公开(公告)号：US20050127027A1

公开(公告)日：2005-06-16

申请号：US10734361

申请日：2003-12-11

申请人： Christopher Bergevin ,  Hung-Chin Guthrie ,  Tom Harris ,  Ming Jiang ,  John Yang

发明人： Christopher Bergevin ,  Hung-Chin Guthrie ,  Tom Harris ,  Ming Jiang ,  John Yang

IPC分类号： B24B37/04 ,  B44C1/22 ,  C09K3/14 ,  G11B5/31

CPC分类号： G11B5/3163 ,  B24B37/044 ,  C09K3/1472

摘要： A method of manufacture of magnetic heads which include CoFe elements using CMP is presented. The method includes providing a slurry of Al2O3, adjusting the concentration of H2O2 in said slurry to within a range of 6-12% by volume and balancing mechanical polishing action. The balancing is done by adjusting the table speed of a mechanical polisher to within a range of 55-90 rpm, and adjusting polishing pressure to within a range of 5-7 psi. Also a magnetic head having elements made of CoFe material made by this method is disclosed.

摘要翻译： 提出了使用CMP制造包括CoFe元素的磁头的制造方法。 该方法包括提供Al 2 N 3 O 3的浆料，调节所述的二氧化钛的浓度 浆料在6-12体积％的范围内，并平衡机械抛光作用。 通过将机械抛光机的工作台速度调节到55-90rpm的范围内并且将抛光压力调节到5-7psi的范围内来进行平衡。 还公开了一种具有由该方法制成的由CoFe材料制成的元件的磁头。

公开(公告)号：US20060154573A1

公开(公告)日：2006-07-13

申请号：US11034340

申请日：2005-01-11

申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  John Yang

发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  John Yang

IPC分类号： B24B1/00

CPC分类号： B24B37/24 ,  B24B37/042 ,  B24B49/16

摘要： A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.

摘要翻译： 一种具有高纵横比表面形貌的化学机械抛光（CMP）晶片的方法。 晶片位于板上。 抛光垫联接到压板。 在抛光垫和晶片之间添加抛光溶液（例如浆料）。 通过在抛光垫和晶片之间产生相对移动来在晶片上执行CMP。 抛光垫基本上从通道中去除所有残留的材料。 为了实现这一点，抛光垫在约4psi的抛光压力下具有至少5％的压缩率。

公开(公告)号：US20050189319A1

公开(公告)日：2005-09-01

申请号：US10789777

申请日：2004-02-27

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  John Yang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  John Yang

IPC分类号： B44C1/22 ,  C23F1/00 ,  C23F3/04 ,  G11B5/17 ,  G11B5/31 ,  H01L21/321

CPC分类号： H01L21/3212 ,  C23F3/04 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/4906 ,  Y10T29/49064

摘要： A Chemical Mechanical Polish (CMP) process and slurry therefore slurry that is capable of removing NiFe, SiO2, Photoresist, Ta, alumina and Cu at substantially the same rate. The slurry is useful for obtaining a substantially planar surface of several materials while avoiding corrosion of Cu coil and NiFe structure.

摘要翻译： 化学机械抛光（CMP）工艺和浆料，因此能够以基本相同的速率去除NiFe，SiO 2，光致抗蚀剂，Ta，氧化铝和Cu。 该浆料可用于获得几种材料的基本平坦的表面，同时避免Cu线圈和NiFe结构的腐蚀。

公开(公告)号：US20070181151A1

公开(公告)日：2007-08-09

申请号：US11350643

申请日：2006-02-09

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Nick Lara ,  John Yang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Nick Lara ,  John Yang

IPC分类号： C23G1/00 ,  B08B7/00 ,  B08B3/00

CPC分类号： C23G1/26 ,  G11B5/3163 ,  G11B5/3169 ,  Y10S134/902

摘要： A solution of ammonium citrate and benzotriazole (BTA) is used to clean thin film magnetic head wafers. When used with brushing, the solution is a highly efficient process for removing particles, such as those generated during chemical-mechanical polishing (CMP), without causing corrosion and roughness. This process may be used on all CMP layers in thin film magnetic head wafer fabrication.

摘要翻译： 柠檬酸铵和苯并三唑（BTA）的溶液用于清洗薄膜磁头晶片。 当与刷涂一起使用时，该溶液是用于去除颗粒的高效方法，例如在化学机械抛光（CMP）期间产生的颗粒，而不会引起腐蚀和粗糙度。 该方法可用于薄膜磁头晶片制造中的所有CMP层。

公开(公告)号：US07804662B2

公开(公告)日：2010-09-28

申请号：US11645390

申请日：2006-12-26

申请人： Tsung Yuan Chen ,  Hung-Chin Guthrie ,  Yimin Hsu ,  Ming Jiang

发明人： Tsung Yuan Chen ,  Hung-Chin Guthrie ,  Yimin Hsu ,  Ming Jiang

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： In a perpendicular recording head, a notch is formed in the top write gap at a location on top of the main pole. A perpendicular head with this notched top write gap structure has less transition curvature and better writability while reducing the adjacent track interference (ATI). Also, the process used to fabricate the head ensures that the trailing edge (writing edge) of the main pole is extremely flat with no corner rounding.

摘要翻译： 在垂直记录头中，在主极顶部的位置处，在顶部写入间隙中形成凹口。 具有该切口顶部写入间隙结构的垂直头部具有较小的转变曲率和较好的可编写性，同时减小了相邻的轨道干涉（ATI）。 此外，用于制造头的过程确保主极的后缘（书写边缘）非常平坦，没有圆角。

公开(公告)号：US07722436B2

公开(公告)日：2010-05-25

申请号：US11832455

申请日：2007-08-01

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

IPC分类号： B24B49/00

CPC分类号： B24B49/03 ,  B24B37/042

摘要： During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

摘要翻译： 在晶片的平坦化期间，在通过化学机械抛光对晶片进行平面化之后，在多个位置测量晶片层的厚度。 厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型，控制称为“后侧压力”的化学机械抛光的参数。背面压力在一些实施例中通过基于 中心到边缘轮廓模型，模型的确定系数R平方和背侧压力的当前值。 注意，仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。 如R平方所示大于预定极限。 接下来，将从模型确定的背面压力用于平面化后续晶片。

公开(公告)号：US07514016B2

公开(公告)日：2009-04-07

申请号：US10903833

申请日：2004-07-30

申请人： Hung-Chin Guthrie ,  Ming Jiang

发明人： Hung-Chin Guthrie ,  Ming Jiang

IPC分类号： B24B1/00 ,  H01L21/00

CPC分类号： C03C15/00 ,  C03C19/00 ,  G11B5/8404

摘要： A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession and trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density thin film magnetic heads for hard disk drives (HDD). With a fine chemical mechanical nanogrinding process, PTR can be improved to a mean of about 0.5 nm.

摘要翻译： 化学 - 机械纳米研磨工艺实现近零极点尖端衰退（PTR），以最小化头部换能器的磁空间损失，使介质间隔损耗，氧化铝凹陷和后缘轮廓变化最小化，并且平滑表面光洁度，同时具有跨多层 薄膜和硬质基板，以满足硬盘驱动器（HDD）的高密度薄膜磁头的要求。 通过精细的化学机械纳米研磨工艺，PTR可以提高到约0.5nm的平均值。

公开(公告)号：US20080274623A1

公开(公告)日：2008-11-06

申请号：US11743404

申请日：2007-05-02

申请人： Hung-Chin Guthrie ,  Ying Hong ,  Ming Jiang

发明人： Hung-Chin Guthrie ,  Ying Hong ,  Ming Jiang

IPC分类号： H01L21/302

CPC分类号： G11B5/3163 ,  G11B5/3169

摘要： Methods for fabricating TMR and CPP GMR magnetic heads using a chemical mechanical polishing (CMP) process with a patterned CMP conductive protective layer for sensor stripe height patterning. The method comprises defining a stripe height of a read sensor of a magnetic head reader. The method further comprises refill depositing an insulator layer on the read sensor. The method further comprises performing a CMP process down to the conductive protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the insulator layer above the conductive protective layer and to remove a sensor pattern masking structure on the conductive protective layer. As a result, the insulator layer is planarized and smooth with the read sensor, eliminating fencing and alumina bumps typically encountered in the insulator layer at the edge of the patterned sensor.

摘要翻译： 使用化学机械抛光（CMP）工艺制造TMR和CPP GMR磁头的方法，具有用于传感器条纹高度图案化的图案化CMP导电保护层。 该方法包括定义磁头读取器的读取传感器的条带高度。 该方法还包括在读取的传感器上填充沉积绝缘体层。 该方法还包括在限定读取的传感器的同时，在读取的传感器上执行CMP处理，以去除传感器保护层上方的绝缘体层的过度填充部分，并且去除导电保护层上的传感器图案掩蔽结构 层。 结果，绝缘体层与读取传感器平坦化并且平滑，消除了在图案化传感器的边缘处的绝缘体层中通常遇到的栅栏和氧化铝凸块。

公开(公告)号：US20070258167A1

公开(公告)日：2007-11-08

申请号：US11411556

申请日：2006-04-25

申请人： Donald Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Wen-Chien Hsiao ,  Yimin Hsu ,  Ming Jiang ,  Yinshi Liu ,  Aron Neuhaus ,  Vladimir Nikitin ,  Aron Pentek ,  Katalin Pentek ,  Yi Zheng

发明人： Donald Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Wen-Chien Hsiao ,  Yimin Hsu ,  Ming Jiang ,  Yinshi Liu ,  Aron Neuhaus ,  Vladimir Nikitin ,  Aron Pentek ,  Katalin Pentek ,  Yi Zheng

IPC分类号： G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/3146 ,  G11B5/315 ,  G11B5/3163

摘要： A magnetic write head for perpendicular magnetic recording having a write pole with a concave trailing edge. The magnetic write pole can have a trapezoidal shape with first and second laterally opposed sides that are further apart at the trailing edge than at the leading edge. The write head may or may not include a magnetic trailing shield, and if a trailing shield is included it is separated from the trailing edge by a non-magnetic write gap layer. The concave trailing edge improves magnetic performance such as by improving the transition curvature. A method for constructing the write head includes forming a magnetic write pole by forming a mask structure over a deposited write pole material, the mask structure having an alumina hard mask and an image transfer layer such as DURAMIDE®. An alumina fill layer is then deposited and a chemical mechanical polish is performed to open up the image transfer layer. A reactive on etch is performed to remove the image transfer layer and a reactive ion mill or reactive ion etch is performed to remove the alumina hard mask and form a concave surface on the write pole.

摘要翻译： 用于垂直磁记录的磁写头，具有带有凹后缘的写极。 磁性写入极可以具有梯形形状，其中第一和第二横向相对侧在后缘处比在前缘处更远地分开。 写头可以包括或可以不包括磁性后屏蔽，并且如果包括后屏蔽，则其通过非磁性写间隙层与后缘分离。 凹形后边缘提高磁性能，例如通过改善转变曲率。 构成写入头的方法包括通过在沉积的写入极材料上形成掩模结构来形成磁性写入极，掩模结构具有氧化铝硬掩模和诸如DURAMIDE的图像转移层。 然后沉积氧化铝填充层，并执行化学机械抛光以打开图像转印层。 执行反应性蚀刻以去除图像转印层，并且执行反应性离子磨或反应离子蚀刻以除去氧化铝硬掩模并在写入极上形成凹面。

公开(公告)号：US07279424B2

公开(公告)日：2007-10-09

申请号：US10928002

申请日：2004-08-27

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

IPC分类号： H01L21/302

CPC分类号： B82Y25/00 ,  G11B5/3163 ,  G11B5/3169

摘要： A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.

摘要翻译： 描述了使用具有二氧化硅停止层的所选CMP浆料进行薄膜处理的方法。 浆料包括研磨剂，优选氧化铝，腐蚀抑制剂，优选苯并三唑（BTA）和优选过氧化氢的氧化剂。 该方法对于制造其中使用氧化铝作为电介质的薄膜头特别有用。 该方法可用于平面化由磁头中的氧化铝包围的金属结构。 氧化铝填充物沉积到稍低于金属高度的最终目标高度。 在氧化铝上沉积薄的二氧化硅阻挡层。 使用所选择的浆料执行CMP以将晶片平坦化到停止层。 优选地，仅剩下可忽略量的止挡层，并且金属结构的高度与再填充氧化铝的沉积高度基本相同。