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    Memory cell structure
    1.
    发明申请
    Memory cell structure 有权
    存储单元结构

    公开(公告)号：US20060233002A1

    公开(公告)日：2006-10-19

    申请号：US11093652

    申请日：2005-03-30

    申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Lin

    发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Lin

    IPC分类号： G11C19/08

    CPC分类号： G11C11/16

    摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

    摘要翻译： 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

    Multi-sensing level MRAM structure with different magneto-resistance ratios
    3.
    发明申请
    Multi-sensing level MRAM structure with different magneto-resistance ratios 审中-公开
    具有不同磁阻比的多感测电平MRAM结构

    公开(公告)号：US20060152973A1

    公开(公告)日：2006-07-13

    申请号：US11374590

    申请日：2006-03-13

    申请人： Wen Lin ,  Denny Tang

    发明人： Wen Lin ,  Denny Tang

    IPC分类号： G11C11/15

    CPC分类号： H01L27/222 ,  G11C11/15 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/228

    摘要： A new process and structure for a multi-sensing level magnetic random access memory (MRAM) cell having different magneto-resistance (MR) ratios includes an improved magnetic tunnel junction (MTJ) configuration. The MTJ configuration includes a first free layer proximate to a first tunneling barrier and a second free layer proximate to a second tunneling barrier and a pinned layer. The first free layer is sandwiched between the first and second tunneling layers. The first tunneling barrier has a MR ratio that differs from a MR ratio of the second tunneling barrier.

    摘要翻译： 具有不同磁阻（MR）比的多感测级磁随机存取存储器（MRAM）单元的新工艺和结构包括改进的磁隧道结（MTJ）配置。 MTJ配置包括靠近第一隧道势垒的第一自由层和靠近第二隧道势垒和钉扎层的第二自由层。 第一自由层夹在第一和第二隧道层之间。 第一隧道势垒具有与第二隧道势垒的MR比不同的MR比。

    Write line design in MRAM
    4.
    发明申请
    Write line design in MRAM 审中-公开
    在MRAM中写线设计

    公开(公告)号：US20060278908A1

    公开(公告)日：2006-12-14

    申请号：US11505141

    申请日：2006-08-16

    申请人： Wen Lin ,  Denny Tang ,  Li-shyue Lai ,  Chao-Hsiung Wang

    发明人： Wen Lin ,  Denny Tang ,  Li-shyue Lai ,  Chao-Hsiung Wang

    IPC分类号： H01L29/94

    CPC分类号： G11C11/15 ,  G11C5/063

    摘要： A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.

    摘要翻译： 公开了一种磁性随机存取存储器件（MRAM）及其形成方法。 MRAM具有与第一写入线正交的磁性隧道结（MTJ）器件，第一写入线和第二写入线，其中第一和第二写入线中的至少一个具有比MTJ窄的宽度。

    Multi-sensing level MRAM structures
    5.
    发明申请
    Multi-sensing level MRAM structures 审中-公开
    多感测级MRAM结构

    公开(公告)号：US20060039183A1

    公开(公告)日：2006-02-23

    申请号：US10850855

    申请日：2004-05-21

    申请人： Wen Lin ,  Denny Tang ,  Chien-Chung Hung ,  Wen-Chin Lee

    发明人： Wen Lin ,  Denny Tang ,  Chien-Chung Hung ,  Wen-Chin Lee

    IPC分类号： G11C11/00

    CPC分类号： G11C11/5607 ,  G11C11/16

    摘要： A memory cell including a switching element having a source and a drain, a first magnetic tunnel junction (MTJ) device, and a second MTJ device. The first MTJ device has a first tunneling junction resistance and is coupled to a first one of the switching element source and drain. The second MTJ device has a second tunneling junction resistance and is coupled to a second one of the switching element source and drain. The second resistance is substantially less than the first resistance.

    摘要翻译： 一种存储单元，包括具有源极和漏极的开关元件，第一磁性隧道结（MTJ）器件和第二MTJ器件。 第一MTJ器件具有第一隧道结电阻并且耦合到开关元件源极和漏极中的第一个。 第二MTJ器件具有第二隧道结电阻并且耦合到开关元件源极和漏极中的第二个。 第二阻力远小于第一阻力。

    Multi-sensing level MRAM structure with different magnetoresistance ratios
    6.
    发明申请
    Multi-sensing level MRAM structure with different magnetoresistance ratios 审中-公开
    具有不同磁阻比的多感测电平MRAM结构

    公开(公告)号：US20050073878A1

    公开(公告)日：2005-04-07

    申请号：US10678699

    申请日：2003-10-03

    申请人： Wen Lin ,  Denny Tang

    发明人： Wen Lin ,  Denny Tang

    IPC分类号： G11C11/15 ,  G11C11/56 ,  H01L27/22

    CPC分类号： H01L27/222 ,  G11C11/15 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/228

    摘要： A new process and structure for a multi-sensing level magnetic random access memory (MRAM) cell having different magneto-resistance (MR) ratios includes an improved magnetic tunnel junction (MTJ) configuration. The MTJ configuration includes a first free layer proximate to a first tunneling barrier and a second free layer proximate to a second tunneling barrier and a pinned layer. The first free layer is sandwiched between the first and second tunneling layers. The first tunneling barrier has a MR ratio that differs from a MR ratio of the second tunneling barrier.

    摘要翻译： 具有不同磁阻（MR）比的多感测级磁随机存取存储器（MRAM）单元的新工艺和结构包括改进的磁隧道结（MTJ）配置。 MTJ配置包括靠近第一隧道势垒的第一自由层和靠近第二隧道势垒和钉扎层的第二自由层。 第一自由层夹在第一和第二隧道层之间。 第一隧道势垒具有与第二隧道势垒的MR比不同的MR比。

    MRAM cell with reduced write current
    7.
    发明申请
    MRAM cell with reduced write current 有权
    降低写入电流的MRAM单元

    公开(公告)号：US20060146602A1

    公开(公告)日：2006-07-06

    申请号：US11030453

    申请日：2005-01-06

    申请人： Wen Lin ,  Denny Tang ,  Li-Shyue Lai

    发明人： Wen Lin ,  Denny Tang ,  Li-Shyue Lai

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： G11C11/16 ,  G11C5/063

    摘要： A magnetic random access memory (MRAM) cell including an MRAM stack and a conductive line for carrying write current associated with the MRAM cell in a direction that is angularly offset from an easy axis of the MRAM stack by an acute angle, such as about 45 degrees.

    摘要翻译： 磁性随机存取存储器（MRAM）单元，其包括MRAM堆叠和用于承载与MRAM单元相关联的写入电流的导线，所述写入电流以与MRAM堆叠的容易轴成角度偏移的方向（例如约45°） 度。

    Non-orthogonal write line structure in MRAM
    8.
    发明申请
    Non-orthogonal write line structure in MRAM 有权
    MRAM中的非正交写行结构

    公开(公告)号：US20050232005A1

    公开(公告)日：2005-10-20

    申请号：US10827079

    申请日：2004-04-19

    申请人： Wen Lin ,  Denny Tang ,  Li-Shyue Lai

    发明人： Wen Lin ,  Denny Tang ,  Li-Shyue Lai

    IPC分类号： G11C11/00 ,  G11C11/16

    CPC分类号： G11C11/16

    摘要： An MRAM cell including an MRAM cell stack located over a substrate and first and second write lines spanning at least one side of the MRAM cell stack and defining a projected region of intersection of the MRAM cell stack and the first and second write lines. The MRAM cell stack includes a pinned layer, a tunneling barrier layer, and a free layer, the tunneling barrier layer interposing the pinned layer and the free layer. The first write line extends in a first direction within the projected region of intersection. The second write line extends in a second direction within the projected region of intersection. The first and second directions are angularly offset by an angle ranging between 45 and 90 degrees, exclusively. At least one write line may be perpendicular to the easy axis of free layer, while the other line may be rotated off the easy axis of the free layer by an angle which is larger than zero, such as to compensate for a shifting astroid curve.

    摘要翻译： MRAM单元包括位于衬底上的MRAM单元堆叠，以及横跨MRAM单元堆叠的至少一侧的第一和第二写入线，并且定义MRAM单元堆叠与第一和第二写入线之间的投影区域。 MRAM单元堆叠包括钉扎层，隧道势垒层和自由层，隧道势垒层插入被钉扎层和自由层。 第一写入线在投影的交叉区域内沿第一方向延伸。 第二写入线在投影的交叉区域内沿第二方向延伸。 第一和第二方向的角度偏移45度到90度之间的角度。 至少一条写入线可以垂直于自由层的容易轴，而另一条线可以从自由层的容易轴旋转大于零的角度，以补偿移动的星形曲线。

    System and method for increasing magneting flux efficiency and cell density in MRAM design
    10.
    发明申请
    System and method for increasing magneting flux efficiency and cell density in MRAM design 审中-公开
    在MRAM设计中增加磁通效率和电池密度的系统和方法

    公开(公告)号：US20050006679A1

    公开(公告)日：2005-01-13

    申请号：US10603351

    申请日：2003-06-25

    申请人： Wen Lin ,  Denny Tang

    发明人： Wen Lin ,  Denny Tang

    IPC分类号： G11C11/15 ,  H01L27/22 ,  H01L29/76

    CPC分类号： H01L27/224 ,  G11C11/15

    摘要： A magnetic memory device and the method for making same are disclosed. The device uses two metal lines to control a combined magnetic field created thereof. The device has a magnetic memory element connecting to a substrate at a first end thereof, a first metal line connecting to a second end of the magnetic memory element. Further, the device has a second metal line crossing perpendicularly over the first metal line for jointly generating the combined magnetic field, wherein the second metal line is on the side of the second end of the magnetic memory element.

    摘要翻译： 公开了一种磁存储器件及其制造方法。 该装置使用两条金属线来控制由其产生的组合磁场。 该装置具有在其第一端处连接到基板的磁存储元件，连接到磁存储元件的第二端的第一金属线。 此外，该装置具有垂直于第一金属线交叉的第二金属线，用于共同产生组合的磁场，其中第二金属线位于磁存储元件的第二端侧。