摘要:
The present invention provides multiple test structures for performing reliability and qualification tests on MEMS switch devices. A Test structure for contact and gap characteristic measurements is employed having a serpentine layout simulates rows of upper and lower actuation electrodes. A cascaded switch chain test is used to monitor process defects with large sample sizes. A ring oscillator is used to measure switch speed and switch lifetime. A resistor ladder test structure is configured having each resistor in series with a switch to be tested, and having each switch-resistor pair electrically connected in parallel. Serial/parallel test structures are proposed with MEMS switches working in tandem with switches of established technology. A shift register is used to monitor the open and close state of the MEMS switches. Pull-in voltage, drop-out voltage, activation leakage current, and switch lifetime measurements are performed using the shift register.
摘要:
A system for testing a plurality of transistors on a wafer having a storage device or personal computer connected via a bus to a plurality of drivers. Each of the voltage drivers having a microcontroller adapted to receive test parameters and provide test data from a plurality of voltage drivers. By utilizing a bus structure, the personal computer can look on one bus for flags indicating test data is available from a driver and receive the data. In addition a bus may be used to provide test parameters to the drivers. In this manner, multiple drivers may be run at the same time incorporating multiple tests. When data is available it is transferred to the personal computer, for providing test parameters to a plurality of drivers, and connected via a second bus for receiving test results from the plurality of drivers.
摘要:
A system for testing a plurality of transistors on a wafer having a storage device or personal computer connected via a bus to a plurality of drivers. Each of the voltage drivers having a microcontroller adapted to receive test parameters and provide test data from a plurality of voltage drivers. By utilizing a bus structure, the personal computer can look on one bus for flags indicating test data is available from a driver and receive the data. In addition a bus may be used to provide test parameters to the drivers. In this manner, multiple drivers may be run at the same time incorporating multiple tests. When data is available it is transferred to the personal computer, for providing test parameters to a plurality of drivers, and connected via a second bus for receiving test results from the plurality of drivers.
摘要:
A method for transmitting data from test device to a storage device via a parallel bus. The methods comprising the steps of setting a flag to indicate that data is available, reading the data, setting a flag to indicate the data was read. In addition test parameters are sent to the test device from the storage device, the method comprises the steps of checking to see if a test device is ready to receive data, transferring the test parameters, identifying the next channel to update.
摘要:
A system and method for testing performance characteristics of a MEMs device includes an activation driver configured to receive and drive a waveform to an activation side of the micro electromechanical device and configured to provide readback of an activation voltage and activation current drawn by activation of the micro electromechanical device. A switch driver configured to provide a load to a switch side of the micro electromechanical device provides readback of a load voltage and a load current drawn by the micro electromechanical device. A contact-closure counter and master control card (MCC) is included to control the activation and switch drivers while a digital volt meter (DVM) is in operable communication with the micro electromechanical device to read back analog readback. An analog multiplexer provides the analog readback to a corresponding activation driver or switch driver. A computer having software provides system control, data acquisition, data storage, and data analysis is in operable communication with the multiplexer, DVM and MCC.
摘要:
A test structure for a through-silicon-via (TSV) in a semiconductor chip includes a first contact, the first contact being electrically connected to a first TSV; and a second contact, wherein the first contact, second contact, and the first TSV form a first channel, and a depth of the first TSV is determined based on a resistance of the first channel.
摘要:
An IC interconnect for high direct current (DC) that is substantially immune to electro-migration (EM) damage, and a method of manufacture of the IC interconnect are provided. A structure includes a cluster-of-via structure at an intersection between inter-level wires. The cluster-of-via structure includes a plurality of vias each of which are filled with a metal and lined with a liner material. At least two adjacent of the vias are in contact with one another and the plurality of vias lowers current loading between the inter-level wires.
摘要:
A wafer probing system includes a probe card assembly having a plurality of individual probe structures configured make contact with a semiconductor wafer mounted on a motor driven wafer chuck, with each probe structure configured with a pressure sensing unit integrated therewith; and a controller configured to drive the probe card assembly with one or more piezoelectric driver units response to feedback from the pressure sensing units of the individual probe structures.
摘要:
An electrically programmable fuse includes an anode, a cathode, and a fuse link conductively connecting the cathode with the anode, which is programmable by applying a programming current. The anode and the fuse link each include a polysilicon layer and a silicide layer formed on the polysilicon layer, and the cathode includes the polysilicon layer and a partial silicide layer formed on a predetermined portion of the polysilicon layer of the cathode located adjacent to a cathode junction where the cathode and the fuse link meet.
摘要:
A through-substrate via (TSV) structure includes at least two electrically conductive via segments embedded in a substrate and separated from each other by an electrically conductive barrier layer therebetween. The length of each individual conductive via segment is typically equal to, or less than, the Blech length of the conductive material so that the stress-induced back flow force, generated by each conductive barrier layer, cancels the electromigration force in each conductive via segment. Consequently, the TSV structures are immune to electromigration, and provide reliable electrical connections among a chips stacked in 3 dimensions.