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    ESD protection devices and methods
    1.
    发明授权
    ESD protection devices and methods 有权
    ESD保护装置和方法

    公开(公告)号：US08958184B2

    公开(公告)日：2015-02-17

    申请号：US12979635

    申请日：2010-12-28

    申请人： Christian Russ ,  Werner Hoellinger ,  Bernhard Stein

    发明人： Christian Russ ,  Werner Hoellinger ,  Bernhard Stein

    IPC分类号： H02H9/00 ,  H02H9/04

    CPC分类号： H02H9/046

    摘要： Various embodiments described below relate to an ESD protection device that includes a voltage controlled shunt (e.g., a transistor) to selectively shunt energy of an incoming ESD pulse away from a circuit that includes a semiconductor device to be protected. In some embodiments, the ESD protection device includes a power up detection element to determine whether the circuit has powered up. If the circuit is powered up, the power up detection element prevents inadvertent triggering of the ESD protection device.

    摘要翻译： 下面描述的各种实施例涉及ESD保护装置，其包括电压控制分流器（例如，晶体管），以便选择性地将输入的ESD脉冲的能量远离包括待保护的半导体器件的电路分流。 在一些实施例中，ESD保护装置包括用于确定电路是否通电的上电检测元件。 如果电路通电，则上电检测元件可防止ESD保护器件的意外触发。

    ESD Protection Devices and Methods
    2.
    发明申请
    ESD Protection Devices and Methods 有权
    ESD保护装置和方法

    公开(公告)号：US20120162833A1

    公开(公告)日：2012-06-28

    申请号：US12979635

    申请日：2010-12-28

    申请人： Christian Russ ,  Werner Hoellinger ,  Bernhard Stein

    发明人： Christian Russ ,  Werner Hoellinger ,  Bernhard Stein

    IPC分类号： H02H9/04

    CPC分类号： H02H9/046

    摘要： Various embodiments described below relate to an ESD protection device that includes a voltage controlled shunt (e.g., a transistor) to selectively shunt energy of an incoming ESD pulse away from a circuit that includes a semiconductor device to be protected. In some embodiments, the ESD protection device includes a power up detection element to determine whether the circuit has powered up. If the circuit is powered up, the power up detection element prevents inadvertent triggering of the ESD protection device.

    摘要翻译： 下面描述的各种实施例涉及ESD保护装置，其包括电压控制分流器（例如，晶体管），以便选择性地将输入的ESD脉冲的能量远离包括待保护的半导体器件的电路分流。 在一些实施例中，ESD保护装置包括用于确定电路是否通电的上电检测元件。 如果电路通电，则上电检测元件可防止ESD保护器件的意外触发。

    Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using High Voltage Devices
    3.
    发明申请
    Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using High Voltage Devices 有权
    选择性电流泵浦以增强使用高压器件的低电压ESD钳位

    公开(公告)号：US20130250461A1

    公开(公告)日：2013-09-26

    申请号：US13429577

    申请日：2012-03-26

    申请人： Mayank Shrivastava ,  Christian Russ ,  Harald Gossner

    发明人： Mayank Shrivastava ,  Christian Russ ,  Harald Gossner

    IPC分类号： H02H9/04

    CPC分类号： H02H9/046

    摘要： Some embodiments relate to an electrostatic discharge (ESD) protection device to protect a circuit from an ESD event. The ESD protection device includes first and second trigger elements. Upon detecting an ESD pulse, the first trigger element provides a first trigger signal having a first pulse length. The second trigger element, upon detecting the ESD pulse, provides a second trigger signal having a second pulse length. The second pulse length is different from the first pulse length. A primary shunt shunts power of the ESD pulse away from the ESD susceptible circuit based on the first trigger signal. A current control element selectively pumps current due to the ESD pulse into a substrate of the primary shunt based on the second trigger signal.

    摘要翻译： 一些实施例涉及用于保护电路免受ESD事件的静电放电（ESD）保护装置。 ESD保护装置包括第一和第二触发元件。 在检测到ESD脉冲时，第一触发元件提供具有第一脉冲长度的第一触发信号。 第二触发元件在检测到ESD脉冲时提供具有第二脉冲长度的第二触发信号。 第二脉冲长度与第一脉冲长度不同。 基于第一触发信号，主分流器将ESD脉冲的功率分配离开ESD敏感电路。 电流控制元件基于第二触发信号选择性地将由于ESD脉冲引起的电流泵送到主分流器的衬底中。

    Electrostatic discharge protection element
    5.
    发明授权
    Electrostatic discharge protection element 有权
    静电放电保护元件

    公开(公告)号：US07919816B2

    公开(公告)日：2011-04-05

    申请号：US11506683

    申请日：2006-08-18

    申请人： Harald Gossner ,  Christian Russ

    发明人： Harald Gossner ,  Christian Russ

    IPC分类号： H01L23/62

    CPC分类号： H01L27/1211 ,  H01L27/0288 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/8086 ,  H01L2029/7857

    摘要： A gate controlled fin resistance element for use as an electrostatic discharge (ESD) protection element in an electrical circuit has a fin structure having a first connection region, a second connection region and a channel region formed between the first and second connection regions. Furthermore, the fin resistance element has a gate region formed at least over a part of the surface of the channel region. The gate region is electrically coupled to a gate control device, which gate control device controls an electrical potential applied to the gate region in such a way that the gate controlled fin resistance element has a high electrical resistance during a first operating state of the electrical circuit and a lower electrical resistance during a second operating state, which is characterized by the occurrence of an ESD event.

    摘要翻译： 在电路中用作静电放电（ESD）保护元件的栅极控制鳍电阻元件具有鳍状结构，其具有形成在第一和第二连接区域之间的第一连接区域，第二连接区域和沟道区域。 此外，散热片电阻元件具有形成在通道区域的表面的至少一部分上的栅极区域。 栅极区域电耦合到栅极控制装置，栅极控制装置控制施加到栅极区域的电位，使得栅极控制的鳍状电阻元件在电路的第一操作状态期间具有高电阻 并且在第二操作状态期间具有较低的电阻，其特征在于发生ESD事件。

    VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH
    8.
    发明申请
    VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH 有权
    通过选择性外延生长形成硅的垂直二极管

    公开(公告)号：US20090085163A1

    公开(公告)日：2009-04-02

    申请号：US11862964

    申请日：2007-09-27

    申请人： Christian Russ ,  Christian Pacha ,  Snezana Jenei ,  Klaus Schruefer

    发明人： Christian Russ ,  Christian Pacha ,  Snezana Jenei ,  Klaus Schruefer

    IPC分类号： H01L29/861 ,  H01L21/329

    CPC分类号： H01L29/861 ,  H01L29/6609 ,  H01L29/66356 ,  H01L29/7391

    摘要： Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated vertical diode for a finned semiconductor apparatus. Process embodiments include the formation of vertical-diode apparatus.

    摘要翻译： 一些实施例涉及在半导体本体和设置在半导体本体的掺杂区域上的外延膜之间出现垂直二极管活性的装置。 一些实施例包括引起垂直和横向二极管活动的装置。 一些实施例包括用于翅片半导体装置的门控垂直二极管。 工艺实施例包括形成垂直二极管装置。

    ESD protection element and ESD protection device for use in an electrical circuit
    10.
    发明申请
    ESD protection element and ESD protection device for use in an electrical circuit 有权
    ESD保护元件和用于电路的ESD保护器件

    公开(公告)号：US20070262386A1

    公开(公告)日：2007-11-15

    申请号：US11803169

    申请日：2007-05-11

    申请人： Harald Gossner ,  Christian Russ

    发明人： Harald Gossner ,  Christian Russ

    IPC分类号： H01L23/62

    CPC分类号： H01L23/60 ,  H01L27/0262 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/749 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An ESD protection element for use in an electrical circuit having a fin structure or a fully depleted silicon-on-insulator structure. The fin structure or the fully depleted silicon-on-insulator structure contains a first connection region having a first conductivity type; a second connection region having a second conductivity type, which is opposite to the first conductivity type; and also a plurality of body regions which are formed alongside one another and which are formed between the first connection region and the second connection region. The body regions alternately have the first conductivity type and the second conductivity type. The ESD protection element has at least one gate region formed on or above at least one of the plurality of body regions, and also at least one gate control device which is electrically coupled to the at least one gate region.

    摘要翻译： 一种用于具有翅片结构或完全耗尽的绝缘体上硅结构的电路中的ESD保护元件。 翅片结构或完全耗尽的绝缘体上的结构包含具有第一导电类型的第一连接区域; 具有与第一导电类型相反的第二导电类型的第二连接区域; 以及形成在第一连接区域和第二连接区域之间的多个体区域。 身体区域交替地具有第一导电类型和第二导电类型。 ESD保护元件具有形成在多个主体区域中的至少一个上方或上方的至少一个栅极区域，以及至少一个电连接至该至少一个栅极区域的栅极控制装置。