公开(公告)号：US20120155247A1

公开(公告)日：2012-06-21

申请号：US13401431

申请日：2012-02-21

申请人： Changtai Li ,  Dong Yang ,  Guangyu Sun

发明人： Changtai Li ,  Dong Yang ,  Guangyu Sun

IPC分类号： H04L12/24

CPC分类号： H04L45/28 ,  H04L45/00 ,  H04L45/22

摘要： Embodiments of the present disclosure disclose a method and an apparatus for protecting a subscriber access network, and relate to the field of communications. The method includes: connecting a Broadband Network Gateway BNG device and N predetermined Digital Subscriber Line Access Multiplexers DSLAMs to an aggregation device AGG; allocating an active BNG interface for each of the N DSLAMs, allocating a standby BNG interface set for the N DSLAMs to obtain a backup relationship, and sending the backup relationship to the AGG (102); and backing up subscriber data on the DSLAMs to the standby BNG interface set, so that when an active BNG interface fails, the AGG switches subscribers on a DSLAM served by the failed active BNG interface to a standby BNG interface in the standby BNG interface set.

摘要翻译： 本公开的实施例公开了一种用于保护用户接入网络并涉及通信领域的方法和装置。 该方法包括：将宽带网络网关BNG设备和N个预定数字用户线接入多路复用器DSLAM连接到聚合设备AGG; 为N个DSLAM中的每一个分配活动BNG接口，为N个DSLAM分配备用BNG接口集以获得备份关系，并将备份关系发送到AGG（102）; 并将DSLAM上的用户数据备份到备用BNG接口组，以便当活动BNG接口出现故障时，AGG将由故障活动BNG接口服务的DSLAM上的用户切换到备用BNG接口组中的备用BNG接口。

公开(公告)号：US08614943B2

公开(公告)日：2013-12-24

申请号：US13401431

申请日：2012-02-21

申请人： Changtai Li ,  Dong Yang ,  Guangyu Sun

发明人： Changtai Li ,  Dong Yang ,  Guangyu Sun

IPC分类号： G01R31/08

CPC分类号： H04L45/28 ,  H04L45/00 ,  H04L45/22

摘要： Embodiments of the present disclosure disclose a method and an apparatus for protecting a subscriber access network, and relate to the field of communications. The method includes: connecting a Broadband Network Gateway BNG device and N predetermined Digital Subscriber Line Access Multiplexers DSLAMs to an aggregation device AGG; allocating an active BNG interface for each of the N DSLAMs, allocating a standby BNG interface set for the N DSLAMs to obtain a backup relationship, and sending the backup relationship to the AGG (102); and backing up subscriber data on the DSLAMs to the standby BNG interface set, so that when an active BNG interface fails, the AGG switches subscribers on a DSLAM served by the failed active BNG interface to a standby BNG interface in the standby BNG interface set.

摘要翻译： 本公开的实施例公开了一种用于保护用户接入网络并涉及通信领域的方法和装置。 该方法包括：将宽带网络网关BNG设备和N个预定数字用户线接入多路复用器DSLAM连接到聚合设备AGG; 为N个DSLAM中的每一个分配活动BNG接口，为N个DSLAM分配备用BNG接口集以获得备份关系，并将备份关系发送到AGG（102）; 并将DSLAM上的用户数据备份到备用BNG接口组，以便当活动BNG接口出现故障时，AGG将由故障活动BNG接口服务的DSLAM上的用户切换到备用BNG接口组中的备用BNG接口。

公开(公告)号：US09178386B2

公开(公告)日：2015-11-03

申请号：US13497512

申请日：2009-12-09

申请人： Gang Duan ,  Jingtao Wu ,  Xiaoyan Sun ,  Dong Yang

发明人： Gang Duan ,  Jingtao Wu ,  Xiaoyan Sun ,  Dong Yang

IPC分类号： H02J13/00 ,  G01R19/25

CPC分类号： H02J13/0006 ,  G01R19/2513 ,  Y02E60/728 ,  Y02E60/74 ,  Y04S10/265 ,  Y04S10/30

摘要： A state-matrix-independent dynamic process estimation method in real-time for weakly observable measurement nodes without Phasor Measurement Unit(PMU) is only dependent on real-time measurement dynamic data of measurement nodes with PMU and measurement data of Supervisory Control And Data Acquisition (SCADA) system in electric power system or state estimation data. According to the SCADA measurement data or state estimation data at some continuous moments, the method utilizes recursive least squares solution to find a linear combination relationship between variation of measurement parameter to be estimated of nodes without PMU and variation of corresponding measurement parameter of nodes with PMU. Using the linear combination of relationship, the dynamic process of measurement nodes without PMU is estimated in real-time. The method provides high estimation precision and meets error requirements of engineering application.

摘要翻译： 弱相关测量单元（PMU）的弱观测测量节点的状态矩无关动态过程估计方法仅取决于PMU测量节点与监控和数据采集测量数据的实时测量动态数据 （SCADA）系统或状态估计数据。 根据SCADA测量数据或某些连续时刻的状态估计数据，该方法利用递归最小二乘解求解PMU节点测量参数变化与PMU节点对应测量参数变化之间的线性组合关系 。 使用线性关系的组合，实时估计无PMU的测量节点的动态过程。 该方法提供高估计精度，满足工程应用的误差要求。

公开(公告)号：US08976925B2

公开(公告)日：2015-03-10

申请号：US12618357

申请日：2009-11-13

申请人： Ruola Ning ,  Dong Yang

发明人： Ruola Ning ,  Dong Yang

IPC分类号： A61B6/03 ,  G06T11/00 ,  A61B6/04 ,  A61B6/00 ,  A61B6/02

CPC分类号： G06T11/006 ,  A61B6/027 ,  A61B6/032 ,  A61B6/0435 ,  A61B6/502 ,  Y10S378/901

摘要： A cone-beam scanning system scans along a half circle. The reconstruction uses a weighting function which decreases for rows farther from the scan plane to take the redundancy of the projection data into account. Another embodiment uses a circle plus sparse helical scan geometry. Image data can be taken in real time.

摘要翻译： 锥形束扫描系统沿半圆扫描。 重建使用对于距离扫描平面更远的行减小的加权函数来考虑投影数据的冗余度。 另一个实施例使用圆加稀疏螺旋扫描几何。 图像数据可以实时拍摄。

公开(公告)号：US08877594B2

公开(公告)日：2014-11-04

申请号：US13509170

申请日：2011-11-30

申请人： Ru Huang ,  Fei Tan ,  Xia An ,  Qianqian Huang ,  Dong Yang ,  Xing Zhang

发明人： Ru Huang ,  Fei Tan ,  Xia An ,  Qianqian Huang ,  Dong Yang ,  Xing Zhang

IPC分类号： H01L21/00 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/6653 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/7833

摘要： A CMOS device for reducing a radiation-induced charge collection and a method for fabricating the same. In the CMOS device, a heavily doped charge collection-suppressed region is disposed directly under the source region and the drain region. The region has a doping type opposite that of the source region and the drain region, and has a doping concentration not less than that of the source region and the drain region. The charge collection-suppressed region has a lateral part slightly less than or equal to that of the source region and the drain region, and has a lateral range toward to the channel not exceed the edges of the source region and the drain region. The CMOS device may greatly reduce a range of the funnel that appears under the action of a single particle, so that charges collected instantaneously under a force of an electric field may be reduced.

摘要翻译： 用于减少辐射诱导的电荷收集的CMOS器件及其制造方法。 在CMOS器件中，重掺杂电荷收集抑制区域直接设置在源极区域和漏极区域的正下方。 该区域具有与源极区域和漏极区域相反的掺杂类型，并且具有不小于源极区域和漏极区域的掺杂浓度。 电荷收集抑制区域具有稍小于或等于源极区域和漏极区域的横向部分，并且具有朝向沟道的横向范围不超过源极区域和漏极区域的边缘。 CMOS器件可以大大减少在单个粒子的作用下出现的漏斗的范围，使得可以在电场的力作用下立即收集的电荷减少。

公开(公告)号：US08705828B2

公开(公告)日：2014-04-22

申请号：US13222461

申请日：2011-08-31

申请人： Dong Yang ,  Nathan J. Packard

发明人： Dong Yang ,  Nathan J. Packard

IPC分类号： G06K9/00 ,  A61B6/00

CPC分类号： G06T11/005 ,  A61B6/032 ,  A61B6/4085 ,  A61B6/466

摘要： Embodiments of methods and/or apparatus for 3-D volume image reconstruction of a subject, executed at least in part on a computer for use with a digital radiographic apparatus can obtain image data for 2-D projection images over a range of scan angles. For each of the plurality of projection images, an enhanced projection image can be generated. In one embodiment, through the application of a resolution increasing interpolator, a prescribed CBCT routine scanning mode with preset binning can increase a spatial resolution, Nyquist frequency or MTF.

摘要翻译： 至少部分地在与数字放射线照相设备一起使用的计算机上执行的被摄体的3-D体积图像重建的方法和/或设备的实施例可以在扫描角度范围内获得用于2-D投影图像的图像数据。 对于多个投影图像中的每一个，可以生成增强的投影图像。 在一个实施例中，通过应用分辨率增加内插器，具有预定分档的规定CBCT例程扫描模式可以增加空间分辨率奈奎斯特频率或MTF。

公开(公告)号：US08652929B2

公开(公告)日：2014-02-18

申请号：US13582034

申请日：2012-04-16

申请人： Ru Huang ,  Fei Tan ,  Xia An ,  Qianqian Huang ,  Dong Yang ,  Xing Zhang

发明人： Ru Huang ,  Fei Tan ,  Xia An ,  Qianqian Huang ,  Dong Yang ,  Xing Zhang

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/3063 ,  H01L21/84

CPC分类号： H01L21/02203 ,  H01L21/02216 ,  H01L21/3063 ,  H01L21/823878 ,  H01L27/0921

摘要： The present invention discloses a CMOS device of reducing charge sharing effect and a fabrication method thereof. The present invention has an additional isolation for trapping carriers disposed right below an isolation region. the material of the additional isolation region is porous silicon. Since porous silicon is a functional material of spongy structure by electrochemistry anodic oxidizing monocrystalline silicon wafer, there are a large number of microvoids and dangling bonds on the surface layer of the porous silicon. These defects may form defect states in a center of forbidden band of the porous silicon, the defect states may trap carriers so as to cause an increased resistance. And with an increase of density of corrosion current, porosity increases, and defects in the porous silicon increase. The present invention can reduce the charge sharing effect due to heavy ions by using a feature that the defect states in the porous silicon trap carriers, the formation of a shallow trench isolation (STI) region and a isolation region underneath only needs one time photolithography, and the process is simple, so that radioresistance performance of an integrated circuit may be greatly increased.

摘要翻译： 本发明公开了一种降低电荷共享效应的CMOS器件及其制造方法。 本发明对于设置在隔离区域正下方的捕获载体具有额外的隔离。 附加隔离区的材料是多孔硅。 由于多孔硅是通过电化学阳极氧化单晶硅晶片的海绵结构的功能材料，因此在多孔硅的表面层上存在大量微孔和悬挂键。 这些缺陷可能在多孔硅的禁带的中心形成缺陷状态，缺陷状态可能会捕获载体以引起增加的电阻。 随着腐蚀电流密度的增加，孔隙率增加，多孔硅中的缺陷增加。 本发明可以通过使用多孔硅捕集载体中的缺陷状态，浅沟槽隔离（STI）区域的形成和下面的隔离区域仅需要一次光刻来降低由于重离子引起的电荷共享效应， 并且该工艺简单，从而可以大大提高集成电路的射电阻性能。

公开(公告)号：US20130259193A1

公开(公告)日：2013-10-03

申请号：US13438079

申请日：2012-04-03

申请人： Nathan J. Packard ,  Samuel Richard ,  Dong Yang

发明人： Nathan J. Packard ,  Samuel Richard ,  Dong Yang

IPC分类号： A61B6/04

CPC分类号： A61B6/025 ,  A61B6/0414 ,  A61B6/502

摘要： An apparatus for imaging a breast of a patient has a gantry with a radiation source and a sensor, the source and sensor rotatable in an arcuate orbit about a central axis and within a plane of revolution, wherein the arcuate orbit spans more than 180 degrees and less than 360 degrees, and wherein the gantry has a gantry cover that is disposed to be in contact with at least the chest wall of the patient. The gantry cover has a central opening about the central axis for insertion of the breast that is to be imaged and a peripheral cutout portion that defines the end-points of the arcuate orbit and that provides a space for positioning a portion of the patient's anatomy.

摘要翻译： 用于对患者的乳房进行成像的装置具有具有辐射源和传感器的机架，所述源和传感器可围绕中心轴线且在旋转平面内围绕弧形轨道旋转，其中所述弓形轨道跨越180度以上， 小于360度，并且其中，所述台架具有设置成与至少所述患者的胸壁接触的龙门架盖。 台架盖具有围绕中心轴线的中心开口，用于插入待成像的乳房，以及限定弓形轨道的端点的周边切口部分，并且提供用于定位患者解剖结构的一部分的空间。

公开(公告)号：US20130243099A1

公开(公告)日：2013-09-19

申请号：US13988550

申请日：2010-12-31

申请人： Tao Feng ,  Yanding Zhang ,  Dong Yang

发明人： Tao Feng ,  Yanding Zhang ,  Dong Yang

IPC分类号： H04N7/26

CPC分类号： H04N19/40

摘要： The present invention discloses a method for H264 transcoding with code stream information reuse, characterized in that, before encoding, a frame or field that is decoded from the original code stream is counted, and the current output of the frame or field is marked with the count value; during encoding, the slice type of the current frame or field that is encoded from an encoder is consistent with that of the original code stream; when encoding the code stream information at macroblock level, the code stream information at macroblock level of the original code stream is reused. The present invention increases the encoding speed and enhances the encoding efficiency without losing too much video quality.

摘要翻译： 本发明公开了一种利用码流信息重用的H264代码转换的方法，其特征在于，在编码之前对从原始码流解码的帧或场进行计数，并且将帧或场的当前输出用 计数值 在编码期间，从编码器编码的当前帧或字段的片类型与原始码流的片类型一致; 当在宏块级编码码流信息时，重新使用原始码流的宏块级的码流信息。 本发明增加了编码速度并提高了编码效率，而不会损失太多的视频质量。

公开(公告)号：US20130013245A1

公开(公告)日：2013-01-10

申请号：US13499275

申请日：2011-10-28

申请人： Ru Huang ,  Dong Yang ,  Fei Tan ,  Xia An ,  Xing Zhang

发明人： Ru Huang ,  Dong Yang ,  Fei Tan ,  Xia An ,  Xing Zhang

IPC分类号： G01R31/26 ,  G06F19/00

CPC分类号： G01R31/2621 ,  H01L22/14

摘要： The present invention discloses a method for obtaining a distribution of charges along a channel of a MOS transistor, which is used for obtaining distributions of interface states charges and charges of a gate dielectric layer in the MOS transistor. The method includes: adding a MOS transistor into a test circuit; measuring two charge pumping current curves when a source terminal is open-circuited or when a drain terminal is open-circuited before and after a stress is applied by using a charge pumping current test method, where one of the two charge pumping current curves is an original curve and the other one is an post-stress curve; finding a point B corresponding to a point A on the original curve on the post-stress curve, and estimating amount of locally-generated interface states charges and charges of the gate dielectric layer by a variation of the charge pumping current and a variation in a voltage at a local point. As compared with a conventional method for obtaining a distribution, the method of the present invention can obtain a distribution of charges along a direction form the drain or source terminal to the channel more easily and rapidly, with an aid of a computer. A mass of complicated and repeated tests are reduced. Also, the method can provide an effective base for improving device reliability.

摘要翻译： 本发明公开了一种用于获得沿着MOS晶体管的沟道的电荷分布的方法，用于获得MOS晶体管中的界面态电荷和栅介质层的电荷的分布。 该方法包括：将MOS晶体管添加到测试电路中; 当源极端子开路时，或者在通过使用电荷泵浦电流测试方法施加应力之前和之后漏极端子开路时，测量两个电荷泵浦电流曲线，其中两个电荷泵浦电流曲线之一为 原曲线，另一个是后应力曲线; 找到对应于后应力曲线上的原始曲线上的点A的点B，并且通过电荷泵浦电流的变化和局部产生的界面的变化来估计局部产生的界面状态的电介质层的电荷和电荷 电压在本地点。 与用于获得分布的常规方法相比，本发明的方法可以借助于计算机，更容易和快速地获得沿着从漏极或源极端子到达通道的方向的电荷分布。 大量复杂和重复的测试减少了。 此外，该方法可以提供用于提高装置可靠性的有效基础。