公开(公告)号：US06777147B1

公开(公告)日：2004-08-17

申请号：US10249944

申请日：2003-05-21

申请人： Carlos A. Fonseca ,  Scott J. Bukofsky ,  Kafai Lai

发明人： Carlos A. Fonseca ,  Scott J. Bukofsky ,  Kafai Lai

IPC分类号： G03F900

CPC分类号： G03F7/705 ,  G03F7/70466 ,  G03F7/70625 ,  G03F7/70641

摘要： A method of evaluating process effects of multiple exposure photolithographic processes by first determining a set of expected images for each exposure step or process of the multiple exposure process individually and then obtaining a composite set of images by sequentially perturbing images from a first or previous exposure step by weighted images from the subsequent exposure step. Preferably, the expected images are determined by simulation in the form of normalized aerial images over a range of defocus for each exposure step, and the weighting factor used is the dose-ratio of the subsequent exposure dose to the prior step exposure dose. The resulting composite set of images may be used to evaluate multiple exposure processes, for example, to provide an estimate of yield for a given budget of dose and focus errors, or alternatively, to provide specifications for tool error budgets required to obtain a target yield.

摘要翻译： 一种评估多次曝光光刻处理的处理效果的方法，其通过首先单独确定每个曝光步骤或多次曝光处理的预期图像集合，然后通过依次扰动来自第一曝光步骤或先前曝光步骤的图像来获得复合图像组 通过后续曝光步骤的加权图像。 优选地，通过在每个曝光步骤的散焦范围上的归一化空间图像的形式的模拟来确定预期图像，并且所使用的加权因子是随后的曝光剂量与先前阶段曝光剂量的剂量比。 所得到的复合图像集合可以用于评估多个曝光过程，例如，为给定的剂量和焦点误差预算提供产量的估计，或者提供用于获得目标产量所需的工具误差预算的规格 。

公开(公告)号：US09298870B1

公开(公告)日：2016-03-29

申请号：US13472598

申请日：2012-05-16

申请人： Joy Cheng ,  Kafai Lai ,  Chi-Chun Liu ,  Jed W. Pitera ,  Charles T. Rettner

发明人： Joy Cheng ,  Kafai Lai ,  Chi-Chun Liu ,  Jed W. Pitera ,  Charles T. Rettner

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G03F7/0002 ,  G06F2217/08

摘要： Methods and computer program products for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates. The methods include generating mathematical models that operate on mathematical descriptions of the number and locations of cylindrical self-assembled domains in a mathematical description of a guiding pattern.

摘要翻译： 方法和计算机程序产品，用于设计用于指导在基板上的指定位置形成自组装域的地形图案。 所述方法包括在引导模式的数学描述中生成对圆柱形自组装域的数量和位置的数学描述进行操作的数学模型。

公开(公告)号：US08682634B2

公开(公告)日：2014-03-25

申请号：US13613061

申请日：2012-09-13

申请人： Saeed Bagheri ,  Fook-Luen Heng ,  Rajiv Vasant Joshi ,  Kafai Lai ,  David Osmond Melville ,  Saibal Mukhopadhyay ,  Alan E Rosenbluth ,  Rama N. Singh ,  Kehan Tian

发明人： Saeed Bagheri ,  Fook-Luen Heng ,  Rajiv Vasant Joshi ,  Kafai Lai ,  David Osmond Melville ,  Saibal Mukhopadhyay ,  Alan E Rosenbluth ,  Rama N. Singh ,  Kehan Tian

IPC分类号： G06F17/50 ,  G06G7/62

CPC分类号： G06F17/5009 ,  G03F1/36 ,  G03F1/70 ,  G06F2217/10

摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.

摘要翻译： 提出了包括访问电路产量正向模拟的结果的技术，结果至少包括电路产量结果，包括模拟设备形状。 使用电路产量结果，确定至少模拟装置形状的高级特征。 基于确定的高水平特征和使用电路产量结果，构建了一种预测产量的紧凑模型，该紧凑模型包括多个可调参数，并构建了用于预测产量的紧凑模型，包括调整可调参数直到 满足至少一个第一预定标准。 构建最优化问题，其至少包括用于产量，目标和多个约束的紧凑模型。 使用优化问题，根据多个约束修改目标，直到满足至少一个第二预定标准。

公开(公告)号：US08398868B2

公开(公告)日：2013-03-19

申请号：US12468391

申请日：2009-05-19

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/312

CPC分类号： B81C1/00031 ,  B81C1/00404 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/31144

摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

摘要翻译： 例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。 例如，开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻，在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。 在开口中形成离散的，分离的畴，其被去除以形成孔，其可以转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

公开(公告)号：US08372565B2

公开(公告)日：2013-02-12

申请号：US12872312

申请日：2010-08-31

申请人： Kehan Tian ,  Alan E. Rosenbluth ,  David O. Melville ,  Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai

发明人： Kehan Tian ,  Alan E. Rosenbluth ,  David O. Melville ,  Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai

IPC分类号： G03F9/00

CPC分类号： G03F1/70 ,  G03F7/70433

摘要： A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.

摘要翻译： 一种用源照射掩模的方法，用于通过光刻系统将期望的图像图案投影到光活性材料上，包括：限定掩模的表示; 获得分数抗蚀散射噪声（FRSN）参数; 基于所述FRSN参数确定第一组光强度值与边缘粗糙度度量之间的第一关系; 确定第二组光强度值和光刻性能度量之间的第二关系; 基于所述第一和第二关系之一施加一组度量约束; 基于剩余的两个关系建立优化的目标函数; 基于所述度量约束和所述目标函数的集合来确定所述掩码的表示的最佳约束值; 并输出这些值。

公开(公告)号：US08227180B2

公开(公告)日：2012-07-24

申请号：US13158901

申请日：2011-06-13

申请人： Timothy Allan Brunner ,  Sean David Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

发明人： Timothy Allan Brunner ,  Sean David Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

IPC分类号： G03F7/00 ,  G03F7/028 ,  G03F7/11 ,  G03F7/20 ,  G03F7/40

CPC分类号： G03F7/091 ,  G03F7/70216 ,  Y10S430/127

摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.

摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

公开(公告)号：US20120052418A1

公开(公告)日：2012-03-01

申请号：US12872312

申请日：2010-08-31

申请人： Kehan Tian ,  Alan E. Rosenbluth ,  David O. Melville ,  Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai

发明人： Kehan Tian ,  Alan E. Rosenbluth ,  David O. Melville ,  Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai

IPC分类号： G03F1/00 ,  G06F17/50 ,  G03F7/20

CPC分类号： G03F1/70 ,  G03F7/70433

摘要： A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.

摘要翻译： 一种用源照射掩模的方法，用于通过光刻系统将期望的图像图案投影到光活性材料上，包括：限定掩模的表示; 获得分数抗蚀散射噪声（FRSN）参数; 基于所述FRSN参数确定第一组光强度值与边缘粗糙度度量之间的第一关系; 确定第二组光强度值和光刻性能度量之间的第二关系; 基于所述第一和第二关系之一施加一组度量约束; 基于剩余的两个关系建立优化的目标函数; 基于所述度量约束和所述目标函数的集合来确定所述掩码的表示的最佳约束值; 并输出这些值。

公开(公告)号：US20120008134A1

公开(公告)日：2012-01-12

申请号：US12834379

申请日：2010-07-12

申请人： Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

发明人： Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

IPC分类号： G01N21/00

CPC分类号： G03F1/36 ,  G03F7/70116 ,  G03F7/70125 ,  G03F7/70525

摘要： Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask.

摘要翻译： 使用曝光工具中的可编程照明器来增加刀具匹配的自由度。 提供了一种工具匹配方法，其利用基于用户特定约束的线性规划（LP）问题对各个源像素强度的精细调整，以最小化两种工具之间的平版印刷晶片数据的差异。 光刻数据可以是来自多个目标和多个工艺条件的关键尺寸差异。 该LP问题可以修改为包括使用多次扫描曝光来匹配源的二进制变量。 该方法可以应用于参考工具是物理工具或虚拟理想工具的场景。 此外，该方法可以匹配不同的光刻系统，每个包括工具和掩模。

公开(公告)号：US07761839B2

公开(公告)日：2010-07-20

申请号：US11874274

申请日：2007-10-18

申请人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

发明人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： Methods, and a program storage device for executing such methods, for performing model-based optical proximity correction by providing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix. A first polygon having a number of vertices representative of the located points of interest is computed, followed by determining a spatial relation between its vertices and the ROI. The vertices of the first polygon are then pinned to boundaries of and within the ROI such that a second polygon is formed on the ROI. The process is repeated for all vertices of the first polygon such that the second polygon is collapsed onto the ROI. This collapsed second polygon is then used to correct for optical proximity.

摘要翻译： 方法和用于执行这种方法的程序存储装置，用于通过提供具有感兴趣区域（ROI）的掩模矩阵并且在掩模矩阵内定位多个感兴趣点来执行基于模型的光学邻近校正。 计算具有代表所述定位的兴趣点的顶点数的第一多边形，然后确定其顶点和ROI之间的空间关系。 然后将第一多边形的顶点固定在ROI的边界和内部，使得在ROI上形成第二多边形。 对第一多边形的所有顶点重复该过程，使得第二多边形折叠到ROI上。 然后使用这个折叠的第二个多边形来校正光学接近度。

公开(公告)号：US20100175043A1

公开(公告)日：2010-07-08

申请号：US12349108

申请日：2009-01-06

申请人： Maharaj Mukherjee ,  James A. Culp ,  Scott M. Mansfield ,  Kafai Lai ,  Alan E. Rosenbluth

发明人： Maharaj Mukherjee ,  James A. Culp ,  Scott M. Mansfield ,  Kafai Lai ,  Alan E. Rosenbluth

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70

摘要： A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI1 of about 5λ/NA to distance ROI2 when the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROI1 to ROI2 are smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy.

摘要翻译： 提供了一种用于在用于制造半导体集成电路的光掩模的设计中对光刻工艺进行建模的方法，更具体地说，用于模拟中间范围闪光效应。 对于当点扩散函数具有根据预定标准缓慢变化的斜率时，从约5λ/ NA的第一ROI1到距离ROI2的影响区域（ROI），则至少在从ROI1到ROI2的距离范围内的掩模形状 在计算SOCS卷积之前进行平滑处理。 该方法提供了一种用于以足够的精度模拟中等范围闪光效果的快速方法。