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    Sintered silicon nitride
    1.
    发明申请
    Sintered silicon nitride 审中-公开
    烧结氮化硅

    公开(公告)号：US20080004170A1

    公开(公告)日：2008-01-03

    申请号：US11216877

    申请日：2005-08-30

    申请人： James Guiheen ,  Bjoern Schenk ,  Chien-Wei Li ,  Eric Passman

    发明人： James Guiheen ,  Bjoern Schenk ,  Chien-Wei Li ,  Eric Passman

    IPC分类号： C04B35/56 ,  C04B35/52

    CPC分类号： F01D5/284 ,  C04B35/593 ,  F05D2300/2283

    摘要： Sintered silicon nitride products comprising predominantly β-silicon nitride grains in combination with from about 0.1 to 30 mole % silicon carbide, and grain boundary secondary phases of scandium oxide and scandium disilicate. Such products have high fracture toughness, resistance to recession, and resistance to oxidation at temperatures of at least 1500° C. Methods for preparing sintered silicon nitride products are also disclosed.

    摘要翻译： 主要包含β-氮化硅颗粒与约0.1至30摩尔％的碳化硅以及钪氧化物和二硅酸钪的晶界二次相组合的烧结氮化硅产品。 这些产品在至少1500℃的温度下具有高的断裂韧性，抗后退性和耐氧化性。还公开了制备氮化硅烧结体的方法。

    Oxidation barrier coatings for silicon based ceramics
    3.
    发明申请
    Oxidation barrier coatings for silicon based ceramics 有权
    硅基陶瓷的氧化阻隔涂层

    公开(公告)号：US20050112381A1

    公开(公告)日：2005-05-26

    申请号：US10719629

    申请日：2003-11-21

    申请人： Derek Raybould ,  Chien-Wei Li ,  Bjoern Schenk ,  Thomas Strangman ,  Paul Chipko ,  Lee Poandl

    发明人： Derek Raybould ,  Chien-Wei Li ,  Bjoern Schenk ,  Thomas Strangman ,  Paul Chipko ,  Lee Poandl

    IPC分类号： C04B41/52 ,  C23C28/00 ,  C23C28/04 ,  F01D5/28 ,  F23R3/00 ,  B32B9/04 ,  B05D1/02 ,  B05D1/18 ,  B05D1/36

    CPC分类号： F23R3/007 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C23C28/042 ,  C23C28/048 ,  F01D5/288 ,  F05D2230/312 ,  F05D2300/134 ,  F05D2300/21 ,  F23M2900/05004 ,  Y10T428/30 ,  C04B35/565 ,  C04B35/584 ,  C04B41/4531 ,  C04B41/5066 ,  C04B41/4529 ,  C04B41/5059 ,  C04B41/522 ,  C04B41/4556 ,  C04B41/5035 ,  C04B41/4535 ,  C04B41/5024 ,  C04B41/5027 ,  C04B41/5045 ,  C04B41/4527 ,  C04B41/5042

    摘要： A protective barrier coating system including a diffusion barrier coating and an oxidation barrier coating and method for use in protecting silicon-based ceramic turbine engine components. A complete barrier coating system includes a thermal barrier coating of stabilized zirconia and an environmental barrier coating of an alloyed tantalum oxide. The oxidation barrier coating includes a layer of metallic silicates formed on a substrate of silicon nitride or silicon carbide to be protected. The oxidation barrier coating can include silicates of scandium, ytterbia or yttrium. The oxidation barrier coating may also include an inner layer of Si2ON2 between the diffusion barrier and the metallic silicate layer. The oxidation barrier coating can be applied to the substrate by spraying, slurry dipping and sintering, by a sol-gel process followed by sintering, by plasma spray, or by electron beam-physical vapor deposition. The diffusion layer of essentially pure Si3N4 can be applied to the substrate to prevent the migration of damaging cations from the protective layers to the substrate and is preferably formed by chemical vapor deposition. A method for protecting silicon based substrates can comprise a step of forming an oxidation barrier coating on a substrate, where a step of forming the oxidation barrier includes a step of sintering the oxidation barrier and substrate in a wet gas containing hydrogen.

    摘要翻译： 一种包括扩散阻挡涂层和氧化屏障涂层的保护性屏障涂层系统以及用于保护硅基陶瓷涡轮发动机部件的方法。 完整的阻隔涂层系统包括稳定的氧化锆的隔热涂层和合金化氧化钽的环境屏障涂层。 氧化阻挡涂层包括在待保护的氮化硅或碳化硅的衬底上形成的金属硅酸盐层。 氧化屏障涂层可以包括钪，镱或钇的硅酸盐。 氧化阻隔涂层还可以包括扩散阻挡层和金属硅酸盐层之间的Si 2 2 2 N 2的内层。 通过喷雾，浆料浸渍和烧结，通过溶胶 - 凝胶法烧结，通过等离子体喷涂，或通过电子束 - 物理气相沉积，可将氧化阻隔涂层施加到基材上。 可以将基本上纯的Si 3 N 4 N 4的扩散层施加到基底上，以防止损伤的阳离子从保护层迁移到基底，并且优选地由化学 气相沉积。 用于保护硅基基板的方法可以包括在基板上形成氧化阻挡涂层的步骤，其中形成氧化屏障的步骤包括在含氢的湿气中烧结氧化阻挡层和基板的步骤。

    Oxidation barrier coatings for silicon based ceramics
    5.
    发明授权
    Oxidation barrier coatings for silicon based ceramics 有权
    硅基陶瓷的氧化阻隔涂层

    公开(公告)号：US07323247B2

    公开(公告)日：2008-01-29

    申请号：US10719629

    申请日：2003-11-21

    申请人： Derek Raybould ,  Chien-Wei Li ,  Bjoern Schenk ,  Thomas E. Strangman ,  Paul Chipko ,  Lee Poandl

    发明人： Derek Raybould ,  Chien-Wei Li ,  Bjoern Schenk ,  Thomas E. Strangman ,  Paul Chipko ,  Lee Poandl

    IPC分类号： B32B9/00

    CPC分类号： F23R3/007 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C23C28/042 ,  C23C28/048 ,  F01D5/288 ,  F05D2230/312 ,  F05D2300/134 ,  F05D2300/21 ,  F23M2900/05004 ,  Y10T428/30 ,  C04B35/565 ,  C04B35/584 ,  C04B41/4531 ,  C04B41/5066 ,  C04B41/4529 ,  C04B41/5059 ,  C04B41/522 ,  C04B41/4556 ,  C04B41/5035 ,  C04B41/4535 ,  C04B41/5024 ,  C04B41/5027 ,  C04B41/5045 ,  C04B41/4527 ,  C04B41/5042

    摘要： A protective barrier coating system including a diffusion barrier coating and an oxidation barrier coating and method for use in protecting silicon-based ceramic turbine engine components. A complete barrier coating system includes a thermal barrier coating of stabilized zirconia and an environmental barrier coating of an alloyed tantalum oxide. The oxidation barrier coating includes a layer of metallic silicates formed on a substrate of silicon nitride or silicon carbide to be protected. The oxidation barrier coating can include silicates of scandium, ytterbia or yttrium. The oxidation barrier coating may also include an inner layer of Si2ON2 between the diffusion barrier and the metallic silicate layer. The oxidation barrier coating can be applied to the substrate by spraying, slurry dipping and sintering, by a sol-gel process followed by sintering, by plasma spray, or by electron beam-physical vapor deposition. The diffusion layer of essentially pure Si3N4 can be applied to the substrate to prevent the migration of damaging cations from the protective layers to the substrate and is preferably formed by chemical vapor deposition. A method for protecting silicon based substrates can comprise a step of forming an oxidation barrier coating on a substrate, where a step of forming the oxidation barrier includes a step of sintering the oxidation barrier and substrate in a wet gas containing hydrogen.

    摘要翻译： 一种包括扩散阻挡涂层和氧化屏障涂层的保护性屏障涂层系统以及用于保护硅基陶瓷涡轮发动机部件的方法。 完整的阻隔涂层系统包括稳定的氧化锆的隔热涂层和合金化氧化钽的环境屏障涂层。 氧化阻挡涂层包括在待保护的氮化硅或碳化硅的衬底上形成的金属硅酸盐层。 氧化屏障涂层可以包括钪，镱或钇的硅酸盐。 氧化阻隔涂层还可以包括扩散阻挡层和金属硅酸盐层之间的Si 2 2 2 N 2的内层。 通过喷雾，浆料浸渍和烧结，通过溶胶 - 凝胶法烧结，通过等离子体喷涂，或通过电子束 - 物理气相沉积，可将氧化阻隔涂层施加到基材上。 可以将基本上纯的Si 3 N 4 N 4的扩散层施加到基底上，以防止损伤的阳离子从保护层迁移到基底，并且优选地由化学 气相沉积。 用于保护硅基基板的方法可以包括在基板上形成氧化阻挡涂层的步骤，其中形成氧化屏障的步骤包括在含氢的湿气中烧结氧化阻挡层和基板的步骤。

    Diffusion barrier coating for Si-based components
    6.
    发明授权
    Diffusion barrier coating for Si-based components 有权
    Si基组分的扩散阻挡涂层

    公开(公告)号：US07300702B2

    公开(公告)日：2007-11-27

    申请号：US10644523

    申请日：2003-08-18

    申请人： Chien-Wei Li ,  Derek Raybould ,  Thomas E. Strangman ,  Bjoern Schenk

    发明人： Chien-Wei Li ,  Derek Raybould ,  Thomas E. Strangman ,  Bjoern Schenk

    IPC分类号： B32B9/00

    CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  Y10T428/265 ,  C04B41/4531 ,  C04B41/5066 ,  C04B41/4558 ,  C04B41/5027 ,  C04B41/5035 ,  C04B41/5022 ,  C04B41/522 ,  C04B41/5042 ,  C04B35/565 ,  C04B35/58 ,  C04B35/584

    摘要： A component comprising a silicon-based substrate and a diffusion barrier coating disposed on the silicon-based substrate. The diffusion barrier coating comprises an isolation layer disposed directly on the silicon-based substrate and at least one oxygen barrier layer disposed on the isolation layer. The oxygen barrier layer prevents the diffusion of oxygen therethrough, and prevents excessive oxidation of the silicon-based substrate. The isolation layer(s) prevent contaminants and impurities from reacting with the oxygen barrier layer. An environmental barrier coating may be disposed on the diffusion barrier coating, and a thermal barrier coating may be disposed on the environmental barrier coating. Methods for making a component having a diffusion barrier coating are also disclosed.

    摘要翻译： 一种组件，包括硅基衬底和设置在硅基衬底上的扩散阻挡涂层。 扩散阻挡涂层包括直接设置在硅基衬底上的隔离层和设置在隔离层上的至少一个氧阻挡层。 氧阻隔层防止氧气扩散通过其中，并防止硅基衬底的过度氧化。 隔离层防止污染物和杂质与氧阻隔层反应。 可以在扩散阻挡涂层上设置环境屏障涂层，并且可以在环境屏障涂层上设置热障涂层。 还公开了制备具有扩散阻挡涂层的组分的方法。

    Sintered silicon nitride
    9.
    发明授权
    Sintered silicon nitride 有权
    烧结氮化硅

    公开(公告)号：US06977233B2

    公开(公告)日：2005-12-20

    申请号：US10621168

    申请日：2003-07-15

    申请人： Chien-Wei Li ,  Bjoern Schenk ,  James V. Guiheen

    发明人： Chien-Wei Li ,  Bjoern Schenk ,  James V. Guiheen

    IPC分类号： C04B35/593 ,  F01D5/28 ,  C04B35/577 ,  C04B35/596

    CPC分类号： F01D5/284 ,  C04B35/593 ,  F05D2300/2283

    摘要： Sintered silicon nitride products comprising predominantly β-silicon nitride grains in combination with from about 0.1 to 30 mole % silicon carbide, and grain boundary secondary phases of scandium oxide and scandium disilicate. Such products have high fracture toughness, resistance to recession, and resistance to oxidation at temperatures of at least 1500° C. Methods for preparing sintered silicon nitride products are also disclosed.

    摘要翻译： 主要包含β-氮化硅颗粒与约0.1至30摩尔％的碳化硅以及钪氧化物和二硅酸钪的晶界二次相组合的烧结氮化硅产品。 这些产品在至少1500℃的温度下具有高的断裂韧性，抗后退性和耐氧化性。还公开了制备氮化硅烧结体的方法。