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    Gentle chemical mechanical polishing (CMP) liftoff process
    1.
    发明申请
    Gentle chemical mechanical polishing (CMP) liftoff process 失效
    温和化学机械抛光（CMP）剥离工艺

    公开(公告)号：US20060154573A1

    公开(公告)日：2006-07-13

    申请号：US11034340

    申请日：2005-01-11

    申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  John Yang

    发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  John Yang

    IPC分类号： B24B1/00

    CPC分类号： B24B37/24 ,  B24B37/042 ,  B24B49/16

    摘要： A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.

    摘要翻译： 一种具有高纵横比表面形貌的化学机械抛光（CMP）晶片的方法。 晶片位于板上。 抛光垫联接到压板。 在抛光垫和晶片之间添加抛光溶液（例如浆料）。 通过在抛光垫和晶片之间产生相对移动来在晶片上执行CMP。 抛光垫基本上从通道中去除所有残留的材料。 为了实现这一点，抛光垫在约4psi的抛光压力下具有至少5％的压缩率。

    Gentle chemical mechanical polishing (CMP) liftoff process
    2.
    发明授权
    Gentle chemical mechanical polishing (CMP) liftoff process 失效
    温和化学机械抛光（CMP）剥离工艺

    公开(公告)号：US07220167B2

    公开(公告)日：2007-05-22

    申请号：US11034340

    申请日：2005-01-11

    申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  John Jaekoyun Yang

    发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  John Jaekoyun Yang

    IPC分类号： B24B1/00

    CPC分类号： B24B37/24 ,  B24B37/042 ,  B24B49/16

    摘要： A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.

    摘要翻译： 一种具有高纵横比表面形貌的化学机械抛光（CMP）晶片的方法。 晶片位于板上。 抛光垫联接到压板。 在抛光垫和晶片之间添加抛光溶液（例如浆料）。 通过在抛光垫和晶片之间产生相对移动来在晶片上执行CMP。 抛光垫基本上从通道中去除所有残留的材料。 为了实现这一点，抛光垫在约4psi的抛光压力下具有至少5％的压缩率。

    Copper damascene chemical mechanical polishing (CMP) for thin film head writer fabrication
    4.
    发明申请
    Copper damascene chemical mechanical polishing (CMP) for thin film head writer fabrication 失效
    铜大马士革化学机械抛光（CMP）用于薄膜头写入器制造

    公开(公告)号：US20080096389A1

    公开(公告)日：2008-04-24

    申请号：US11584027

    申请日：2006-10-20

    申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  Sue Siyang Zhang

    发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  Sue Siyang Zhang

    IPC分类号： H01L21/461 ,  H01L21/302 ,  C23F1/00

    CPC分类号： C23F3/06 ,  C09G1/02 ,  C23F3/04 ,  C25D5/02 ,  G11B5/3163 ,  G11B5/3169

    摘要： In one method and embodiment of the present invention, at least one coil layer is formed in a write head, using a two-slurry step of copper damascene chemical mechanical polishing method with a first slurry step removing the undesirable copper that is on top of the tantalum barrier layer and on top of the trenches and a second slurry step removing the remainder of the undesirable copper, the tantalum barrier layer, the silicon dioxide hard mask layer, the hard baked photoresist layer, the magnetic alloy such as NiFe, CoFe, or CoNiFe, and alumina insulating layer for better thin film magnetic head performances.

    摘要翻译： 在本发明的一个方法和实施例中，使用铜镶嵌化学机械抛光方法的双浆步骤，在写头中形成至少一个线圈层，其中第一浆料步骤除去位于 钽阻挡层并且在沟槽的顶部上，第二浆料步骤除去不需要的铜，钽阻挡层，二氧化硅硬掩模层，硬烘焙光致抗蚀剂层，磁性合金如NiFe，CoFe或 CoNiFe和氧化铝绝缘层，用于更好的薄膜磁头性能。

    Method for aligning wafers within wafer processing equipment
    5.
    发明授权
    Method for aligning wafers within wafer processing equipment 失效
    在晶片处理设备内对准晶片的方法

    公开(公告)号：US08500916B2

    公开(公告)日：2013-08-06

    申请号：US10982029

    申请日：2004-11-05

    申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Quang Le ,  James Nystrom

    发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Quang Le ,  James Nystrom

    IPC分类号： B08B3/00

    CPC分类号： B08B11/02 ,  B08B3/02 ,  H01L21/67051 ,  H01L21/68

    摘要： Systems and methods for aligning wafers within wafer processing equipment. In a first embodiment, a wafer alignment nozzle comprises a fixed cylindrical member. A moveable cylindrical member is disposed with the fixed cylindrical member in a sliding fit. The moveable cylindrical member comprises a plurality of angled fluid orifices for directing a plurality of streams of the fluid onto a surface of the wafer.

    摘要翻译： 将晶片对准晶片加工设备的系统和方法。 在第一实施例中，晶片对准喷嘴包括固定圆柱形构件。 可移动的圆柱形构件以固定的圆柱形构件滑动配合设置。 可移动圆柱形构件包括多个成角度的流体孔，用于将多个流体流引导到晶片的表面上。

    System and method for aligning wafers within wafer processing equipment
    6.
    发明申请
    System and method for aligning wafers within wafer processing equipment 失效
    在晶片加工设备中对准晶片的系统和方法

    公开(公告)号：US20060096612A1

    公开(公告)日：2006-05-11

    申请号：US10982029

    申请日：2004-11-05

    申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Quang Le ,  James Nystrom

    发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Quang Le ,  James Nystrom

    IPC分类号： C23G1/00 ,  B08B3/00

    CPC分类号： B08B11/02 ,  B08B3/02 ,  H01L21/67051 ,  H01L21/68

    摘要： Systems and methods for aligning wafers within wafer processing equipment. In a first embodiment, a wafer alignment nozzle comprises a fixed cylindrical member. A moveable cylindrical member is disposed with the fixed cylindrical member in a sliding fit. The moveable cylindrical member comprises a plurality of angled fluid orifices for directing a plurality of streams of the fluid onto a surface of the wafer.

    摘要翻译： 将晶片对准晶片加工设备的系统和方法。 在第一实施例中，晶片对准喷嘴包括固定圆柱形构件。 可移动的圆柱形构件以固定的圆柱形构件滑动配合设置。 可移动圆柱形构件包括多个成角度的流体孔，用于将多个流体流引导到晶片的表面上。

    System and method for aligning wafers
    7.
    发明申请
    System and method for aligning wafers 审中-公开
    用于对准晶片的系统和方法

    公开(公告)号：US20060066333A1

    公开(公告)日：2006-03-30

    申请号：US10956801

    申请日：2004-09-30

    申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  James Nystrom

    发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  James Nystrom

    IPC分类号： G01R31/02

    CPC分类号： G01R31/2831 ,  G01R31/2893

    摘要： Systems and methods for aligning wafers. A first method provides for placing a wafer carrier comprising a mis-aligned wafer into an acceptance port. A wafer alignment fixture is moved relative to the wafer carrier and perpendicular to the plane of the mis-aligned wafer. The wafer alignment fixture comprises a spring action member. A force from said spring action member is exerted upon the mis-aligned wafer to achieve a desirable alignment of the mis-aligned wafer within the wafer carrier.

    摘要翻译： 用于对准晶片的系统和方法 第一种方法提供将包含错误对准的晶片的晶片载体放置在接受端口中。 晶片对准夹具相对于晶片载体移动并垂直于错误对准晶片的平面。 晶片对准夹具包括弹簧作用构件。 来自所述弹簧作用构件的力施加在错误对准的晶片上，以实现晶片载体内错误对准晶片的期望对准。

    CMP for corrosion-free CoFe elements for magnetic heads
    8.
    发明申请
    CMP for corrosion-free CoFe elements for magnetic heads 有权
    CMP用于磁头的无腐蚀CoFe元件

    公开(公告)号：US20050127027A1

    公开(公告)日：2005-06-16

    申请号：US10734361

    申请日：2003-12-11

    申请人： Christopher Bergevin ,  Hung-Chin Guthrie ,  Tom Harris ,  Ming Jiang ,  John Yang

    发明人： Christopher Bergevin ,  Hung-Chin Guthrie ,  Tom Harris ,  Ming Jiang ,  John Yang

    IPC分类号： B24B37/04 ,  B44C1/22 ,  C09K3/14 ,  G11B5/31

    CPC分类号： G11B5/3163 ,  B24B37/044 ,  C09K3/1472

    摘要： A method of manufacture of magnetic heads which include CoFe elements using CMP is presented. The method includes providing a slurry of Al2O3, adjusting the concentration of H2O2 in said slurry to within a range of 6-12% by volume and balancing mechanical polishing action. The balancing is done by adjusting the table speed of a mechanical polisher to within a range of 55-90 rpm, and adjusting polishing pressure to within a range of 5-7 psi. Also a magnetic head having elements made of CoFe material made by this method is disclosed.

    摘要翻译： 提出了使用CMP制造包括CoFe元素的磁头的制造方法。 该方法包括提供Al 2 N 3 O 3的浆料，调节所述的二氧化钛的浓度 浆料在6-12体积％的范围内，并平衡机械抛光作用。 通过将机械抛光机的工作台速度调节到55-90rpm的范围内并且将抛光压力调节到5-7psi的范围内来进行平衡。 还公开了一种具有由该方法制成的由CoFe材料制成的元件的磁头。