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    Method of forming an interconnection structure in a organosilicate glass having a porous layer with higher carbon content located between two lower carbon content non-porous layers
    6.
    发明授权
    Method of forming an interconnection structure in a organosilicate glass having a porous layer with higher carbon content located between two lower carbon content non-porous layers 失效
    在具有位于两个低碳含量无孔层之间的具有较高碳含量的多孔层的有机硅酸盐玻璃中形成互连结构的方法

    公开(公告)号：US07767587B2

    公开(公告)日：2010-08-03

    申请号：US12034692

    申请日：2008-02-21

    申请人： Nicholas C. M. Fuller ,  Timothy J. Dalton

    发明人： Nicholas C. M. Fuller ,  Timothy J. Dalton

    IPC分类号： H01L21/28 ,  H01L21/47

    CPC分类号： H01L21/76835 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Interconnect structures possessing a non-porous (dense) low-k organosilicate glass (OSG) film utilizing a porous low-k OSG film as an etch stop layer or a porous low-k OSG film using a non-porous OSG film as a hardmask for use in semiconductor devices are provided herein. The novel interconnect structures are capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed and also because of the relatively uniform line heights made feasible by these unique and seemingly counterintuitive features. The present invention also provides a fluorocarbon-based dual damascene etch process that achieves selective etching of a dense low-k OSG films relative to that of a porous low-k OSG film owing to the tunability of the gas-phase fluorine:carbon ratio (gas dissociation) and ion current below a critical threshold and given the larger carbon content of the porous film relative to that of the dense film.

    摘要翻译： 具有使用多孔低k OSG膜作为蚀刻停止层的无孔（致密）低k有机硅酸盐玻璃（OSG）膜的互连结构或使用无孔OSG膜作为硬掩模的多孔低k OSG膜 用于半导体器件中。 新颖的互连结构能够提供改进的器件性能，功能和可靠性，这是由于与传统采用的叠层相比，堆叠的有效介电常数降低，并且还因为这些独特且看似违反直觉的特征使得线的高度相对均匀 。 本发明还提供了一种基于碳氟化合物的双镶嵌蚀刻工艺，由于气相氟：碳比的可调性，实现了相对于多孔低k OSG膜的致密低k OSG膜的选择性蚀刻（ 气体离解）和离子电流低于临界阈值，并且给出多孔膜相对于致密膜的碳含量较大。

    De-fluorination of wafer surface and related structure
    8.
    发明授权
    De-fluorination of wafer surface and related structure 有权
    晶圆表面脱氟及相关结构

    公开(公告)号：US07049209B1

    公开(公告)日：2006-05-23

    申请号：US10907463

    申请日：2005-04-01

    申请人： Timothy J. Dalton ,  Nicholas C. M. Fuller ,  Kaushik A. Kumar ,  Catherine Labelle

    发明人： Timothy J. Dalton ,  Nicholas C. M. Fuller ,  Kaushik A. Kumar ,  Catherine Labelle

    IPC分类号： H01L21/322

    CPC分类号： H01L21/31138 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76814

    摘要： Methods of de-fluorinating a wafer surface after damascene processing and prior to photoresist removal are disclosed, as is a related structure. In one embodiment, the method places the wafer surface in a chamber and exposes the wafer surface to a plasma from a source gas including at least one of nitrogen (N2) and/or hydrogen (H2) at a low power density or ion density. The exposing step removes the chemisorbed and physisorbed fluorine residue present on the wafer surface (and chamber), and improves ultra low dielectric (ULK) interconnect structure robustness and integrity. The exposing step is operative due to the efficacy of hydrogen and nitrogen radicals at removing fluorine-based species and also due to the presence of a minimal amount of ion energy in the plasma. The low power density nitrogen and/or hydrogen-containing plasma process enables negligible ash/adhesion promoter interaction and reduces integration complexity during dual damascene processing of low-k OSG-based materials.

    摘要翻译： 公开了在镶嵌处理之后和光致抗蚀剂去除之前脱晶晶片表面的方法，如相关结构。 在一个实施例中，该方法将晶片表面放置在室中并将晶片表面暴露于来自包括氮（N 2 H 2）和/或氢（H 2 ）。 曝光步骤去除晶片表面（和室）上存在的化学吸附和物理吸附的氟残基，并改善超低介电（ULK）互连结构的鲁棒性和完整性。 曝光步骤由于氢和氮自由基在除去氟基物质的作用以及由于在等离子体中存在最少量的离子能量而有效。 低功率密度氮和/或含氢等离子体方法使得可以忽略灰分/粘附促进剂相互作用，并降低在低k OSG基材料的双镶嵌加工过程中的集成复杂性。

    High ion energy and reative species partial pressure plasma ash process
    9.
    发明授权
    High ion energy and reative species partial pressure plasma ash process 有权
    高离子能量和反应物质分压等离子体灰分过程

    公开(公告)号：US07253116B2

    公开(公告)日：2007-08-07

    申请号：US10904608

    申请日：2004-11-18

    申请人： Nicholas C. M. Fuller ,  Timothy J. Dalton

    发明人： Nicholas C. M. Fuller ,  Timothy J. Dalton

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/76802 ,  G03F7/427 ,  H01L21/31138

    摘要： A high ion energy and high pressure O2/CO-based plasma for ashing field photoresist material subsequent to via-level damascene processing. The optimized plasma ashing process is performed at greater than approximately 300 mT pressure and ion energy greater than approximately 500 W conditions with an oxygen partial pressure of greater than approximately 85%. The rapid ash rate of the high pressure/high ion energy process and minimal dissociation conditions (no “source” power is applied) allow minimal interaction between the interlevel dielectric and ash chemistry to achieve minimal overall sidewall modification of less than approximately 5 nm.

    摘要翻译： 用于经过层级镶嵌处理之后灰化场致光材料的高离子能量和高压O 2 2 / CO基等离子体。 优化的等离子体灰化过程在大于约300mT的压力下进行，离子能量大于约500W条件，氧分压大于约85％。 高压/高离子能量过程的快速灰分速率和最小解离条件（不施加“源”功率）允许层间电介质和灰分化学之间的最小相互作用，以实现小于约5nm的最小总体侧壁修饰。

    Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics
    10.
    发明授权
    Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics 有权
    多层硬掩模方案，用于SiCOH电介质的无损双重镶嵌加工

    公开(公告)号：US07811926B2

    公开(公告)日：2010-10-12

    申请号：US12198602

    申请日：2008-08-26

    申请人： Nicholas C. M. Fuller ,  Stephen McConnell Gates ,  Timothy J. Dalton

    发明人： Nicholas C. M. Fuller ,  Stephen McConnell Gates ,  Timothy J. Dalton

    IPC分类号： H01L21/00

    CPC分类号： H01L21/0331 ,  H01L21/76811 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/31667 ,  H01L2924/00

    摘要： Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.

    摘要翻译： 具有用于90nm以上的有机硅酸盐玻璃基材料的互连结构，其中描述了使用线路优先方法的多层硬掩模的BEOL技术。 本发明的互连结构实现了相应的改进的器件/互连性能，并且由于不暴露OSG材料以抵抗去除等离子体以及由于交替的无机/有机多层硬掩模堆叠而提供了实质的双镶嵌工艺窗口。 后一特征意味着对于在特定蚀刻步骤期间被蚀刻的每个无机层，该领域中相应的图案转移层是有机的，反之亦然。