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1.发明授权Fast diazoquinone positive resists comprising mixed esters of 4-sulfonate and 5-sulfonate compounds 失效快速重氮醌正抗蚀剂，其包含4-磺酸盐和5-磺酸盐化合物的混合酯
公开(公告)号：US5362599A
公开(公告)日：1994-11-08
申请号：US792115
申请日：1991-11-14
申请人： Christopher J. Knors , Steve S. Miura , Melvin W. Montgomery , Wayne M. Moreau , Randolph J. Smith
发明人： Christopher J. Knors , Steve S. Miura , Melvin W. Montgomery , Wayne M. Moreau , Randolph J. Smith
IPC分类号： G03F7/022 , H01L21/027 , G03F7/023 , G03F7/30
CPC分类号： G03F7/022
摘要： Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.
摘要翻译： 公开了正性光致抗蚀剂组合物和使用光致抗蚀剂组合物在制造半导体器件中制造亚微米图案的方法。 光致抗蚀剂含有混合萘醌二叠氮化物双和三（一，二和三羟基苯基）烷烃的4-和5-磺酸酯的敏化剂。
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2.发明授权Photoresist composition including polyalkylmethacrylate co-polymer of polyhydroxystyrene 失效包含聚羟基苯乙烯的聚甲基丙烯酸甲酯共聚物的光致抗蚀剂组合物
公开(公告)号：US5561194A
公开(公告)日：1996-10-01
申请号：US412806
申请日：1995-03-29
申请人： Kathleen M. Cornett , Judy B. Dorn , Margaret C. Lawson , Leo L. Linehan , Wayne M. Moreau , Randolph J. Smith , Gary T. Spinillo
发明人： Kathleen M. Cornett , Judy B. Dorn , Margaret C. Lawson , Leo L. Linehan , Wayne M. Moreau , Randolph J. Smith , Gary T. Spinillo
CPC分类号： G03F7/0233
摘要： A polyalkylmethacrylate co-polymer of polyhydroxystyrene has been found to be an ideal blending partner in a novolak photoresist composition. The preferred co-polymer is poly(p-hydroxystyrene)-co-(methyl methacrylate). The co-polymer is fully miscible with novolaks and has a high thermal stability (>150.degree. C.).
摘要翻译： 已经发现聚羟基苯乙烯的聚烷基甲基丙烯酸酯共聚物在酚醛清漆光致抗蚀剂组合物中是理想的掺合配合物。 优选的共聚物是聚（对羟基苯乙烯） - 共 - （甲基丙烯酸甲酯）。 共聚物与酚醛清漆完全混溶，具有高热稳定性（> 150℃）。
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公开(公告)号：US6136498A
公开(公告)日：2000-10-24
申请号：US672804
申请日：1996-06-28
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038 , Y10S430/106 , Y10S430/111 , Y10S430/116 , Y10S430/123 , Y10S430/127 , Y10S430/128
摘要： A photoresist composition for use in lithographic processes in the fabrication of semiconductor devices such as integrated circuit structures is disclosed. The photoresist composition includes a monomeric sensitizer bounding to a base-soluble long chain polymer.
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公开(公告)号：US06383712B1
公开(公告)日：2002-05-07
申请号：US09092596
申请日：1998-06-05
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038 , G03F7/0382 , G03F7/039 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： A photoresist composition for use in lithographic processes in the fabrication of semiconductor devices such as integrated circuit structures is disclosed. The photoresist composition includes a monomeric sensitizer bounding to a base-soluble long chain polymer.
摘要翻译： 公开了用于制造半导体器件如集成电路结构的光刻工艺中的光致抗蚀剂组合物。 光致抗蚀剂组合物包括与碱溶性长链聚合物结合的单体敏化剂。
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5.发明授权Photo acid generator compounds, photo resists, and method for improving bias 失效照片酸发生剂化合物，光致抗蚀剂和改善偏压的方法
公开(公告)号：US6074800A
公开(公告)日：2000-06-13
申请号：US64955
申请日：1998-04-23
申请人： Gregory Breyta , Phillip J. Brock , Daniel J. Dawson , Ronald A. DellaGuardia , Charlotte R. DeWan , Andrew R. Eckert , Hiroshi Ito , Premlatha Jagannathan , Leo L. Linehan , Kathleen H. Martinek , Wayne M. Moreau , Randolph J. Smith
发明人： Gregory Breyta , Phillip J. Brock , Daniel J. Dawson , Ronald A. DellaGuardia , Charlotte R. DeWan , Andrew R. Eckert , Hiroshi Ito , Premlatha Jagannathan , Leo L. Linehan , Kathleen H. Martinek , Wayne M. Moreau , Randolph J. Smith
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , Y10S430/115
摘要： Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.
摘要翻译： 提供了几个中等紫外光酸产生剂（PAG），化学放大光抗蚀剂（CAMP）和改进嵌套到隔离线偏压的方法。 类似地，也可以提高照相速度。 与传统的中等紫外线PAG不同，本发明的PAG化合物，抗蚀剂组合物和方法不需要中等紫外线敏化剂。 具体地说，提供了能够承受中等紫外线辐射，特别是I线的发色团的PAG，并且适合用于光速为500mJ / cm 2以下但优选为200mJ / cm 2的化学放大型光致抗蚀剂的PAG， cm2以下。 例如，PAG可以是锍或碘鎓盐，例如蒽基，丁基，甲基锍三氟甲磺酸酯和双（4-叔丁基苯基）碘9,10-二甲氧基蒽磺酸盐。 形成PAG的一部分的发色团可以选自多芳族烃，例如氯仿，芘，荧蒽，蒽，二苯甲酮，噻吨酮，蒽和菲，但优选为蒽。
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6.发明授权Crosslinkable aqueous developable photoresist compositions and method for use thereof 失效可交联水性可显影光致抗蚀剂组合物及其使用方法
公开(公告)号：US5296332A
公开(公告)日：1994-03-22
申请号：US796155
申请日：1991-11-22
申请人： Harbans S. Sachdev , Willard E. Conley , Premlatha Jagannathan , Ahmad D. Katnani , Ranee W. Kwong , Leo L. Linehan , Steve S. Muira , Randolph J. Smith
发明人： Harbans S. Sachdev , Willard E. Conley , Premlatha Jagannathan , Ahmad D. Katnani , Ranee W. Kwong , Leo L. Linehan , Steve S. Muira , Randolph J. Smith
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/038
摘要： High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.
摘要翻译： 用于深UV，i线电子束和x射线光刻的高灵敏度，高对比度，热稳定抗蚀剂组合物。 这些组合物包括具有用于亲电取代活化的芳环的成膜聚合物，形成羟基稳定的碳鎓离子的酸催化交联剂和光酸产生剂。 组合物是可显影的水性基质。
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公开(公告)号：USD323383S
公开(公告)日：1992-01-21
申请号：US285889
申请日：1988-12-16
申请人： Jerome A. Keays , Randolph J. Smith
设计人： Jerome A. Keays , Randolph J. Smith
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