公开(公告)号：US10358579B2

公开(公告)日：2019-07-23

申请号：US14094921

申请日：2013-12-03

申请人： Cabot Microelectronics Corporation

发明人： Ke Zhang ,  Michael White ,  Tsung-Ho Lee ,  Steven Grumbine ,  Hon-Wu Lau

IPC分类号： G09G1/18 ,  C23F3/06 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  C09G1/18

摘要： Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

公开(公告)号：US20150152289A1

公开(公告)日：2015-06-04

申请号：US14094921

申请日：2013-12-03

申请人： Cabot Microelectronics Corporation

发明人： Ke Zhang ,  Michael White ,  Tsung-Ho Lee ,  Steven Grumbine ,  Hon-Wu Lau

IPC分类号： C09G1/02 ,  C23F3/06

CPC分类号： C09G1/02 ,  C09G1/18 ,  C23F3/06 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/3212

摘要： Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

摘要翻译： 描述了用于平面化镍磷（NiP）衬底的化学机械抛光（CMP）组合物和方法。 NiP CMP方法包括用CMP组合物研磨衬底的表面。 CMP组合物包含悬浮在pH小于2的水性载体中的胶体二氧化硅磨料，并且含有包含过氧化氢的初级氧化剂，包含能够在NiP存在下可逆可氧化和还原的金属离子的二次氧化剂 和过氧化氢，螯合剂和甘氨酸。 螯合剂包含能够与二次氧化剂的金属离子螯合的两个或三个羧酸取代基。