摘要:
Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.
摘要:
A non-volatile memory device comprises a memory cell array comprising memory cells arranged in rows connected to corresponding word lines and columns connected to corresponding bit lines, a page buffer that stores a program data, a read-write circuit that programs and re-programs the program data into selected memory cells of the memory cell array and reads stored data from the programmed memory cells, and a control circuit that controls the page buffer and the read-write circuit to program the selected memory cells by loaded the program data from in page buffer and to re-program the selected memory cells by re-loaded the program data in the page buffer.
摘要:
Memory devices and program methods thereof, the memory devices including a memory cell array with a three-dimensional structure, a voltage generator configured to supply a pass voltage and a program voltage to the memory cell array, and a control logic configured to make the rising slope of the pass voltage variable with a program loop during a program operation. The memory device may improve a program speed by adjusting the rising slope of the pass voltage according to the program loop.
摘要:
A nonvolatile memory device comprises a memory cell array comprising a plurality of memory cells, a voltage generator configured to generate voltages to program the plurality of memory cells, and a control logic component configured to control the voltage generator to provide a plurality of program voltages to selected memory cells during successive iterations of a program loop. Wherein where memory cells corresponding to one logic state are judged to be program passed during a current iteration of the program loop, the control logic component controls the voltage generator such that a program voltage corresponding to the one logic state is skipped during subsequent iterations of the program loop.
摘要:
The present invention relates to a power supply device generating an output power by using an AC line voltage generated through rectification of an AC input, and a driving method thereof. The power supply device controls the switching operation of the power switch by using a sensing voltage corresponding to the drain current flowing to the power switch and the feedback voltage corresponding to the output voltage. The power supply device controls the feedback current every switching cycle to generate a threshold voltage, and compares the sensing voltage and the threshold voltage to control the turn-off of the power switch. The feedback current includes the first current to generate the feedback voltage, and the threshold voltage follows a curved line waveform in which the increasing slope is decreased during the switching cycle.
摘要:
A power supply includes an input filter and a discharging device. The input filter includes a capacitor to which an AC power source is provided. The discharging device rectifies and samples the AC power source. The discharging device generates a reference voltage according to a peak voltage of a generated sampling signal, generates an AC power source cutoff detection signal according to a comparison signal generated by comparing the sampling signal and a reference voltage, and discharges the capacitor through a discharging register according to the AC power source cutoff detection signal.