摘要:
A process for forming a thin film transistor includes steps of (a) forming a gate on a portion of a substrate, (b) forming a gate dielectric layer, a semiconductor layer, a source, a drain, and a passivation in order on the substrate, and (c) proceeding a thermal treatment under atmosphere of a specific assistant gas. The specific assistant gas is one selected from a group consisting of hydrogen, steam, inert gases, and gas mixtures thereof. After providing the specific assistant gas during the thermal treatment, the process can improve the output property of the thin film transistor for avoiding double hump phenomenon.
摘要:
A method of patterning an indium tin oxide (ITO) layer is performed on a glass substrate. First, using sputtering, an amorphous ITO layer is deposited on the glass substrate. Then, using excimer laser annealing (ELA), the amorphous ITO layer within a predetermined pattern is turned into a crystalline ITO layer. Finally, using an etch solution, the amorphous ITO layer outside the predetermine pattern is removed.
摘要:
A color display apparatus includes a driving substrate, a color filter, a display layer and an adhesive. The color filter is faced to the driving substrate. The color filter includes a substrate and a filter layer, and the filter layer is disposed on the substrate and faced to the driving substrate. The display layer is disposed between the driving substrate and the color filter, and an orthographic projection of the display layer projecting on the filter layer is surrounded by a periphery boundary of the filter layer. An interval is existed between the orthographic projection of the display layer projecting on the filter layer and the periphery boundary of the filter layer. Besides, the adhesive is disposed between the display layer and the color filter, and a periphery boundary of the display layer and the periphery boundary of the filter layer are surrounded by the adhesive.
摘要:
A liquid crystal display panel including a first conductive substrate, a second conductive substrate and a liquid crystal layer is provided. The first conductive substrate includes a base, a first protrusion, a second protrusion and a photo-spacer. The first protrusion and the second protrusion disposed above the base are symmetric with respect to a central line. The second protrusion is a mirror reflection structure of the first protrusion with respect to the central line. The photo-spacer substantially disposed on the central line and positioned above the base is positioned between the first protrusion and the second protrusion. The second conductive substrate is parallel to the first conductive substrate. The liquid crystal layer is disposed between the first conductive substrate and the second conductive substrate.
摘要:
An active device array substrate is provided. The active device array substrate includes a plurality of pixel units. Each of the pixel units includes a first active device, a first scan line, a second active device, a second scan line, a data line, a common line, and a pixel electrode. The first scan line is electrically connected to a first gate of the first active device. The second scan line is electrically connected to a second gate of the second active device. The data line is electrically connected to a first source of the first active device. The common line is electrically connected to a second source of the second active device. The pixel electrode is electrically connected to a first drain of the first active device and a second drain of the second active device.
摘要:
A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.
摘要:
A color display apparatus includes a driving substrate, a color filter, a display layer and an adhesive. The color filter is faced to the driving substrate. The color filter includes a substrate and a filter layer, and the filter layer is disposed on the substrate and faced to the driving substrate. The display layer is disposed between the driving substrate and the color filter, and an orthographic projection of the display layer projecting on the filter layer is surrounded by a periphery boundary of the filter layer. An interval is existed between the orthographic projection of the display layer projecting on the filter layer and the periphery boundary of the filter layer. Besides, the adhesive is disposed between the display layer and the color filter, and a periphery boundary of the display layer and the periphery boundary of the filter layer are surrounded by the adhesive.
摘要:
A pixel structure including an active device, a first pixel electrode, a second pixel electrode, a coupling line, a common electrode, and a liquid crystal layer is provided. The first pixel electrode and the second pixel electrode have a plurality of sets of stripped electrode patterns extending along different directions, respectively, and the first pixel electrode is electrically insulated from the second pixel electrode. The coupling line is disposed under the first and the second pixel electrode and electrically insulated from the second pixel electrode. The first pixel electrode is electrically connected to the active device through the coupling line. The common electrode is disposed over the first and the second pixel electrode. The liquid crystal layer is disposed between the common electrode and the first and second pixel electrodes. Moreover, the liquid crystal layer has two polymer layers and a liquid crystal molecule layer disposed between the polymer layers.
摘要:
A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.
摘要:
A color display apparatus includes a driving substrate, a color filter and a display layer. The driving substrate has a display region and a non-display region, and at least a first alignment mark is disposed on the non-display region. The color filter is opposite to the driving substrate. The color filter includes a substrate and a filter layer disposed on the substrate. The substrate has a first region corresponding to the display region and a second region corresponding to the non-display region. The filter layer includes color filter patterns located on the first region and at least a second alignment mark located on the second region and corresponding to the first alignment mark. The display layer is disposed between the driving substrate and the color filter. Alignment precision between the driving substrate and the color filter of the color display apparatus is improved. Besides, a color filter is also provided.