以提供紧凑的OTP存储器阵列。
-
-
-
-
-
-
-
-
-
搜索结果
95 条记录 (耗时 0.024 秒)
