公开(公告)号：US20080157056A1

公开(公告)日：2008-07-03

申请号：US11819169

申请日：2007-06-26

申请人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Wen-Yu Shiao ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang

发明人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Wen-Yu Shiao ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/26 ,  H01L33/08 ,  H01L33/16

摘要： A producing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof includes growing and processing a multiple-quantum-well layer based on stacking the mixture of at least two kinds of quantum wells to produce a two-wavelength light-emitting diode. Then, attaching nano-crystals on the two-wavelength light-emitting diode to transfer one of the wavelengths of the two-wavelength light-emitting diode to produce a poly-wavelength light-emitting diode. The device of the present invention can emit blue, green and red lights to produce white light.

摘要翻译： 利用纳米晶体的多波长发光二极管的制造方法及其发光装置包括：通过堆叠至少两种量子阱的混合物来生长和处理多量子阱层，以产生 双波长发光二极管。 然后，将纳米晶体附着在双波长发光二极管上，以传输双波长发光二极管的波长之一，以产生多波长发光二极管。 本发明的装置可以发出蓝色，绿色和红色的光以产生白光。

公开(公告)号：US07875478B2

公开(公告)日：2011-01-25

申请号：US11819175

申请日：2007-06-26

申请人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

发明人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

IPC分类号： H01L21/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

摘要翻译： 公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。 本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此 控制由LED发射的多个波长的相对强度比。 通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。

公开(公告)号：US20080035909A1

公开(公告)日：2008-02-14

申请号：US11819175

申请日：2007-06-26

申请人： Chih-Feng Lu ,  Horng-Shyang Chen ,  Dong-Ming Yeh ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

发明人： Chih-Feng Lu ,  Horng-Shyang Chen ,  Dong-Ming Yeh ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

IPC分类号： H01L31/024 ,  H01L21/22 ,  H01L21/302

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

摘要翻译： 公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。 本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此 控制由LED发射的多个波长的相对强度比。 通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。

公开(公告)号：US20080124827A1

公开(公告)日：2008-05-29

申请号：US11819520

申请日：2007-06-28

申请人： Chi-Feng Huang ,  Tsung-Yi Tang ,  Jeng-Jie Huang ,  Wen-Yu Shiao ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Jian-Jang Huang ,  Chih-Chung Yang

发明人： Chi-Feng Huang ,  Tsung-Yi Tang ,  Jeng-Jie Huang ,  Wen-Yu Shiao ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Jian-Jang Huang ,  Chih-Chung Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32

摘要： A method and structure for manufacturing long-wavelength visible light-emitting diode (LED) using the prestrained growth effect comprises the following steps: Growing a strained low-indium-content InGaN layer on the N-type GaN layer, and then growing a high-indium-content InGaN/GaN single- or multiple-quantum-well light-emitting structure on the low-indium-content InGaN layer to enhance the indium content of the high-indium quantum wells and hence to elongate the emission wavelength of the LED. The method of the invention can elongate emission wavelength of the LED by more than 50 nm (nanometer) such that an originally designated green LED can emit red light or orange light without influencing other electrical properties.

摘要翻译： 使用预制生长效应制造长波长可见发光二极管（LED）的方法和结构包括以下步骤：在N型GaN层上生长应变低铟含量InGaN层，然后生长高 在铟含量低的InGaN层上的InGaN / GaN单或多量子阱发光结构，以增强高铟量子阱的铟含量，从而延长LED的发射波长 。 本发明的方法可以使LED的发射波长可以超过50nm（纳米），使得原始指定的绿色LED可以发射红光或橙光而不影响其他电性能。

公开(公告)号：US20130256650A1

公开(公告)日：2013-10-03

申请号：US13481856

申请日：2012-05-27

申请人： Chih-Chung Yang ,  Horng-Shyang Chen ,  Shao-Ying Ting ,  Che-Hao Liao ,  Chih-Yen Chen ,  Chieh Hsieh ,  Hao-Tsung Chen ,  Yu-Feng Yao ,  Dong-Ming Yeh

发明人： Chih-Chung Yang ,  Horng-Shyang Chen ,  Shao-Ying Ting ,  Che-Hao Liao ,  Chih-Yen Chen ,  Chieh Hsieh ,  Hao-Tsung Chen ,  Yu-Feng Yao ,  Dong-Ming Yeh

IPC分类号： H01L33/28 ,  H01L33/34 ,  H01L33/32 ,  H01L33/26

CPC分类号： H01L33/025 ,  H01L33/22 ,  H01L33/382 ,  H01L2933/0091

摘要： A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits.

摘要翻译： 提供了半导体器件及其制造方法，其中半导体器件的制造方法包括以下步骤。 在基板上形成半导体层，其中半导体层具有与顶表面相对的顶表面和底表面。 底表面与基底接触，并且顶表面具有多个凹坑，凹坑从顶表面向底表面延伸。 制备溶液，其中溶液包括多个纳米颗粒。 将纳米颗粒填充到凹坑中。 在将纳米颗粒填充到凹坑中之后，在半导体层上形成导电层。

公开(公告)号：US08759814B2

公开(公告)日：2014-06-24

申请号：US13615548

申请日：2012-09-13

申请人： Chih-Chung Yang ,  Che-Hao Liao ,  Shao-Ying Ting ,  Horng-Shyang Chen ,  Wen-Ming Chang ,  Yu-Feng Yao ,  Chih-Yen Chen ,  Hao-Tsung Chen

发明人： Chih-Chung Yang ,  Che-Hao Liao ,  Shao-Ying Ting ,  Horng-Shyang Chen ,  Wen-Ming Chang ,  Yu-Feng Yao ,  Chih-Yen Chen ,  Hao-Tsung Chen

IPC分类号： H01L31/00

CPC分类号： H01L33/18 ,  H01L33/08 ,  H01L33/24 ,  H01L33/44 ,  H01L33/502

摘要： A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.

摘要翻译： 提供一种半导体发光器件及其制造方法，其中半导体发光器件包括第一掺杂半导体结构，发光层，第二掺杂半导体层，第一导电层和介电层 。 第一类型掺杂半导体结构包括从基底向外延伸的基部和多个列。 每个柱包括顶表面和多个侧壁表面。 发光层设置在侧壁表面和顶表面上，其中发光层的表面积从相邻列的一侧逐渐变为离开立柱的一侧。 电介质层暴露位于每个列的顶表面上的第一导电层，其中介电层包括多个量子点，磷光体和金属纳米颗粒中的至少一个。

公开(公告)号：US20140042387A1

公开(公告)日：2014-02-13

申请号：US13615548

申请日：2012-09-13

申请人： Chih-Chung Yang ,  Che-Hao Liao ,  Shao-Ying Ting ,  Horng-Shyang Chen ,  Wen-Ming Chang ,  Yu-Feng Yao ,  Chih-Yen Chen ,  Hao-Tsung Chen

发明人： Chih-Chung Yang ,  Che-Hao Liao ,  Shao-Ying Ting ,  Horng-Shyang Chen ,  Wen-Ming Chang ,  Yu-Feng Yao ,  Chih-Yen Chen ,  Hao-Tsung Chen

IPC分类号： H01L33/04 ,  H01L33/44

CPC分类号： H01L33/18 ,  H01L33/08 ,  H01L33/24 ,  H01L33/44 ,  H01L33/502

摘要： A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.

摘要翻译： 提供一种半导体发光器件及其制造方法，其中半导体发光器件包括第一掺杂半导体结构，发光层，第二掺杂半导体层，第一导电层和介电层 。 第一类型掺杂半导体结构包括从基底向外延伸的基部和多个列。 每个柱包括顶表面和多个侧壁表面。 发光层设置在侧壁表面和顶表面上，其中发光层的表面积从与列相邻的一侧逐渐变为远离柱的一侧。 电介质层暴露位于每个列的顶表面上的第一导电层，其中介电层包括多个量子点，磷光体和金属纳米颗粒中的至少一个。