公开(公告)号：US20120104472A1

公开(公告)日：2012-05-03

申请号：US12917902

申请日：2010-11-02

申请人： Jeff J. Xu ,  Chih-Hao Chang

发明人： Jeff J. Xu ,  Chih-Hao Chang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L27/0886 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes providing a semiconductor substrate; forming a first fin structure and a second fin structure over the semiconductor substrate; forming a gate structure over a portion of the first and second fin structures, such that the gate structure traverses the first and second fin structures; epitaxially growing a first semiconductor material on exposed portions of the first and second fin structures, such that the exposed portions of the first and second fin structures are merged together; and epitaxially growing a second semiconductor material over the first semiconductor material.

摘要翻译： 公开了一种用于制造FinFET器件的FinFET器件和方法。 一种示例性方法包括提供半导体衬底; 在半导体衬底上形成第一鳍结构和第二鳍结构; 在所述第一和第二鳍结构的一部分上形成栅极结构，使得所述栅极结构穿过所述第一鳍结构和所述第二鳍结构; 在第一和第二鳍结构的暴露部分上外延生长第一半导体材料，使得第一鳍结构和第二鳍结构的暴露部分合并在一起; 并且在所述第一半导体材料上外延生长第二半导体材料。

公开(公告)号：US08623728B2

公开(公告)日：2014-01-07

申请号：US12831842

申请日：2010-07-07

申请人： Chih-Hao Chang ,  Jeff J. Xu ,  Chien-Hsun Wang ,  Chih Chieh Yeh ,  Chih-Hsiang Chang

发明人： Chih-Hao Chang ,  Jeff J. Xu ,  Chien-Hsun Wang ,  Chih Chieh Yeh ,  Chih-Hsiang Chang

IPC分类号： H01L21/336 ,  H01L21/31 ,  H01L21/469 ,  H01L21/00

CPC分类号： H01L29/785 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/18 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/7848

摘要： A method for producing a SiGe stressor with high Ge concentration is provided. The method includes providing a semiconductor substrate with a source area, a drain area, and a channel in between; depositing the first SiGe film layer on the source area and/or the drain area; performing a low temperature thermal oxidation, e.g., a high water vapor pressure wet oxidation, to form an oxide layer at the top of the first SiGe layer and to form the second SiGe film layer with high Ge percentage at the bottom of the first SiGe film layer without Ge diffusion into the semiconductor substrate; performing a thermal diffusion to form the SiGe stressor from the second SiGe film layer, wherein the SiGe stressor provides uniaxial compressive strain on the channel; and removing the oxide layer. A Si cap layer can be deposited on the first SiGe film layer prior to performing oxidation.

摘要翻译： 提供了具有高Ge浓度的SiGe应激源的制造方法。 该方法包括：提供具有源极区域，漏极区域和沟道之间的半导体衬底; 在源极区域和/或漏极区域上沉积第一SiGe膜层; 进行低温热氧化，例如高水蒸气压湿氧化，以在第一SiGe层的顶部形成氧化物层，并在第一SiGe膜的底部形成具有高Ge百分比的第二SiGe膜层 Ge层扩散到半导体衬底中; 执行热扩散以从第二SiGe膜层形成SiGe应力源，其中SiGe应力源在通道上提供单轴压缩应变; 并除去氧化物层。 在进行氧化之前，可以在第一SiGe膜层上淀积Si覆盖层。

公开(公告)号：US08497528B2

公开(公告)日：2013-07-30

申请号：US12775006

申请日：2010-05-06

申请人： Tsung-Lin Lee ,  Chih-Hao Chang ,  Chih-Hsin Ko ,  Feng Yuan ,  Jeff J. Xu

发明人： Tsung-Lin Lee ,  Chih-Hao Chang ,  Chih-Hsin Ko ,  Feng Yuan ,  Jeff J. Xu

IPC分类号： H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/30604 ,  H01L21/31 ,  H01L21/31116 ,  H01L21/76 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/0856 ,  H01L29/0873 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

摘要： A structure for a field effect transistor on a substrate that includes a gate stack, an isolation structure and a source/drain (S/D) recess cavity below the top surface of the substrate disposed between the gate stack and the isolation structure. The recess cavity having a lower portion and an upper portion. The lower portion having a first strained layer and a first dielectric film. The first strained layer disposed between the isolation structure and the first dielectric film. A thickness of the first dielectric film less than a thickness of the first strained layer. The upper portion having a second strained layer overlying the first strained layer and first dielectric film.

摘要翻译： 一种用于衬底上的场效应晶体管的结构，其包括栅极堆叠，隔离结构以及位于栅叠层和隔离结构之间的衬底顶表面下方的源极/漏极（S / D）凹槽。 该凹腔具有下部和上部。 下部具有第一应变层和第一介电膜。 第一应变层设置在隔离结构和第一介电膜之间。 第一电介质膜的厚度小于第一应变层的厚度。 上部具有覆盖在第一应变层和第一介电膜上的第二应变层。

公开(公告)号：US20120091528A1

公开(公告)日：2012-04-19

申请号：US12906820

申请日：2010-10-18

申请人： Chih-Hao Chang ,  Jeff J. Xu

发明人： Chih-Hao Chang ,  Jeff J. Xu

IPC分类号： H01L27/12 ,  H01L21/336

CPC分类号： H01L27/0886 ,  H01L27/12 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes providing a semiconductor substrate; forming a fin structure over the semiconductor substrate, the fin structure including a first material portion over the semiconductor substrate and a second material portion over the first material portion; forming a gate structure over a portion of the fin structure, such that the gate structure traverses the fin structure, thereby separating a source region and a drain region of the fin structure, wherein the source and drain regions of the fin structure define a channel therebetween; removing the second material portion from the source and drain regions of the fin structure; and after removing the second material portion, forming a third material portion in the source and drain regions of the fin structure.

摘要翻译： 公开了一种用于制造FinFET器件的FinFET器件和方法。 一种示例性方法包括提供半导体衬底; 在所述半导体衬底上形成翅片结构，所述翅片结构包括所述半导体衬底上的第一材料部分和所述第一材料部分上的第二材料部分; 在翅片结构的一部分上形成栅极结构，使得栅极结构穿过翅片结构，从而分离翅片结构的源极区域和漏极区域，其中鳍状结构的源极和漏极区域在其间限定通道 ; 从翅片结构的源区和漏区移除第二材料部分; 并且在去除第二材料部分之后，在鳍结构的源极和漏极区域中形成第三材料部分。

公开(公告)号：US09166022B2

公开(公告)日：2015-10-20

申请号：US12917902

申请日：2010-11-02

申请人： Jeff J. Xu ,  Chih-Hao Chang

发明人： Jeff J. Xu ,  Chih-Hao Chang

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L27/0886 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes providing a semiconductor substrate; forming a first fin structure and a second fin structure over the semiconductor substrate; forming a gate structure over a portion of the first and second fin structures, such that the gate structure traverses the first and second fin structures; epitaxially growing a first semiconductor material on exposed portions of the first and second fin structures, such that the exposed portions of the first and second fin structures are merged together; and epitaxially growing a second semiconductor material over the first semiconductor material.

摘要翻译： 公开了一种用于制造FinFET器件的FinFET器件和方法。 一种示例性方法包括提供半导体衬底; 在半导体衬底上形成第一鳍结构和第二鳍结构; 在所述第一和第二鳍结构的一部分上形成栅极结构，使得所述栅极结构穿过所述第一鳍结构和所述第二鳍结构; 在第一和第二鳍结构的暴露部分上外延生长第一半导体材料，使得第一鳍结构和第二鳍结构的暴露部分合并在一起; 并且在所述第一半导体材料上外延生长第二半导体材料。

公开(公告)号：US08367498B2

公开(公告)日：2013-02-05

申请号：US12906820

申请日：2010-10-18

申请人： Chih-Hao Chang ,  Jeff J. Xu

发明人： Chih-Hao Chang ,  Jeff J. Xu

IPC分类号： H01L27/12 ,  H01L21/336

CPC分类号： H01L27/0886 ,  H01L27/12 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes providing a semiconductor substrate; forming a fin structure over the semiconductor substrate, the fin structure including a first material portion over the semiconductor substrate and a second material portion over the first material portion; forming a gate structure over a portion of the fin structure, such that the gate structure traverses the fin structure, thereby separating a source region and a drain region of the fin structure, wherein the source and drain regions of the fin structure define a channel therebetween; removing the second material portion from the source and drain regions of the fin structure; and after removing the second material portion, forming a third material portion in the source and drain regions of the fin structure.

公开(公告)号：US08935452B2

公开(公告)日：2015-01-13

申请号：US13039271

申请日：2011-03-02

申请人： Mao-Shun Hsi ,  Yau-Shi Hwang ,  Chih-Hao Chang ,  Po-Nien Wang

发明人： Mao-Shun Hsi ,  Yau-Shi Hwang ,  Chih-Hao Chang ,  Po-Nien Wang

IPC分类号： G06F13/00 ,  H01R11/00 ,  H01R12/72

CPC分类号： H01R12/721

摘要： A connector assembly for connecting a peripheral device to a computer includes a male connector having a plurality of first connecting pins and a female connector having a plurality of second connecting pins. The plurality of first connecting pins is configured to connect to the peripheral device. The plurality of second connecting pins is configured to connect to the computer. The plurality of second connecting pins is defined on the first circuit board in a second row and a third row. The plurality of second connecting pins comprises a plurality of differential pairs, and each differential pair comprises two differential transmission lines. The two differential transmission lines of each of the plurality of differential pairs are defined on a single row of the second and third rows.

摘要翻译： 用于将外围设备连接到计算机的连接器组件包括具有多个第一连接引脚的阳连接器和具有多个第二连接引脚的阴连接器。 多个第一连接引脚被配置为连接到外围设备。 多个第二连接销被配置为连接到计算机。 多个第二连接销被限定在第二行和第三行的第一电路板上。 多个第二连接引脚包括多个差分对，并且每个差分对包括两个差分传输线。 多个差分对中的每一个的两个差分传输线被限定在第二行和第三行的单行上。

公开(公告)号：US08804065B2

公开(公告)日：2014-08-12

申请号：US13346400

申请日：2012-01-09

申请人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Yu-Jung Peng ,  Tsung-Hua Yang ,  Chih-Hao Chang

发明人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Yu-Jung Peng ,  Tsung-Hua Yang ,  Chih-Hao Chang

IPC分类号： G02F1/1333 ,  G02F1/1339

CPC分类号： G02B26/005 ,  G02F1/133305 ,  G02F1/133377 ,  G02F1/13394 ,  G02F2001/13396

摘要： A flexible liquid crystal display and a flexible fluid display are provided. The flexible liquid crystal display includes a first module, a second module, at least two supporting structures and a liquid crystal layer. The second module is disposed correspondingly to the first module. The supporting structures are separately disposed between the first module and the second module and used for abutting the first module and the second module, so that a space between the first module and the second module is divided into a flexible area and two non-flexible areas. The flexible area is located between the two non-flexible areas. The liquid crystal layer is disposed in the flexible area and the two non-flexible areas.

摘要翻译： 提供柔性液晶显示器和柔性流体显示器。 柔性液晶显示器包括第一模块，第二模块，至少两个支撑结构和液晶层。 第二模块相对于第一模块设置。 所述支撑结构分别设置在所述第一模块和所述第二模块之间，并且用于邻接所述第一模块和所述第二模块，使得所述第一模块和所述第二模块之间的空间被分成柔性区域和两个非柔性区域 。 柔性区域位于两个非柔性区域之间。 液晶层设置在柔性区域和两个非柔性区域中。

公开(公告)号：US08759920B2

公开(公告)日：2014-06-24

申请号：US13486343

申请日：2012-06-01

申请人： Clement Hsingjen Wann ,  Chih-Hao Chang ,  Shou Zen Chang ,  Chih-Hsin Ko ,  Yasutoshi Okuno ,  Andrew Joseph Kelly

发明人： Clement Hsingjen Wann ,  Chih-Hao Chang ,  Shou Zen Chang ,  Chih-Hsin Ko ,  Yasutoshi Okuno ,  Andrew Joseph Kelly

IPC分类号： H01L21/70

CPC分类号： H01L21/823814 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823828 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/6656 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including an active region including a plurality of device regions. The semiconductor device further includes a first device disposed in a first device region of the plurality of device regions, the first device including a first gate structure, first gate spacers disposed on sidewalls of the first gate structure, and first source and drain features. The semiconductor device further includes a second device disposed in a second device region of the plurality of device regions, the second device including a second gate structure, second gate spacers disposed on sidewalls of the second gate structure, and second source and drain features. The second and first source and drain features having a source and drain feature and a contact feature in common. The common contact feature being a self-aligned contact.

摘要翻译： 公开了一种用于制造半导体器件的半导体器件和方法。 示例性半导体器件包括包括包括多个器件区域的有源区的半导体衬底。 半导体器件还包括设置在多个器件区域的第一器件区域中的第一器件，第一器件包括第一栅极结构，设置在第一栅极结构的侧壁上的第一栅极间隔区以及第一源极和漏极特征。 半导体器件还包括设置在多个器件区域的第二器件区域中的第二器件，第二器件包括第二栅极结构，设置在第二栅极结构的侧壁上的第二栅极间隔区以及第二源极和漏极特征。 第二和第一源极和漏极特征具有源极和漏极特征以及共同的接触特征。 常见的接触特征是自对准接触。

公开(公告)号：US08727601B2

公开(公告)日：2014-05-20

申请号：US13334977

申请日：2011-12-22

申请人： Yi-Kai Wang ,  Tsung-Hua Yang ,  Tarng-Shiang Hu ,  Chih-Hao Chang ,  Yu-Jung Peng

发明人： Yi-Kai Wang ,  Tsung-Hua Yang ,  Tarng-Shiang Hu ,  Chih-Hao Chang ,  Yu-Jung Peng

IPC分类号： G09F13/08

CPC分类号： G09F9/30 ,  G09F9/301

摘要： A display includes a flexible display panel having a back face, two backlight modules disposed on the back face of the display panel and each including a contact end, and an outer casing having two casing panels respectively connected to and supporting the backlight modules oppositely of the display panel. The casing panels are pivotal to move the backlight modules and the display panel between collapsed and non-collapsed positions. In the collapsed position, the display panel is folded, and the backlight modules are parallelly spaced apart. In the non-collapsed position, the display panel is laid flat, the backlight modules coplanarly cover the back face of the display panel, and the contact ends of the backlight modules abut against each other.

摘要翻译： 显示器包括具有背面的柔性显示面板，设置在显示面板的背面上的两个背光模块，每个包括接触端，以及具有两个壳体面板的外壳，两个外壳面板分别连接到背光模块 显示面板。 壳体面板枢转以将背光模块和显示面板在折叠位置和非折叠位置之间移动。 在折叠位置，显示面板被折叠，并且背光模块平行间隔开。 在未折叠位置，显示面板平坦化，背光模块共面地覆盖显示面板的背面，背光模块的接触端部彼此抵接。