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公开(公告)号:US09196605B2
公开(公告)日:2015-11-24
申请号:US13230988
申请日:2011-09-13
申请人: Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
发明人: Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
CPC分类号: H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: An embodiment of the present application discloses a light-emitting structure, comprising a substrate, a first unit and a second unit separately form on the substrate; a trench formed between the first unit and the second unit, and having a bottom portion exposing the substrate, a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection connecting the first unit and the second unit and covering the first unit, the second unit and the less steep sidewall; wherein the sidewalls directly connect to the bottom portion, and the steeper sidewall is devoid of the electrical connection covering.
摘要翻译: 本申请的一个实施例公开了一种发光结构,其包括基板,第一单元和在基板上分开形成的第二单元; 形成在所述第一单元和所述第二单元之间的沟槽,并且具有暴露所述基板的底部部分,比所述较不陡峭的侧壁更陡峭的侧壁和更陡峭的侧壁; 以及连接第一单元和第二单元并覆盖第一单元,第二单元和较不陡峭侧壁的电连接; 其中所述侧壁直接连接到所述底部部分,并且所述较陡侧壁没有电连接覆盖物。
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公开(公告)号:US08759848B2
公开(公告)日:2014-06-24
申请号:US13545354
申请日:2012-07-10
申请人: Chao-Hsing Chen , Chien-Kai Chung , Hsin-Mao Liu , Chiu-Lin Yao , Chien-Fu Huang
发明人: Chao-Hsing Chen , Chien-Kai Chung , Hsin-Mao Liu , Chiu-Lin Yao , Chien-Fu Huang
IPC分类号: H01L33/08 , H01L25/075 , H01L33/62 , H01L33/38
CPC分类号: H01L25/0753 , H01L25/0756 , H01L33/385 , H01L33/62 , H01L2224/16
摘要: The application provides a light-emitting device, comprising a substrate; a plurality of first light-emitting diode units on the substrate, wherein every first light-emitting diode unit has a first electrode structure; and a plurality of second light-emitting diode units among the plurality of first light-emitting diode units, wherein every second light-emitting diode unit has a second electrode structure. The second electrode structure of the second light-emitting diode unit is flipped over and electrically connected with the adjacent first electrode structure of the first light-emitting diode unit.
摘要翻译: 本发明提供一种发光装置,其包括基板; 多个第一发光二极管单元,其中每个第一发光二极管单元具有第一电极结构; 以及多个第一发光二极管单元中的多个第二发光二极管单元,其中每个第二发光二极管单元具有第二电极结构。 第二发光二极管单元的第二电极结构被翻转并与第一发光二极管单元的相邻的第一电极结构电连接。
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公开(公告)号:US09455242B2
公开(公告)日:2016-09-27
申请号:US13226095
申请日:2011-09-06
申请人: Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人: Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号: H01L31/042 , H01L33/00 , H01L25/075 , H01L31/18 , H01L23/00 , H01L33/44 , H01L33/62
CPC分类号: H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要: A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译: 半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠,包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层,以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。
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公开(公告)号:US20120061694A1
公开(公告)日:2012-03-15
申请号:US13230988
申请日:2011-09-13
申请人: Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
发明人: Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号: H01L33/08
CPC分类号: H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall.
摘要翻译: 本申请的实施例公开了一种发光结构,包括第一单元; 第二单位 形成在所述第一单元和所述第二单元之间的沟槽,并且具有比所述较不陡峭的侧壁更陡峭的侧壁和更陡峭的侧壁; 以及布置在不太陡峭的侧壁上的电连接。
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公开(公告)号:US20120055532A1
公开(公告)日:2012-03-08
申请号:US13226095
申请日:2011-09-06
申请人: Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人: Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号: H01L31/0224 , H01L33/08 , H01L33/42
CPC分类号: H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要: A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译: 半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠,包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层,以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。
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公开(公告)号:US08890178B2
公开(公告)日:2014-11-18
申请号:US13231250
申请日:2011-09-13
申请人: Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
发明人: Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
CPC分类号: H01L27/153 , H01L33/20 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: A light-emitting element includes a monolithic understructure including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on a portion of the first surface and between the plurality of light-emitting structure units, wherein a height of the portion of the first surface is greater than a height of the second surface measured from a bottom of the monolithic understructure, and the portion of the first surface is exposed by the trench.
摘要翻译: 发光元件包括:整体式下结构,包括第一表面和与第一表面不同的第二表面; 设置在所述第二表面上的多个发光结构单元; 以及形成在所述第一表面的一部分上并且在所述多个发光结构单元之间的沟槽,其中所述第一表面的所述部分的高度大于从所述整体式下部结构的底部测量的所述第二表面的高度, 并且第一表面的部分被沟槽暴露。
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公开(公告)号:US08592827B2
公开(公告)日:2013-11-26
申请号:US13225640
申请日:2011-09-06
申请人: Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
发明人: Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号: H01L27/15
CPC分类号: H01L27/15 , H01L27/153 , H01L33/0079 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.
摘要翻译: 发光装置包括:载体; 形成在所述载体上的发光结构,其中所述发光结构具有面向所述载体的第一表面,与所述第一表面相对的第二表面,以及在所述第一表面和所述第二表面之间的有源层; 从所述第一表面延伸并穿过所述有源层的多个第一沟槽,以限定多个发光单元; 以及从所述第二表面延伸并穿过所述多个发光单元中的每一个的有源层的多个第二沟槽。
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公开(公告)号:US20120056212A1
公开(公告)日:2012-03-08
申请号:US13225640
申请日:2011-09-06
申请人: Chien-Fu Huang , Chao-Hsing Chen , Chiu-LIn Yao , Hsin-Mao Liu , Chien-Kai Chung
发明人: Chien-Fu Huang , Chao-Hsing Chen , Chiu-LIn Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号: H01L33/62
CPC分类号: H01L27/15 , H01L27/153 , H01L33/0079 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.
摘要翻译: 发光装置包括:载体; 形成在所述载体上的发光结构,其中所述发光结构具有面向所述载体的第一表面,与所述第一表面相对的第二表面,以及在所述第一表面和所述第二表面之间的有源层; 从所述第一表面延伸并穿过所述有源层的多个第一沟槽,以限定多个发光单元; 以及从所述第二表面延伸并穿过所述多个发光单元中的每一个的有源层的多个第二沟槽。
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公开(公告)号:US20120061667A1
公开(公告)日:2012-03-15
申请号:US13231250
申请日:2011-09-13
申请人: Chein-Fu Huang , Chao-Hsing CHEN , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
发明人: Chein-Fu Huang , Chao-Hsing CHEN , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
CPC分类号: H01L27/153 , H01L33/20 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: A light-emitting element includes: a substrate including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on the first surface and between the plurality of light-emitting structure units.
摘要翻译: 发光元件包括:基板,包括第一表面和与第一表面不同的第二表面; 设置在所述第二表面上的多个发光结构单元; 以及形成在所述第一表面上和所述多个发光结构单元之间的沟槽。
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公开(公告)号:US09012948B2
公开(公告)日:2015-04-21
申请号:US13175698
申请日:2011-07-01
申请人: Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
发明人: Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
CPC分类号: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要: A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.
摘要翻译: 发光元件包括支撑基板; 形成在所述支撑基板上的反射层; 形成在反射层上的透明层; 形成在透明层上的发光层叠层; 形成在所述透明层和所述反射层之间的蚀刻停止层; 以及形成在发光层叠层和透明层之间的多个接触部。
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