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    Eukaryotic cell division genes and their use in diagnosis and treatment of proliferative diseases
    7.
    发明授权
    Eukaryotic cell division genes and their use in diagnosis and treatment of proliferative diseases 失效
    真核细胞分裂基因及其在增殖性疾病诊断和治疗中的应用

    公开(公告)号：US07368248B2

    公开(公告)日：2008-05-06

    申请号：US10415657

    申请日：2001-11-09

    申请人： Christophe Echeverri ,  Pierre Goenczy ,  Anthony Hyman ,  Steven Jones ,  Karen Oegema ,  Matthew Kirkham

    发明人： Christophe Echeverri ,  Pierre Goenczy ,  Anthony Hyman ,  Steven Jones ,  Karen Oegema ,  Matthew Kirkham

    IPC分类号： G01N33/53

    CPC分类号： C07K14/43545 ,  A61K38/00

    摘要： The present invention relates to the significant functional role of several C. elegans genes and of their corresponding gene products in cell division and proliferation processes that could be identified by means of RNA-medicated interference (RNAi) and to the identification and isolation of functional orthologues of said genes including all biologically-active derivatives thereof. The invention further relates to the use of said gene products (including said orthologues) in the development or isolation of anti-proliferative agents, particularly their use in appropriate screening assays, and their use for diagnosis and treatment of proliferative diseases.

    摘要翻译： 本发明涉及几种秀丽隐杆线虫基因及其相应基因产物在细胞分裂和增殖过程中的重要功能作用，可以通过RNA药物干扰（RNAi）和识别和分离功能性直向同源物 的所述基因，包括其所有生物活性衍生物。 本发明还涉及所述基因产物（包括所述直系同源物）在抗增殖剂的开发或分离中的用途，特别是其在适当的筛选测定中的用途，以及它们在增殖性疾病的诊断和治疗中的应用。

    Forming CMOS with close proximity stressors
    10.
    发明授权
    Forming CMOS with close proximity stressors 有权
    形成具有接近应力的CMOS

    公开(公告)号：US09041119B2

    公开(公告)日：2015-05-26

    申请号：US13465159

    申请日：2012-05-07

    申请人： Desmond J. Donegan, Jr. ,  Abhishek Dube ,  Steven Jones ,  Jophy S. Koshy ,  Viorel Ontalus

    发明人： Desmond J. Donegan, Jr. ,  Abhishek Dube ,  Steven Jones ,  Jophy S. Koshy ,  Viorel Ontalus

    IPC分类号： H01L29/02 ,  H01L29/78 ,  H01L29/66

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66628 ,  H01L29/66636

    摘要： A method of forming transistors with close proximity stressors to channel regions of the transistors is provided. The method includes forming a first transistor, in a first region of a substrate, having a gate stack on top of the first region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the first region including a source and drain region of the first transistor; forming a second transistor, in a second region of the substrate, having a gate stack on top of the second region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the second region including a source and drain region of the second transistor; covering the first transistor with a photo-resist mask without covering the second transistor; creating recesses in the source and drain regions of the second transistor; and forming stressors in the recesses.

    摘要翻译： 提供了一种形成具有接近应力的晶体管到晶体管的沟道区域的方法。 该方法包括在衬底的第一区域中形成第一晶体管，在衬底的第一区域的顶部上具有栅极叠层，以及邻近栅堆叠的侧壁的一组间隔物，第一区域包括源极和漏极 第一晶体管的区域; 在所述衬底的第二区域中形成第二晶体管，在所述衬底的所述第二区域的顶部上具有栅极叠层，以及邻近所述栅极叠层的侧壁的一组间隔区，所述第二区域包括所述栅极叠层的源极和漏极区域 第二晶体管; 用光致抗蚀剂掩模覆盖第一晶体管而不覆盖第二晶体管; 在所述第二晶体管的源极和漏极区域中产生凹陷; 并在凹槽中形成应力源。