公开(公告)号：US20070296671A1

公开(公告)日：2007-12-27

申请号：US11477794

申请日：2006-06-30

申请人： Chang Wook Han ,  Sung Joon Bae

发明人： Chang Wook Han ,  Sung Joon Bae

IPC分类号： G09G3/36

CPC分类号： G09G3/3233 ,  G09G3/3241 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0256 ,  G09G2310/0262

摘要： Provided is a light emitting device. Particularly, the light emitting device comprises a threshold voltage compensator. The threshold voltage compensator is connected between a gate and a drain of the driving TFT and has a gate connected to a second scan line to temporarily store at the storage capacitor a gate voltage reflecting a threshold voltage of the driving TFT in response to a second scan signal supplied by a second scan line and to transmit the data signal regardless of variations in the threshold voltage of the driving TFT when the output current is supplied to the light emitting diode.

摘要翻译： 提供了一种发光装置。 特别地，发光器件包括阈值电压补偿器。 阈值电压补偿器连接在驱动TFT的栅极和漏极之间，并且具有连接到第二扫描线的栅极，以便在存储电容器上临时存储响应于第二扫描而反映驱动TFT的阈值电压的栅极电压 信号，并且当输出电流被提供给发光二极管时，不管驱动TFT的阈值电压的变化如何，都发送数据信号。

公开(公告)号：US07456580B2

公开(公告)日：2008-11-25

申请号：US11477794

申请日：2006-06-30

申请人： Chang Wook Han ,  Sung Joon Bae

发明人： Chang Wook Han ,  Sung Joon Bae

IPC分类号： G09G3/10

CPC分类号： G09G3/3233 ,  G09G3/3241 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0256 ,  G09G2310/0262

摘要： Provided is a light emitting device. Particularly, the light emitting device comprises a threshold voltage compensator. The threshold voltage compensator is connected between a gate and a drain of the driving TFT and has a gate connected to a second scan line to temporarily store at the storage capacitor a gate voltage reflecting a threshold voltage of the driving TFT in response to a second scan signal supplied by a second scan line and to transmit the data signal regardless of variations in the threshold voltage of the driving TFT when the output current is supplied to the light emitting diode.

摘要翻译： 提供了一种发光装置。 特别地，发光器件包括阈值电压补偿器。 阈值电压补偿器连接在驱动TFT的栅极和漏极之间，并且具有连接到第二扫描线的栅极，以便在存储电容器上临时存储响应于第二扫描而反映驱动TFT的阈值电压的栅极电压 信号，并且当输出电流被提供给发光二极管时，不管驱动TFT的阈值电压的变化如何，都发送数据信号。

公开(公告)号：US07221337B1

公开(公告)日：2007-05-22

申请号：US09667003

申请日：2000-09-21

申请人： Woong Sik Choi ,  Chang Wook Han ,  Sung Joon Bae

发明人： Woong Sik Choi ,  Chang Wook Han ,  Sung Joon Bae

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2320/0242 ,  H01L27/12 ,  H01L27/3211 ,  H01L27/3244 ,  H05B33/08 ,  Y02B20/32

摘要： An electro-luminescence display which obtains proper color realization even though identical data driving waveforms are applied to each group of R, G and B pixel cells. In the display, a plurality of data lines cross a plurality of gate lines to define a plurality of pixel cell areas. A plurality of power supply lines pass through the pixel cell areas. A switching device is provided in each pixel cell area in such a manner to be electrically connected to the gate line and the data line. A plurality of driving devices are patterned based on a ratio of channel width to channel length in accordance with the type of pixel cell area. Each driving device having a gate connected to one electrode of the switching device and a source connected to the power supply line at each of the pixel cell areas. A plurality of EL diodes are connected to the plurality of driving devices, respectively. A wiring is commonly connected to the plurality of power supply lines. The R, G and B pixel cells are independently driven using different currents, although a common voltage is received by the driving devices.

摘要翻译： 即使相同的数据驱动波形也可以获得适当的颜色实现的电致发光显示器被应用于每组R，G和B像素单元。 在显示器中，多条数据线与多条栅极线交叉以限定多个像素单元区域。 多个电源线通过像素单元区域。 在每个像素单元区域中以与栅极线和数据线电连接的方式设置开关器件。 根据像素单元区域的类型，基于沟道宽度与沟道长度的比率来图案化多个驱动装置。 每个驱动装置具有连接到开关装置的一个电极的栅极和在每个像素单元区域处连接到电源线的源极。 多个EL二极管分别连接到多个驱动装置。 布线通常连接到多个电源线。 虽然驱动装置接收到公共电压，但是使用不同的电流独立地驱动R，G和B像素单元。

公开(公告)号：US07851787B2

公开(公告)日：2010-12-14

申请号：US11645733

申请日：2006-12-27

申请人： Chang Wook Han

发明人： Chang Wook Han

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/105 ,  H01L51/0061 ,  H01L51/0071 ,  H01L51/0541 ,  H01L51/0545

摘要： The present application relates to an organic thin film transistor with tunneling barrier layer and method of manufacturing the same improving the mobility properties of the thin film transistor and preventing the current crowding at low voltages. The organic thin film transistor includes a buffer layer on a substrate, a source and drain electrodes on the buffer layer, wherein each of the source and drain electrodes is in an island shape, a tunneling barrier layer on the source and drain electrodes, an organic semiconductor layer on the tunneling barrier layer, a gate insulation layer on the organic semiconductor layer, and a gate electrode overlapping both edges of the source and drain electrodes, and formed on the gate insulation layer, and wherein the tunneling barrier layer under the organic semiconductor layer is formed between the source and drain electrodes and the gate electrode.

摘要翻译： 本申请涉及具有隧道势垒层的有机薄膜晶体管及其制造方法，其改善了薄膜晶体管的迁移率特性并防止了低电压下的电流拥挤。 有机薄膜晶体管包括衬底上的缓冲层，缓冲层上的源极和漏极，其中源极和漏极各自为岛状，源极和漏极上的隧道势垒层，有机薄膜晶体管 半导体层，有机半导体层上的栅极绝缘层和与源极和漏极的两个边缘重叠的栅电极，并且形成在栅极绝缘层上，并且其中有机半导体下的隧道势垒层 在源电极和漏电极和栅电极之间形成层。

公开(公告)号：US06509939B1

公开(公告)日：2003-01-21

申请号：US09348704

申请日：1999-07-07

申请人： Jae Kyun Lee ,  Chang Wook Han

发明人： Jae Kyun Lee ,  Chang Wook Han

IPC分类号： G02F11368

CPC分类号： G02F1/134363 ,  G02F2001/134381

摘要： A hybrid switching mode liquid crystal display device according to the present invention comprises first and second substrates, a gate bus line and a transparent data bus line defining unit pixel region, a common line parallel to a gate bus line in the pixel region, a TFT on the cross of a data bus line and the gate bus lines in the pixel region, a common electrode and a storage capacitor line in the pixel region, a gate insulator having holes on the gate bus line, the common electrode, and the storage capacitor lines, a passivation layer having holes on the gate insulator, a first alignment layer with a fixed alignment direction on the passivation layer, at least one counter electrode on the second substrate applying vertical and inclined electric fields with the common and data electrodes on the first substrate, a black matrix on the counter electrodes to prevent light leakage which may be generated around TFT, the gate bus lines, and the data bus lines, a color filter layer on the black matrix and the second substrate, a second alignment layer on the color filter layer, and a liquid crystal layer between the first and second substrates.

摘要翻译： 根据本发明的混合开关模式液晶显示装置包括第一和第二基板，栅极总线和限定单位像素区域的透明数据总线线，与像素区域中的栅极总线平行的公共线，TFT 在像素区域的数据总线和栅极总线的交叉处，像素区域中的公共电极和辅助电容线，在栅极总线，公共电极和存储电容器上具有孔的栅极绝缘体 线路，在栅极绝缘体上具有孔的钝化层，在钝化层上具有固定的取向方向的第一取向层，第二衬底上的至少一个对电极施加垂直和倾斜的电场，其中公共和数据电极在第一 基板，相对电极上的黑矩阵，以防止可能在TFT周围产生的漏光，栅极总线和数据总线，b上的滤色器层 缺少矩阵和第二基板，滤色器层上的第二取向层，以及第一和第二基板之间的液晶层。

公开(公告)号：US20120097954A1

公开(公告)日：2012-04-26

申请号：US13152738

申请日：2011-06-03

申请人： Hongseok CHOI ,  Chang Wook Han ,  SungJoon Bae ,  HeeSuk Pang ,  MinSu Kim ,  HwaKyung Kim

发明人： Hongseok CHOI ,  Chang Wook Han ,  SungJoon Bae ,  HeeSuk Pang ,  MinSu Kim ,  HwaKyung Kim

IPC分类号： H01L51/54

CPC分类号： H01L27/3258 ,  H01L27/3213

摘要： The present invention further relates to an OLED device, including R, G, B, and W subpixels. Specifically, the OLED device comprises a substrate; a thin film transistor (TFT) active layer disposed on the substrate, comprising a gate electrode, a gate insulating layer, an active layer, an interlayer insulating layer, a source electrode, and a drain electrode; an overcoat layer disposed over the thin film transistor; and a passivation layer disposed between the thin film transistor and the overcoat layer, wherein the passivation layer is absent in a path of a light or wherein the passivation layer is disposed in the path of the light as a single layer comprising silicon nitride.

摘要翻译： 本发明还涉及一种包括R，G，B和W子像素的OLED器件。 具体地，OLED器件包括衬底; 设置在所述基板上的薄膜晶体管（TFT）有源层，包括栅电极，栅绝缘层，有源层，层间绝缘层，源电极和漏电极; 设置在所述薄膜晶体管上的外涂层; 以及设置在薄膜晶体管和外涂层之间的钝化层，其中钝化层在光路中不存在，或者其中钝化层设置在作为包含氮化硅的单层的光的路径中。

公开(公告)号：US07928651B2

公开(公告)日：2011-04-19

申请号：US11169751

申请日：2005-06-30

申请人： Chang Wook Han ,  Jae Yong Park ,  Hee Suk Pang

发明人： Chang Wook Han ,  Jae Yong Park ,  Hee Suk Pang

IPC分类号： H05B33/00

CPC分类号： H01L51/5284 ,  H01L27/3244 ,  H01L2251/5315

摘要： An organic electro luminescence device is provided. First and second substrates are arranged to face each other. A thin film transistor (TFT) is formed on the first substrate in each sub-pixel. A first electrode is formed on the first substrate and connected to the TFT. An organic electro luminescent layer and a second electrode are formed on the first electrode. A black matrix is disposed below the first electrode.

摘要翻译： 提供有机电致发光器件。 第一和第二基板被布置为彼此面对。 在每个子像素中的第一衬底上形成薄膜晶体管（TFT）。 第一电极形成在第一基板上并连接到TFT。 在第一电极上形成有机电致发光层和第二电极。 黑色矩阵设置在第一电极下方。

公开(公告)号：US07145627B2

公开(公告)日：2006-12-05

申请号：US11004986

申请日：2004-12-07

申请人： Jae Kyun Lee ,  Chang Wook Han

发明人： Jae Kyun Lee ,  Chang Wook Han

IPC分类号： G02F1/1368 ,  G02F1/139

CPC分类号： G02F1/134363 ,  G02F2001/134381

摘要： A liquid crystal display device according to the present invention comprises first and second substrates, a gate bus line and a transparent data bus line defining unit pixel region, a common line parallel to a gate bus line in the pixel region, a TFT at a crossing of a data bus line and the gate bus lines in the pixel region, a common electrode and a storage capacitor line in the pixel region, a gate insulator having holes on the gate bus line, the common electrode, and the storage capacitor lines, a passivation layer having holes on the gate insulator, a first alignment layer with a fixed alignment direction on the passivation layer, and a liquid crystal layer between the first and second substrates.

摘要翻译： 根据本发明的液晶显示装置包括第一和第二基板，栅极总线和限定单位像素区域的透明数据总线线路，与像素区域中的栅极总线平行的公共线，跨越的TFT 像素区域中的数据总线和栅极总线，像素区域中的公共电极和辅助电容线，在栅极总线，公共电极和辅助电容线上具有孔的栅极绝缘体， 在栅极绝缘体上具有孔的钝化层，在钝化层上具有固定取向方向的第一取向层，以及在第一和第二基板之间的液晶层。

公开(公告)号：US08735870B2

公开(公告)日：2014-05-27

申请号：US11644243

申请日：2006-12-22

申请人： Chang Wook Han ,  Jae Yoon Lee

发明人： Chang Wook Han ,  Jae Yoon Lee

IPC分类号： H01L29/08

CPC分类号： H01L51/0512 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

摘要翻译： 公开了一种有机薄膜晶体管及其制造方法，其可以通过降低在有机半导体层和源极/漏极之间的接触区域中发生的接触电阻来提高器件性能。 有机薄膜晶体管包括形成在基板上的栅极电极，形成在栅电极上的栅极绝缘层，与栅极电极的两个边缘重叠并形成在栅极绝缘层上的源极和漏极电极，形成在栅极绝缘层上的有机半导体层 包括源极/漏极的栅极绝缘层，在栅极绝缘层和源极/漏极之间形成的具有亲水性的第一粘合剂层和在有机半导体层和栅极绝缘层之间形成的具有疏水性的第二粘合剂层 。

公开(公告)号：US08680525B2

公开(公告)日：2014-03-25

申请号：US11961894

申请日：2007-12-20

申请人： Chang Wook Han

发明人： Chang Wook Han

IPC分类号： H01L29/04

CPC分类号： H01L29/66765 ,  H01L29/4908

摘要： A method for manufacturing a thin film transistor is provided. In the method, a gate electrode is formed on a substrate. A crystalline gate insulating layer is formed on an entire surface of the substrate having the gate electrode formed thereon. A microcrystalline silicon layer and a doped amorphous silicon layer are sequentially formed on the crystalline gate insulating layer. A metal layer is deposited on the substrate including the crystalline gate insulating layer, the microcrystalline silicon layer and the doped amorphous silicon layer. Source and drain electrodes, an ohmic contact layer and an active layer are formed by etching predetermined portions of the metal layer and the doped amorphous silicon layer to expose a predetermined portion of the microcrystalline silicon layer.

摘要翻译： 提供了制造薄膜晶体管的方法。 在该方法中，在基板上形成栅电极。 在其上形成有栅电极的基板的整个表面上形成晶体栅极绝缘层。 在晶体栅极绝缘层上依次形成微晶硅层和掺杂非晶硅层。 在包括晶体栅极绝缘层，微晶硅层和掺杂非晶硅层的衬底上沉积金属层。 通过蚀刻金属层和掺杂非晶硅层的预定部分以暴露微晶硅层的预定部分，形成源极和漏极，欧姆接触层和有源层。