公开(公告)号：US20150152289A1

公开(公告)日：2015-06-04

申请号：US14094921

申请日：2013-12-03

申请人： Cabot Microelectronics Corporation

发明人： Ke Zhang ,  Michael White ,  Tsung-Ho Lee ,  Steven Grumbine ,  Hon-Wu Lau

IPC分类号： C09G1/02 ,  C23F3/06

CPC分类号： C09G1/02 ,  C09G1/18 ,  C23F3/06 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/3212

摘要： Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

摘要翻译： 描述了用于平面化镍磷（NiP）衬底的化学机械抛光（CMP）组合物和方法。 NiP CMP方法包括用CMP组合物研磨衬底的表面。 CMP组合物包含悬浮在pH小于2的水性载体中的胶体二氧化硅磨料，并且含有包含过氧化氢的初级氧化剂，包含能够在NiP存在下可逆可氧化和还原的金属离子的二次氧化剂 和过氧化氢，螯合剂和甘氨酸。 螯合剂包含能够与二次氧化剂的金属离子螯合的两个或三个羧酸取代基。

公开(公告)号：US10358579B2

公开(公告)日：2019-07-23

申请号：US14094921

申请日：2013-12-03

申请人： Cabot Microelectronics Corporation

发明人： Ke Zhang ,  Michael White ,  Tsung-Ho Lee ,  Steven Grumbine ,  Hon-Wu Lau

IPC分类号： G09G1/18 ,  C23F3/06 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  C09G1/18

摘要： Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

公开(公告)号：US09481811B2

公开(公告)日：2016-11-01

申请号：US14627081

申请日：2015-02-20

申请人： Cabot Microelectronics Corporation

发明人： Tong Li ,  Hon-Wu Lau ,  Michael White

IPC分类号： C09G1/04 ,  B24B1/00 ,  C09G1/02 ,  B24B37/04 ,  H01L21/321 ,  H01L21/306 ,  C09K3/14 ,  C09K13/06 ,  C09G1/00 ,  C09G1/06

CPC分类号： C09G1/04 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  G11B5/8404 ,  G11B23/505 ,  H01L21/30625 ,  H01L21/3212

摘要： The invention provides a chemical-mechanical polishing composition containing (a) an abrasive selected from wet-process silica, alpha alumina, fumed alumina, ceria, zirconia, titania, and combinations thereof, (b) an oxidation catalyst, (c) a non-transition metal sulfate salt, (d) a complexing agent, (e) hydrogen peroxide, (f) a nonionic surfactant, (g) an anionic surfactant, and (h) water. The polishing composition has a pH of about 1 to about 5, and the polishing composition is substantially free of a peroxydisulfate salt. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

摘要翻译： 本发明提供一种化学机械抛光组合物，其包含（a）选自湿法二氧化硅，α氧化铝，热解氧化铝，二氧化铈，氧化锆，二氧化钛及其组合的研磨剂，（b）氧化催化剂，（c） 过渡金属硫酸盐，（d）络合剂，（e）过氧化氢，（f）非离子表面活性剂，（g）阴离子表面活性剂和（h）水。 抛光组合物的pH为约1至约5，并且抛光组合物基本上不含过氧化二硫酸盐。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底，特别是镍 - 磷基底进行化学机械抛光的方法，相对于基底移动抛光垫和抛光组合物， 并研磨基底的至少一部分以抛光基底。