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1.发明授权Formation of microchannels from low-temperature plasma-deposited silicon oxynitride 有权从低温等离子体沉积的氮氧化硅形成微通道
公开(公告)号：US6096656A
公开(公告)日：2000-08-01
申请号：US339715
申请日：1999-06-24
CPC分类号： B81C1/00071 , B81C1/00436 , G01N27/44791 , G01N30/6095 , B81B2201/058 , B81C2201/0109
摘要： A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.
摘要翻译： 公开了一种在衬底上形成一个或多个流体微通道的方法，其与在衬底上形成集成电路相兼容。 微通道可以形成在衬底的上表面下方，上表面上方或两者。 通过在由牺牲材料（例如光致抗蚀剂）形成的模具上沉积氮氧化硅覆盖层而形成微通道，后者可以被去除。 使用高密度等离子体（例如电子回旋共振等离子体或电感耦合等离子体）在低温（<100℃），优选在室温附近沉积氧氮化硅。 在本发明的一些实施例中，微通道可以用氮氧化硅完全衬里，以向其中的流体呈现均匀的材料组成。 本发明具有形成用于色谱和电泳的微通道的应用。 此外，微通道可用于电动泵送，也可用于局部或全局衬底冷却。
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公开(公告)号：US06599436B1
公开(公告)日：2003-07-29
申请号：US10016956
申请日：2001-12-06
IPC分类号： H01L2100
CPC分类号： B81B1/006 , B01J19/0093 , B01J2219/00783 , B01J2219/00804 , B01J2219/00813 , B01J2219/00819 , B01L3/502707 , B01L3/502715 , B01L3/565 , B01L2200/027 , B01L2200/12 , B01L2300/0816 , B01L2300/0838 , B81B2201/058 , B81B2201/13 , C03C27/06
摘要： A method is disclosed to form external interconnections to a microfluidic device for coupling of a fluid or light or both into a microchannel of the device. This method can be used to form optical or fluidic interconnections to microchannels previously formed on a substrate, or to form both the interconnections and microchannels during the same process steps. The optical and fluidic interconnections are formed parallel to the plane of the substrate, and are fluid tight.
摘要翻译： 公开了一种形成与微流体装置的外部互连的方法，用于将流体或光或二者耦合到装置的微通道中。 该方法可以用于形成先前形成在衬底上的微通道的光学或流体互连，或者在相同的工艺步骤期间形成互连和微通道。 光学和流体互连平行于基板的平面形成，并且是流体密封的。
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3.发明授权Composition/bandgap selective dry photochemical etching of semiconductor materials 失效半导体材料的组成/带隙选择性干光化学蚀刻
公开(公告)号：US4648938A
公开(公告)日：1987-03-10
申请号：US786560
申请日：1985-10-11
IPC分类号： H01L21/268 , H01L21/306
CPC分类号： H01L21/30621 , H01L21/268
摘要： A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.
摘要翻译： 在具有不同组成的第二半导体材料和直接带隙Eg2的存在下，选择性地光化学干蚀刻给定组合物的第一半导体材料和直接带隙Eg1的方法，其中Eg2> Eg1，所述第二半导体材料在 所述方法包括在两种材料相同的光子通量和相同的气体蚀刻剂的条件下进行，其中所述蚀刻剂对于不存在光子的材料的化学蚀刻将无效，所述光子的能量大于Eg1但小于 Eg2，由此所述第一半导体材料被光化学蚀刻并且所述第二材料基本上不被蚀刻。
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4.发明授权
公开(公告)号：US5463649A
公开(公告)日：1995-10-31
申请号：US102907
申请日：1993-08-06
CPC分类号： H01S3/063 , H01S3/0941 , H01S3/025 , H01S3/0635 , H01S3/0675 , H01S3/09408 , H01S3/1095 , H01S3/113
摘要： A monolithically integrated photonic circuit combining a semiconductor source of excitation light with an optically active waveguide formed on the substrate. The optically active waveguide is preferably formed of a spin-on glass to which are added optically active materials which can enable lasing action, optical amplification, optical loss, or frequency conversion in the waveguide, depending upon the added material.
摘要翻译： 将激发光的半导体源与在衬底上形成的光学有源波导组合的单片集成光电子电路。 光学有源波导优选地由旋涂玻璃形成，根据所添加的材料，旋涂玻璃上添加了光学活性材料，其可以使波导中的激光作用，光放大，光损耗或频率转换。
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公开(公告)号：US4838989A
公开(公告)日：1989-06-13
申请号：US89206
申请日：1987-08-25
CPC分类号： C04B41/009 , C04B41/5346 , C04B41/91 , C23F1/02 , G02B6/245
摘要： The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.
摘要翻译： 通过辐射驱动的化学反应蚀刻固体离子基质的表面。 该方法包括将涂覆有反应物材料层的离子基质暴露于其表面上，例如辐射。 激光，以引起基板的局部熔化，这导致基板和涂层材料之间的聚变反应的发生。 然后将所得反应产物和过量的反应物盐用对基材相对惰性的溶剂从基材表面除去。 激光驱动的化学蚀刻工艺特别适用于蚀刻离子盐底物，例如LiNbO 3等固体无机盐，例如用在电光/声光器件中。 它也适用于其中需要蚀刻工艺以产生具有光滑表面形态的蚀刻离子基底或当需要非常快速的蚀刻速率时的应用。
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6.发明授权Surface passivation process of compound semiconductor material using UV photosulfidation 失效化学半导体材料的表面钝化工艺采用紫外光照射
公开(公告)号：US5451542A
公开(公告)日：1995-09-19
申请号：US263107
申请日：1994-06-21
申请人： Carol I. H. Ashby
发明人： Carol I. H. Ashby
IPC分类号： H01L21/314 , H01L21/26
CPC分类号： H01L21/314
摘要： A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.
摘要翻译： 通过用紫外线辐射光解中和分子硫蒸气来钝化化合物半导体表面以形成反应性硫的方法，然后反应性硫然后与化合物半导体的表面反应并钝化。
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7.发明授权Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication 失效半导体器件制造中的电子载体控制光化学蚀刻工艺
公开(公告)号：US4880493A
公开(公告)日：1989-11-14
申请号：US207487
申请日：1988-06-16
IPC分类号： H01L21/306 , H01L21/3063 , H01L21/465
CPC分类号： H01L21/465 , H01L21/30621 , H01L21/3063 , Y10S438/924
摘要： An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.
摘要翻译： 用于在半导体器件制造中进行图案化和选择性去除材料的电子载体控制的光化学蚀刻工艺包括按顺序选择性离子注入，光化学干蚀刻和热退火的步骤。 在选择性离子注入步骤中，期望图案中的半导体材料的区域被损坏，未被植入的材料的其余区域保持不损伤。 与未损伤区域相比，电子和空穴的复合速率在损伤区域中增加。 在离子注入步骤之后的光化学干蚀刻步骤中，半导体未损坏区域中的材料比代表图案的损伤区域中的材料被去除得快，留下离子注入损坏区域作为半导体材料上的凸起表面结构 。 在光化学干蚀刻步骤完成之后，使用热退火步骤来恢复半导体材料的损伤区域的导电性。
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8.发明授权Dopant type and/or concentration selective dry photochemical etching of semiconductor materials 失效半导体材料的掺杂型和/或浓度选择性干光化学蚀刻
公开(公告)号：US4648936A
公开(公告)日：1987-03-10
申请号：US786563
申请日：1985-10-11
IPC分类号： H01L21/306
CPC分类号： H01L21/30621
摘要： A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions.In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.
摘要翻译： 一种在具有不同于所述第一材料的组成的第二半导体材料的存在下选择性地光化学干蚀刻给定组合物的第一半导体材料的方法，所述第二材料在所述方法期间基本上不被蚀刻，包括使两种材料 在其中所述蚀刻剂对于任一材料的化学蚀刻将无效的条件下，大于其各自的直接带隙的能量的相同光子通量以及相同的气体化学蚀刻剂是光子不存在，所述条件还使得所得到的电子结构 在所述光子通量下的第一半导体材料足以使所述第一材料在所述条件下进行基本的光化学蚀刻，并且使得所述光子通量下的所述第二半导体材料的所得电子结构不足以使所述第二材料经历显着的 照相 在所述条件下进行刻蚀。 在优选的模式中，材料受到偏压，其分别抑制n型或p-型材料中的蚀刻，但不分别在p型或n型材料中蚀刻; 或者抑制在两种n型或两种p型材料中掺杂较多的蚀刻。
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9.发明授权公开(公告)号：US06765242B1
公开(公告)日：2004-07-20
申请号：US09547152
申请日：2000-04-11
申请人： Ping-Chih Chang , Albert G. Baca , Nein-Yi Li , Hong Q. Hou , Carol I. H. Ashby
发明人： Ping-Chih Chang , Albert G. Baca , Nein-Yi Li , Hong Q. Hou , Carol I. H. Ashby
IPC分类号： H01L31072
CPC分类号： H01L29/66318 , H01L29/2003 , H01L29/7371
摘要： An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, Von, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.
摘要翻译： 公开了一种NPN双异质结双极晶体管（DHBT），其具有包含夹在n型掺杂集电极和发射极区之间的p型掺杂的砷化镓镓（InGaAsN）层的基极区。 使用InGaAsN作为基极区域会降低晶体管导通电压Von，从而降低器件内的功耗。 具有用于形成低功率电子电路的应用的NPN晶体管形成在砷化镓（GaAs）衬底上，并且可以在商业GaAs铸造厂制造。 还公开了制造NPN晶体管的方法。
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公开(公告)号：US5814238A
公开(公告)日：1998-09-29
申请号：US542149
申请日：1995-10-12
申请人： Carol I. H. Ashby , Albert G. Baca , Peter Esherick , John E. Parmeter , Dennis J. Rieger , Randy J. Shul
发明人： Carol I. H. Ashby , Albert G. Baca , Peter Esherick , John E. Parmeter , Dennis J. Rieger , Randy J. Shul
IPC分类号： C23F4/00 , H01L21/3213 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： C23F4/00 , H01L21/32136
摘要： A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.
摘要翻译： 一种干法蚀刻过渡金属的方法。 过渡金属（或过渡金属合金如硅化物）在基板上的干蚀刻方法包括在过渡金属附近提供至少一种含氮或磷的pi受体配体，并蚀刻过渡金属 以形成挥发性过渡金属/π-受体配体复合物。 干蚀刻可以在诸如反应离子蚀刻（RIE）系统，下游等离子体蚀刻系统（等离子体余辉），化学辅助离子束蚀刻（CAIBE）系统等等的等离子体蚀刻系统中进行。 干蚀刻也可以通过直接从配体源气体（例如由一氧化氮产生的亚硝酰基配体）或与激发的粒子例如光子，电子，离子，原子或分子的接触产生直接受体配体来进行。 在本发明的一些优选实施方案中，中间反应物种如羰基或卤化物配体用于与过渡金属的初始化学反应，其中中间反应物种至少部分被pi受体配体替代 形成挥发性过渡金属/π-受体配体复合物。
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