SUBSTRATE CLEANING METHOD FOR REMOVING OXIDE FILM
    1.
    发明申请
    SUBSTRATE CLEANING METHOD FOR REMOVING OXIDE FILM 审中-公开
    用于去除氧化膜的基板清洁方法

    公开(公告)号:US20160343565A1

    公开(公告)日:2016-11-24

    申请号:US15161892

    申请日:2016-05-23

    Abstract: It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.

    Abstract translation: 已经发现,当通过等离子体形成室(108)与处理室分离的分隔板上形成的多个孔(111)将由等离子体产生的自由基供给到处理室时,将自由基与 单独供给到处理室的处理气体被抑制,自由基的激发能被抑制,从而可以在高Si选择性下进行基板表面处理,这使得可以进行去除自然氧化膜和有机物的表面处理 而不会降低基板表面的平坦度。 通过用于等离子体分离的等离子体约束电极板(110)的自由基通过孔(111)将等离子体中的自由基供给到处理室,将处理气体供给到处理室(121)以与 处理室中的自由基,然后通过自由基和处理气体的混合气氛清洁基板表面。

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