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    Novel structure and method to fabricate high performance MTJ devices for MRAM applications
    1.
    发明申请
    Novel structure and method to fabricate high performance MTJ devices for MRAM applications 失效
    用于制造用于MRAM应用的高性能MTJ器件的新型结构和方法

    公开(公告)号：US20060208296A1

    公开(公告)日：2006-09-21

    申请号：US11080860

    申请日：2005-03-15

    申请人： Cheng Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    发明人： Cheng Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    IPC分类号： H01L29/94

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  H01L43/12

    摘要： A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2. The MTJ configuraton is extendable to a 0.2×0.4 micron MTJ bit size.

    摘要翻译： 公开了一种MRAM阵列中的高性能MTJ，其中底部导体具有无定形Ta覆盖层。 关键特征是由在Ta表面上形成的氧构成的表面活性剂层。 得到的平滑且平坦的Ta覆盖层促进MTJ层中平滑且平坦的表面，随后在表面活性剂层上形成。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。 MTJ配置可扩展到0.2x0.4微米的MTJ位大小。

    Novel structure and method to fabricate high performance MTJ devices for MRAM applications
    2.
    发明申请
    Novel structure and method to fabricate high performance MTJ devices for MRAM applications 失效
    用于制造用于MRAM应用的高性能MTJ器件的新型结构和方法

    公开(公告)号：US20060211198A1

    公开(公告)日：2006-09-21

    申请号：US11080868

    申请日：2005-03-15

    申请人： Cheng Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    发明人： Cheng Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    IPC分类号： H01L21/336

    CPC分类号： H01L43/12

    摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.

    摘要翻译： 公开了一种在MRAM阵列中形成高性能MTJ的方法。 溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。 一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。 所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层得到大于40％的dR / R和约4000欧姆 - 姆2的RA。

    Structure and method to fabricate high performance MTJ devices for MRAM applications
    3.
    发明授权
    Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
    制造用于MRAM应用的高性能MTJ器件的结构和方法

    公开(公告)号：US07211447B2

    公开(公告)日：2007-05-01

    申请号：US11080868

    申请日：2005-03-15

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12

    摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.

    摘要翻译： 公开了一种在MRAM阵列中形成高性能MTJ的方法。 溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。 一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。 所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。

    Structure and method to fabricate high performance MTJ devices for MRAM applications
    4.
    发明授权
    Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
    制造用于MRAM应用的高性能MTJ器件的结构和方法

    公开(公告)号：US07208807B2

    公开(公告)日：2007-04-24

    申请号：US11080860

    申请日：2005-03-15

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  H01L43/12

    摘要： A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2. The MTJ configuraton is extendable to a 0.2×0.4 micron MTJ bit size.

    摘要翻译： 公开了一种MRAM阵列中的高性能MTJ，其中底部导体具有无定形Ta覆盖层。 关键特征是由在Ta表面上形成的氧构成的表面活性剂层。 得到的平滑且平坦的Ta覆盖层促进MTJ层中平滑且平坦的表面，随后在表面活性剂层上形成。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。 MTJ配置可扩展到0.2x0.4微米的MTJ位大小。

    Novel capping structure for enhancing dR/R of the MTJ device
    5.
    发明申请
    Novel capping structure for enhancing dR/R of the MTJ device 失效
    用于增强MTJ装置的dR / R的新型封盖结构

    公开(公告)号：US20050276099A1

    公开(公告)日：2005-12-15

    申请号：US10868715

    申请日：2004-06-15

    申请人： Cheng Horng ,  Ru-Ying Tong ,  Liubo Hong ,  Min Li

    发明人： Cheng Horng ,  Ru-Ying Tong ,  Liubo Hong ,  Min Li

    IPC分类号： G11B5/39 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L29/04

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/10 ,  H01L43/12

    摘要： An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that contacts a top conductor. The composite capping layer is especially useful with a moderate spin polarization free layer such as a NiFe layer with a Fe content of about 17.5 to 20 atomic %. The capping layer preferably has a Ru/Ta/Ru configuration in which the lower Ru layer is about 10 to 30 Angstroms thick and the Ta layer is about 30 Angstroms thick. As a result, a high dR/R of about 40% is achieved with low magnetostriction less than about 1.0 E-6 in an MTJ in an MRAM array. Best results are obtained with an AlOx tunnel barrier layer formed by an in-situ ROX process on an 8 to 10 Angstrom thick Al layer.

    摘要翻译： MRAM阵列或TMR读取头中的MTJ由具有较低的互扩散阻挡层的覆盖层，中间氧吸气层和接触顶部导体的上部金属层组成。 复合覆盖层特别适用于中等自旋极化自由层，例如Fe含量约为17.5至20原子％的NiFe层。 封端层优选具有Ru / Ta / Ru构型，其中下Ru层的厚度约为10至30埃，Ta层约为30埃厚。 结果，在MRAM阵列的MTJ中，具有约40％的高dR / R达到小于约1.0E-6的低磁致伸缩。 通过在8至10埃厚的Al层上通过原位ROX工艺形成的AlOx隧道势垒层获得最佳结果。