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公开(公告)号：US09996005B2
公开(公告)日：2018-06-12
申请号：US14082865
申请日：2013-11-18
Applicant: CARL ZEISS SMT GmbH
Inventor： Dirk Heinrich Ehm , Peter Huber , Stephan Muellender , Gisela Von Blanckenhagen
CPC classification number: G03F7/2008 , B82Y10/00 , G02B1/105 , G02B1/14 , G02B5/0816 , G02B5/0891 , G02B19/0095 , G02B27/0006 , G03F7/2004 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , G21K2201/067 , Y10T428/265
Abstract: In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.
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2.发明授权Optical arrangement, in particular projection exposure apparatus for EUV lithography, as well as reflective optical element with reduced contamination 有权光学布置，特别是用于EUV光刻的投影曝光装置，以及具有减少的污染的反射光学元件公开(公告)号：US08585224B2
公开(公告)日：2013-11-19
申请号：US13763709
申请日：2013-02-10
Applicant: Carl Zeiss SMT GmbH , ASML Netherlands B.V.
Inventor： Dirk Heinrich Ehm , Stephan Muellender , Thomas Stein , Johannes Hubertus Josephina Moors , Bastiaan Theodoor Wolschrijn , Dieter Kraus , Richard Versluis , Marcus Gerhardus Hendrikus Meijerink
CPC classification number: G03B27/16 , B82Y10/00 , G03F7/70841 , G03F7/70883 , G03F7/70916 , G21K2201/061
Abstract: An optical arrangement, e.g. a projection exposure apparatus (1) for EUV lithography, includes: a housing (2) enclosing an interior space (15); at least one, preferably reflective optical element (4-10, 12, 14.1-14.6) arranged in the housing (2); at least one vacuum generating unit (3) for the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1-18.10) arranged in the interior space (15) and enclosing at least the optical surface (17, 17.1, 17.2) of the optical element (4-10, 12, 14.1-14.5). A contamination reduction unit is associated with the vacuum housing (18.1-18.10) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).
Abstract translation: 光学装置，例如 用于EUV光刻的投影曝光装置（1）包括：封闭内部空间（15）的壳体（2）; 布置在壳体（2）中的至少一个优选反射光学元件（4-10,12,14.1-14.6）; 至少一个用于所述壳体（2）的内部空间（15）的真空发生单元（3）; 以及布置在所述内部空间（15）中并且至少包围所述光学元件（4-10,12,14.1-14.5）的光学表面（17,17.1,17.2）的至少一个真空壳体（18,18.1-18.10） 。 污染减少单元与真空壳体（18.1-18.10）相关联，并且至少紧邻光学表面（17,17.1,17.2）处的污染物质特别是水和/或烃的分压降低 与内部空间（15）中的污染物质的分压有关。
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3.发明申请公开(公告)号：US20130148200A1
公开(公告)日：2013-06-13
申请号：US13763709
申请日：2013-02-10
Applicant: Carl Zeiss SMT GmbH , ASML Netherlands B.V.
Inventor： Dirk Heinrich Ehm , Stephan Muellender , Thomas Stein , Johannes Hubertus Josephina Moors , Bastiaan Theodoor Wolschrijn , Dieter Kraus , Richard Versluis , Marcus Gerhardus Hendrikus Meijerink
IPC: G03B27/16
CPC classification number: G03B27/16 , B82Y10/00 , G03F7/70841 , G03F7/70883 , G03F7/70916 , G21K2201/061
Abstract: An optical arrangement, e.g. a projection exposure apparatus (1) for EUV lithography, includes: a housing (2) enclosing an interior space (15); at least one, preferably reflective optical element (4-10, 12, 14.1-14.6) arranged in the housing (2); at least one vacuum generating unit (3) for the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1-18.10) arranged in the interior space (15) and enclosing at least the optical surface (17, 17.1, 17.2) of the optical element (4-10, 12, 14.1-14.5). A contamination reduction unit is associated with the vacuum housing (18.1-18.10) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).
Abstract translation: 光学装置，例如 用于EUV光刻的投影曝光装置（1）包括：封闭内部空间（15）的壳体（2）; 布置在壳体（2）中的至少一个优选反射光学元件（4-10,12,14.1-14.6）; 至少一个用于所述壳体（2）的内部空间（15）的真空发生单元（3）; 以及布置在所述内部空间（15）中并且至少包围所述光学元件（4-10,12,14.1-14.5）的光学表面（17,17.1,17.2）的至少一个真空壳体（18,18.1-18.10） 。 污染减少单元与真空壳体（18.1-18.10）相关联，并且至少紧邻光学表面（17,17.1,17.2）处的污染物质特别是水和/或烃的分压降低 与内部空间（15）中污染物质的分压有关。
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公开(公告)号：US09778576B2
公开(公告)日：2017-10-03
申请号：US15046743
申请日：2016-02-18
Applicant: Carl Zeiss SMT GmbH
Inventor： Damian Fiolka , Michael Totzeck , Hartmut Enkisch , Stephan Muellender
IPC: G03F7/20
CPC classification number: G03F7/70191 , G03F7/70075 , G03F7/70116 , G03F7/702 , G03F7/70566
Abstract: An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel.
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5.发明申请公开(公告)号：US20160195820A1
公开(公告)日：2016-07-07
申请号：US15046743
申请日：2016-02-18
Applicant: Carl Zeiss SMT GmbH
Inventor： Damian Fiolka , Michael Totzeck , Hartmut Enkisch , Stephan Muellender
IPC: G03F7/20
CPC classification number: G03F7/70191 , G03F7/70075 , G03F7/70116 , G03F7/702 , G03F7/70566
Abstract: An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel.
Abstract translation: 用于微光刻的照明光学单元用照明光照亮物场。 该单元包括具有多个第一小面的第一小面镜和具有多个第二面的第二小面镜。 该单元具有分面对，其分别包括第一分面反射镜的小平面和第二分面反射镜的小平面，其预定义用于照亮对象场的多个照明通道。 至少一些照明通道在每种情况下都具有分配的偏振元件，用于预定义在各个照明通道中引导的照明光的单独偏振状态。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20140132941A1
公开(公告)日：2014-05-15
申请号：US14075313
申请日：2013-11-08
Applicant: Carl Zeiss SMT GmbH
Inventor： Hans-Juergen Mann , Wilheim Ulrich , Stephan Muellender , Hartmut Enkisch
CPC classification number: G02B5/0891 , G02B13/143 , G02B17/06 , G03F7/70175 , G03F7/70233
Abstract: An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.
Abstract translation: 成像光学系统具有多个反射镜。 这些图像将物体平面中的对象场映射成图像平面中的图像场。 在成像光学系统中，成像光的最大入射角）与反射镜的反射面和成像光学系统的像侧数值孔径之比小于33.8°。 这可以导致成像光学系统，其为反射镜的反射涂层提供了良好的条件，通过该成像光学系统可以实现低反射损失，用于在通过成像光学系统时成像光，特别是甚至在EUV范围的波长 小于10nm。
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公开(公告)号：US09720329B2
公开(公告)日：2017-08-01
申请号：US15070757
申请日：2016-03-15
Applicant: Carl Zeiss SMT GmbH
Inventor： Hartmut Enkisch , Stephan Muellender , Hans-Juergen Mann , Rolf Freimann
CPC classification number: G03F7/702 , G02B7/198 , G03F7/70233 , G03F7/70308
Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.
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公开(公告)号：US09606446B2
公开(公告)日：2017-03-28
申请号：US14732248
申请日：2015-06-05
Applicant: Carl Zeiss SMT GmbH
Inventor： Norbert Wabra , Boris Bittner , Martin Von Hodenberg , Hartmut Enkisch , Stephan Muellender , Olaf Conradi
CPC classification number: G03F7/702 , B82Y10/00 , G02B5/0816 , G02B5/0891 , G02B17/0663 , G02B27/1033 , G03F7/70308 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062
Abstract: A reflective optical element of an optical system for EUV lithography and an associated manufacturing method. The reflective optical element (20) includes a multilayer system (23, 83) for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase φ, and a capping layer (25, 85) made from a capping layer material. The method includes determining a dependency according to which the phase of the reflected wave varies with the thickness d of the capping layer, determining a linearity-region in the dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer, and creating a thickness profile in the capping layer such that both the maximum thickness and the minimum thickness in the thickness profile are in the linearity-region.
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公开(公告)号：US20160195817A1
公开(公告)日：2016-07-07
申请号：US15070757
申请日：2016-03-15
Applicant: Carl Zeiss SMT GmbH
Inventor： Hartmut Enkisch , Stephan Muellender , Hans-Juergen Mann , Rolf Freimann
IPC: G03F7/20
CPC classification number: G03F7/702 , G02B7/198 , G03F7/70233 , G03F7/70308
Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.
Abstract translation: 本发明涉及为EUV设计的微光刻投影曝光装置的投影目标，用于将在投影曝光装置的操作中照亮的物平面成像到图像平面中。 投影物镜具有至少一个包括多个单独的镜片段的镜片段布置。 与相同镜片段布置的镜片段相关联的部分光束路径彼此不同，并且分别提供用于将物平面（OP）成像到图像平面（IP）中的部分光束路径。 部分光束路径叠加在图像平面（IP）中。 叠加在图像平面（IP）中的相同点上的至少两个部分光束被相同镜片段布置的不同镜像段反射。
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10.发明授权Deflection mirror and projection exposure apparatus for microlithography comprising such a deflection mirror 有权偏转镜和用于微光刻的投影曝光装置，包括这种偏转镜公开(公告)号：US09341958B2
公开(公告)日：2016-05-17
申请号：US14032724
申请日：2013-09-20
Applicant: CARL ZEISS SMT GmbH
Inventor： Hartmut Enkisch , Stephan Muellender , Martin Endres
CPC classification number: G03F7/702 , B82Y10/00 , G02B17/06 , G02B17/0663 , G03F7/70191 , G03F7/70308 , G03F7/70316 , G21K1/062 , G21K2201/061 , G21K2201/067
Abstract: A deflection mirror (1, 501, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus (1067) using the deflection mirror with grazing incidence. This deflection mirror has a substrate (3, 503, etc.) and at least one layer system (5, 505, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%, in particular less than 12%.
Abstract translation: 一种用于使用具有掠入射的偏转镜照射投影曝光设备（1067）的物平面中的物场的微光刻投影曝光设备的偏转镜（1,501等）。 该偏转镜具有衬底（3,503等）和至少一个层系（5,505等），并且在操作期间，光以多个入射角撞击在所述反射镜上，其中层系是 设计成使得对于波长小于30nm的光，对于入射角在55°和70°之间的反射率的变化小于20％，特别是小于12％。
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