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13 条记录 (耗时 0.026 秒)

    Method of reshaping a patterned organic photoresist surface
    6.
    发明授权
    Method of reshaping a patterned organic photoresist surface 失效

    公开(公告)号：US06582861B2

    公开(公告)日：2003-06-24

    申请号：US09811186

    申请日：2001-03-16

    申请人： Alex Buxbaum ,  Melvin W. Montgomery

    发明人： Alex Buxbaum ,  Melvin W. Montgomery

    IPC分类号： G03F900

    CPC分类号： G03F7/40 ,  G03F7/091

    摘要： The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.

    Organic bottom antireflective coating for high performance mask making using optical imaging
    7.
    发明授权
    Organic bottom antireflective coating for high performance mask making using optical imaging 有权

    公开(公告)号：US06605394B2

    公开(公告)日：2003-08-12

    申请号：US09848859

    申请日：2001-05-03

    申请人： Melvin W. Montgomery ,  Jeffrey A Albelo

    发明人： Melvin W. Montgomery ,  Jeffrey A Albelo

    IPC分类号： G03F900

    CPC分类号： G03F1/46 ,  G03F1/76 ,  G03F7/091

    摘要： The disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including applying an organic antireflection coating over a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; and exposing a surface of the DUV photoresist to the direct write continuous wave laser. The direct write continuous wave laser operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.

    Apparatus used in reshaping a surface of a photoresist
    8.
    发明授权
    Apparatus used in reshaping a surface of a photoresist 有权
    用于重塑光刻胶表面的装置

    公开(公告)号：US07244334B2

    公开(公告)日：2007-07-17

    申请号：US11183045

    申请日：2005-07-15

    申请人： Alex Buxbaum ,  Melvin W. Montgomery

    发明人： Alex Buxbaum ,  Melvin W. Montgomery

    IPC分类号： H05H1/00 ,  G03F1/00

    CPC分类号： G03F7/40 ,  G03F7/091

    摘要： The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.

    摘要翻译： 本发明涉及一种改进对图案化光致抗蚀剂的尺寸的控制的方法，其使得能够更好地控制使用图案化光致抗蚀剂制造的光掩模或掩模版的临界尺寸。 此外，该方法可以用于使得能够改进对使用图案化光致抗蚀剂制造的半导体器件的尺寸的控制。 特别地，用蚀刻剂等离子体处理图案化的光致抗蚀剂以重塑形成图案的光致抗蚀剂的表面，其中整形包括去除图案化抗蚀剂的上表面处的“t” - 顶部，去除存在于图案化表面上的驻波 以及可能存在于图案化光致抗蚀剂的基底处的脚的移除，其中光致抗蚀剂接触诸如ARC层的下层。 该方法对于化学放大的DUV光致抗蚀剂特别有用，其中在显影的图案化光致抗蚀剂中存在“t”顶，驻波和脚形成。

    Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing
    9.
    发明授权
    Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing 失效

    公开(公告)号：US07067227B2

    公开(公告)日：2006-06-27

    申请号：US10155523

    申请日：2002-05-23

    申请人： Melvin W. Montgomery ,  Christopher Hamaker

    发明人： Melvin W. Montgomery ,  Christopher Hamaker

    IPC分类号： G03F7/00

    CPC分类号： G03F7/0392

    摘要： The disclosure pertains to a photoresist composition and a method of using the photoresist in the fabrication of reticles or features on a semiconductor substrate. The photoresist composition and the method are designed to reduce the variation in critical dimension of features across a surface of a substrate, where the variation in critical dimension is a result of localized resist loading. The photoresist composition is useful when the imaging system is G-line, H-line, or I-line, and the photoresist composition includes a sensitizer which works in combination with a DUV photoresist including a PAC, to sensitize the photoresist to the G-line, H-line and I-line imaging.

    Method of increasing the shelf life of a blank photomask substrate
    10.
    发明授权
    Method of increasing the shelf life of a blank photomask substrate 失效
    提高空白光掩模基板的保质期的方法

    公开(公告)号：US06998206B2

    公开(公告)日：2006-02-14

    申请号：US10758827

    申请日：2004-01-15

    申请人： Scott Fuller ,  Melvin W. Montgomery ,  Jeffrey A. Albelo ,  Alex Buxbaum

    发明人： Scott Fuller ,  Melvin W. Montgomery ,  Jeffrey A. Albelo ,  Alex Buxbaum

    IPC分类号： G03F9/00 ,  G03F7/00

    CPC分类号： G03F7/168 ,  G03F1/46 ,  G03F1/50 ,  G03F1/76 ,  G03F7/091 ,  Y10S430/146 ,  Y10S430/151

    摘要： One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.

    摘要翻译： 本公开的一个主要实施例涉及一种使用直写式连续波激光器光学制造光掩模的方法，包括一系列步骤，包括：在包含含铬层的光掩模的表面上施加有机抗反射涂层; 在有机抗反射涂层上施加化学放大的DUV光致抗蚀剂; 在特定温度范围内涂抹DUV光刻胶; 将DUV光致抗蚀剂的表面暴露于直写式连续波激光器; 并且在特定温度范围内曝光烘烤成像的DUV光致抗蚀剂。 直写式连续波激光器优选在244nm或257nm的波长下工作。 在替代实施例中，有机抗反射涂层可以涂覆在覆盖含铬层的无机抗反射涂层上。