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    Light-Emitting Device
    3.
    发明申请
    Light-Emitting Device 审中-公开
    发光装置

    公开(公告)号：US20090114940A1

    公开(公告)日：2009-05-07

    申请号：US12055119

    申请日：2008-03-25

    申请人： Chih-Chung Yang ,  Dong-Ming Yeh ,  Cheng-Yen Chen ,  Yen-Cheng Lu ,  Kun-Ching Shen ,  Chi-Feng Huang

    发明人： Chih-Chung Yang ,  Dong-Ming Yeh ,  Cheng-Yen Chen ,  Yen-Cheng Lu ,  Kun-Ching Shen ,  Chi-Feng Huang

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44

    摘要： The invention provides a light-emitting device, comprising a light-emitting element and a surface plasmon coupling element connected to the light-emitting element. In an embodiment of the invention, the surface plasmon coupling element comprises a dielectric layer connected to the light-emitting element and a metal layer on the dielectric layer. In another embodiment of the invention, the light-emitting device is a light-emitting diode, comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer, and a surface plasmon coupling element adjacent to the n-type semiconductor layer. In a further embodiment of the invention, a current spreading layer on a second type semiconductor layer of the light-emitting device includes a plurality of strip-shaped structures, and the surface plasmon coupling element is disposed on the current spreading layer and filled into the gap between the strip-shaped structures of the current spreading layer.

    摘要翻译： 本发明提供了一种发光装置，包括发光元件和连接到发光元件的表面等离子体激元耦合元件。 在本发明的实施例中，表面等离子体激元耦合元件包括连接到发光元件的电介质层和介电层上的金属层。 在本发明的另一个实施例中，发光装置是发光二极管，其包括n型半导体层和p型半导体层之间的有源层以及与n型半导体层相邻的表面等离子体耦合元件 半导体层。 在本发明的另一实施例中，发光器件的第二类型半导体层上的电流扩展层包括多个条形结构，并且表面等离子体激元耦合元件设置在电流扩展层上并被填充到 电流扩展层的带状结构之间的间隙。

    Extreme ultraviolet lithography process and mask
    7.
    发明授权
    Extreme ultraviolet lithography process and mask 有权
    极紫外光刻工艺和面膜

    公开(公告)号：US08841047B2

    公开(公告)日：2014-09-23

    申请号：US13437099

    申请日：2012-04-02

    申请人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    发明人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  G03F1/58 ,  G03F7/7015 ,  G03F7/70191

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和一个场。 EUV掩模由具有部分相干性的几乎轴向照明（ONI）暴露; 小于0.3以产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same
    8.
    发明申请
    Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same 有权
    极紫外光刻面和多层沉积方法制作相同

    公开(公告)号：US20140038090A1

    公开(公告)日：2014-02-06

    申请号：US13567900

    申请日：2012-08-06

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F7/20

    CPC分类号： G03F1/24 ,  G03F1/52

    摘要： A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.

    摘要翻译： 公开了一种掩模，其制造方法及其使用方法。 在一个示例中，掩模包括沉积在衬底上的衬底和反射多层涂层。 反射多层涂层通过定位基板形成，使得在基板的法线和着陆在基板上的颗粒之间形成角度α，并使基板围绕与颗粒的着陆方向平行的轴线旋转。 在一个实例中，反射多层涂层包括沉积在第一层上的第一层和第二层。 反射多层涂层的相缺陷区域包括在第一位置处的第一层中的第一变形，以及在第二位置处的第二层中的第二变形，第二位置从第一位置横向移位。

    Extreme ultraviolet lithography process and mask
    9.
    发明授权
    Extreme ultraviolet lithography process and mask 有权
    极紫外光刻工艺和面膜

    公开(公告)号：US08628897B1

    公开(公告)日：2014-01-14

    申请号：US13542458

    申请日：2012-07-05

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F1/22

    CPC分类号： G03F1/24

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK
    10.
    发明申请
    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK 有权
    极致超紫外线光刻工艺和掩模

    公开(公告)号：US20140011120A1

    公开(公告)日：2014-01-09

    申请号：US13542458

    申请日：2012-07-05

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F7/20

    CPC分类号： G03F1/24

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。