摘要:
An insulated gate field effect transistor having reduced gate-drain overlap and a method for manufacturing the insulated gate field effect transistor. A gate structure is formed on a major surface of a semiconductor substrate. A source extension region and a drain extension region are formed in a semiconductor material using an angled implant. The source extension region extends under the gate structure, whereas the drain extension region is laterally spaced apart from the gate structure. A source region is formed in the semiconductor substrate and a drain region is formed in the semiconductor substrate, where the source and drain regions are laterally spaced apart from the gate structure. A source-side halo region is formed in the semiconductor substrate adjacent the source extension region.
摘要:
An insulated gate field effect semiconductor component having a source-side halo region and a method for manufacturing the semiconductor component. A gate structure is formed on a semiconductor substrate. The source-side halo region is formed in the semiconductor substrate. After formation of the source-side halo region, spacers are formed adjacent opposing sides of the gate structure. A source extension region and a drain extension region are formed in the semiconductor substrate using an angled implant. The source extension region extends under the gate structure, whereas the drain extension may extend under the gate structure or be laterally spaced apart from the gate structure. A source region and a drain region are formed in the semiconductor substrate.
摘要:
A metal gate electrode formed with high temperature activation of source/drain and LDD implants and a process for manufacture. A polysilicon alignment structure is formed on a silicon substrate. Source/drain regions are formed in alignment with the polysilicon alignment structure, and the alignment structure and the substrate are subjected to a first rapid thermal anneal. LDD implant regions are formed and the alignment structure and the substrate having the LDD regions are subjected to a second rapid thermal anneal. The polysilicon alignment structure is replaced with a metal gate electrode and gate dielectric.
摘要:
A semiconductor structure an a process for its manufacture. First and second gate dielectric layers are formed on a semiconductor substrate between nitride spacers, and a metal gate electrode is formed on the gate dielectric layers. Lightly-doped drain regions and source/drain regions are disposed in the substrate and aligned with the electrode and spacers. A silicide contact layer is disposed over an epitaxial layer on the substrate over the source/drain regions. The metal gate electrode is aligned using a polysilicon alignment structure, which permits high temperature processing before the metal is deposited.
摘要:
A semiconductor device having a gate electrode with a sidewall air gap is provided. In accordance with this embodiment, at least one gate electrode is formed over a substrate. A spacer is then formed adjacent an upper sidewall portion of the gate electrode such that an open area is left beneath the spacer. Next, a dielectric layer is formed over the spacer and the gate electrode, thereby leaving an air gap in the open area. In accordance with one aspect of the invention, both the gate electrode and the spacer adjacent the gate electrode are formed from polysilicon. This, for example, allows the formation of a wider contact area to the gate electrode.
摘要:
A semiconductor structure and a process for its manufacture. A metal gate electrode is formed on a semiconductor substrate, the gate electrode being between nitride spacers. Lightly-doped drain regions and source/drain regions are disposed in the substrate and aligned with the electrode and spacers. A silicide contact layer is disposed over an epitaxial layer on the substrate over the source/drain regions.
摘要:
A method for slowing the diffusion of boron ions in a CMOS structure includes a preanneal step which can be incorporated as part of a step in which silane is deposited across the surface of the wafer. After the last implant on a CMOS device, silane (SiH.sub.4) is deposited over the surface of the wafer using a chemical vapor deposition (CVD) tool. The deposition of silane is done at 400.degree. C. The temperature is raised in the CVD tool to a temperature in the range of 550.degree. C. to 650.degree. C. and held for 30-60 minutes. This temperature does not affect the thin film of silicon which is formed from the silane, yet provides the necessary thermal cycle to "repair" the crucial first 200 .ANG. to 600 .ANG. of the silicon surface. Normal processing steps, including a rapid thermal anneal for 30 seconds at 1025.degree. C. follow. The RTA is necessary to activate the dopants (arsenic and boron) in the source and drain of the respective devices. The boron dopant species diffuses less during subsequent rapid thermal anneal cycles since the crucial first 200 .ANG. to 600 .ANG. of the silicon surface have been repaired using this preanneal step.
摘要:
The formation of a shortage protection region is disclosed. In one embodiment, a method includes three steps. In the first step, a first ion implantation is applied to form lightly doped regions within a semiconductor substrate adjacent to sidewalls of a gate over the substrate. In the second step, two spaces are formed on the substrate, each adjacent to a sidewall of the gate, so that a second ion implantation forms heavily doped regions within the substrate adjacent to the first spacers. In the third step, two additional spacers are formed on the substrate, each overlapping and extending beyond a corresponding spacer previously formed. Thus, a third ion implantation forms lightly doped shortage protection regions within the substrate adjacent to the spacers most recently formed.
摘要:
A semiconductor device having asymmetrically-doped gate electrode and active region and a process of fabricating such a device is provided. According to one embodiment of the invention, a polysilicon layer is formed over the substrate. The polysilicon layer is then implanted with a first dopant to form a doped polysilicon layer. Portions of the doped polysilicon layer are then removed to form at least one gate electrode. Active regions of the substrate adjacent the gate electrode are implanted with a second dopant to form source/drain regions in the substrate. In this manner, the implant used to form the source/drain regions may be decoupled from the implant used to form the gate electrode. This, for example, allows for shallower source/drain regions to be formed without the formation of the depletion layer in the gate electrode.
摘要:
An integrated circuit that has logic and a static random access memory (SRAM) array has improved performance by treating the interlayer dielectric (ILD) differently for the SRAM array than for the logic. The N channel logic and SRAM transistors have ILDs with non-compressive stress, the P channel logic transistor ILD has compressive stress, and the P channel SRAM transistor at least has less compressive stress than the P channel logic transistor, i.e., the P channel SRAM transistors may be compressive but less so than the P channel logic transistors, may be relaxed, or may be tensile. It is beneficial for the integrated circuit for the P channel SRAM transistors to have a lower mobility than the P channel logic transistors. The P channel SRAM transistors having lower mobility results in better write performance; either better write time or write margin at lower power supply voltage.