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    Micro chip antenna
    1.
    发明申请
    Micro chip antenna 失效
    微芯片天线

    公开(公告)号：US20060158377A1

    公开(公告)日：2006-07-20

    申请号：US11036015

    申请日：2005-01-18

    申请人： Chuan-Ling Hu ,  Meng-Chiu Pan ,  Shun-Tian Lin ,  Chang-Fa Yang ,  Kuo-Chung Cheng ,  Sea-Fue Wang ,  Lisen Chang ,  Chang-Lun Liao ,  Chia-Hung Chen

    发明人： Chuan-Ling Hu ,  Meng-Chiu Pan ,  Shun-Tian Lin ,  Chang-Fa Yang ,  Kuo-Chung Cheng ,  Sea-Fue Wang ,  Lisen Chang ,  Chang-Lun Liao ,  Chia-Hung Chen

    IPC分类号： H01Q1/38

    CPC分类号： H01Q1/38 ,  H01Q1/22 ,  H01Q1/2283

    摘要： A method for manufacturing microchip antenna comprises a dielectric substrate having antennal radiated conductor paths composing of a single-feeding end or multiple-feeding ends and multiple-curved paths; a dielectric substrate having the antennal radiated conductor paths being packaged by the material capable of adjusting easily dielectric constant; and an antennal object including antennal radiated conductor paths, feeding ends, welding spots and packaging materials. The main body of the antenna has multi-folded paths, feeding ends, welding spots, and a packaging body. The radiation wires of the antenna is built on a single or a multiple input ends on a dielectric substrate and is multi-folded wires and it is packaged by another dielectric material. The radiation wires of the antenna can be designed and manufactured in three dimension so as to reduce the area occupied by the antenna and reduce the coupling interference between the elements.

    摘要翻译： 一种微芯片天线的制造方法，其特征在于，包括：具有由单个进给端或多个进给端构成的天线辐射导体路径和多个弯曲路径的电介质基板; 具有天线辐射导体路径的电介质基板被能够容易调节介电常数的材料封装; 以及包括天线辐射导体路径，馈电端，焊点和包装材料的触角物体。 天线的主体具有多折叠路径，馈电端，焊点和封装体。 天线的辐射线建立在电介质基板上的单个或多个输入端上，并且是多折线，并且由另一介质材料封装。 天线的辐射线可以三维设计和制造，以减少天线所占的面积，并减少元件之间的耦合干扰。

    Dielectric ceramic composition
    3.
    发明授权
    Dielectric ceramic composition 有权
    介电陶瓷组合物

    公开(公告)号：US08178458B2

    公开(公告)日：2012-05-15

    申请号：US12628994

    申请日：2009-12-01

    申请人： Sea-Fue Wang ,  Yuh-Ruey Wang ,  Bo-Sen Yang

    发明人： Sea-Fue Wang ,  Yuh-Ruey Wang ,  Bo-Sen Yang

    IPC分类号： C04B35/468

    CPC分类号： C04B35/4682 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3262 ,  C04B2235/3277 ,  C04B2235/3279 ,  C04B2235/3436 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/77 ,  H01G4/1227

    摘要： A dielectric ceramic composition is disclosed. The dielectric ceramic composition of the present invention comprises BaTiO3 as the main component and one or more subcomponents. The one or more subcomponents include Sc2O3, MgCO3, BaSiO3, MnCO3, La2O3, CO3O4 and NiO. An end product of the present invention may be formed after BaTiO3 and the subcomponents undergo the following steps: (1) Wet mixing using a ball mill (2) Sintering in a reducing atmosphere (3) Annealing. The dielectric ceramic composition of the present invention can satisfy the X8R characteristic of the EIA standard and is compact or dense enough.

    摘要翻译： 公开了一种介电陶瓷组合物。 本发明的电介质陶瓷组合物包含BaTiO 3作为主要成分和一个或多个亚成分。 一个或多个子部件包括Sc 2 O 3，MgCO 3，BaSiO 3，MnCO 3，La 2 O 3，CO 3 O 4和NiO。 本发明的最终产品可以在BaTiO 3之后形成，其次要部分经过以下步骤：（1）使用球磨机湿式混合（2）在还原气氛中烧结（3）退火。 本发明的电介质陶瓷组合物可以满足EIA标准的X8R特性，并且足够紧凑或致密。

    Method for production of diamond-like carbon film having semiconducting property
    5.
    发明授权
    Method for production of diamond-like carbon film having semiconducting property 有权
    具有半导体性质的类金刚石碳膜的制造方法

    公开(公告)号：US07727798B1

    公开(公告)日：2010-06-01

    申请号：US12360333

    申请日：2009-01-27

    申请人： Sea-Fue Wang ,  Jui-Chen Pu ,  Chia-Lun Lin ,  Fu-Ting Hsu ,  Kai-Hung Hsu ,  Yu-Chuan Wu ,  Shea-Jue Wang ,  Chien-Min Sung ,  Shao-Chung Hu ,  Ming-Chi Kan

    发明人： Sea-Fue Wang ,  Jui-Chen Pu ,  Chia-Lun Lin ,  Fu-Ting Hsu ,  Kai-Hung Hsu ,  Yu-Chuan Wu ,  Shea-Jue Wang ,  Chien-Min Sung ,  Shao-Chung Hu ,  Ming-Chi Kan

    IPC分类号： H01L21/00

    CPC分类号： H01L21/0405 ,  C23C14/0605 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500° C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3×1018 cm-3, and its resistivity is about 0.6 Ω-cm; consequently. The boron-doped semiconducting diamond-like carbon film having excellent semiconductor property and high temperature stability according to the invention is best applicable in solar cell or electronic communication and electrode elements and equipments.

    摘要翻译： 具有半导体性质的类金刚石碳膜的制造方法包括通过射频磁控溅射法在硅衬底上制备掺硼的类金刚石碳（B-DLC）薄膜，其中通过将硼 使用片剂作为石墨靶中的掺杂剂源。 在形成含硼金刚石碳膜之后，将薄膜在500℃的温度下退火并在该温度下保持10分钟，并确定其载流子浓度和电阻率。 因此证明所述硼掺杂的类金刚石碳膜的极性是p型半导体特性。 载体浓度可高达1.3×1018 cm-3，其电阻率约为0.6＆OHgr; -cm; 所以。 根据本发明的具有优异的半导体性能和高温稳定性的硼掺杂的半导体类金刚石碳膜最好适用于太阳能电池或电子通信以及电极元件和设备。

    Metallization compositions for BI and PB-containing ceramic dielectrics
    6.
    发明授权
    Metallization compositions for BI and PB-containing ceramic dielectrics 失效
    用于BI和含PB陶瓷电介质的金属化组合物

    公开(公告)号：US5391223A

    公开(公告)日：1995-02-21

    申请号：US110039

    申请日：1993-08-20

    申请人： Joseph P. Dougherty ,  Sea-Fue Wang ,  Wayne Huebner

    发明人： Joseph P. Dougherty ,  Sea-Fue Wang ,  Wayne Huebner

    IPC分类号： C04B41/51 ,  C04B41/88 ,  H01G4/008 ,  C23C20/04

    CPC分类号： H01G4/008 ,  C04B41/5122 ,  C04B41/88

    摘要： It has been newly determined that in a reaction of an Ag/Pd metallization with Pb from a lead-based ceramics, a maximum solubility of Pb is observed of approximately 14% (atomic percent). By inclusion of an effective amount of Pb in the Ag/Pd metallization, leaching of Pb from a Pb-based ceramic is either reduced or eliminated. Thus, upon firing, the metallization exhibits an equilibration which prevents Pb from being drawn out of the underlying ceramic. Similarly, Ag/Pd metallization shows a maximum solubility of 16 atomic percent for Bi in Bi-based ceramics. Inclusion of an effective amount of Bi in the metallization prevents a Bi leaching from an underlying ceramic.

    摘要翻译： 新确定的是，在铅/铅金属化与铅基陶瓷的Pb反应中，Pb的最大溶解度约为14％（原子百分比）。 通过在Ag / Pd金属化中包含有效量的Pb，可以减少或消除Pb从Pb基陶瓷的浸出。 因此，在烧制时，金属化表现出平衡，防止Pb从下面的陶瓷中拉出。 类似地，Ag / Pd金属化显示Bi在Bi基陶瓷中的最大溶解度为16原子百分比。 在金属化中包含有效量的Bi防止来自底层陶瓷的Bi浸出。

    Amperometric Oxygen Sensor
    7.
    发明申请
    Amperometric Oxygen Sensor 审中-公开
    电流传感器

    公开(公告)号：US20120073970A1

    公开(公告)日：2012-03-29

    申请号：US13160674

    申请日：2011-06-15

    申请人： Sea-Fue Wang ,  Anthony Lee ,  Wen-Shuo Hsieh

    发明人： Sea-Fue Wang ,  Anthony Lee ,  Wen-Shuo Hsieh

    IPC分类号： G01N27/333

    CPC分类号： G01N27/333

    摘要： An amperometric oxygen sensor for sensing the partial pressure of oxygen is disclosed. The amperometric oxygen sensor having a multilayered body which comprises a plurality of oxygen ion conductor layers interposed between a plurality of oxygen-porous electrode layers. Oxygen from a sample gas enters porous cathode layer of the sensor, through the ion conductor diffuses to anode because of a potential difference, and then an amperometric current is measured, which is proportional to the partial pressure of the oxygen. The amperometric oxygen sensor further comprises a heating member embedded within the sensor body and a heating controller electrically connects with the heating member to heat and maintain the sensor at working temperature, about 500˜800° C. An electrical insulator layer, but not thermal insulator, is blocked between the heating member and the oxygen-porous electrode strips so as to prevent the amperometric current from electromagnetic field interference.

    摘要翻译： 公开了一种用于感测氧分压的电流式氧传感器。 具有多层体的电流式氧传感器包括插入在多个氧气孔电极层之间的多个氧离子导体层。 来自样品气体的氧气进入传感器的多孔阴极层，由于电位差而通过离子导体扩散到阳极，然后测量与氧的分压成比例的电流电流。 电流式氧传感器还包括嵌入在传感器体内的加热构件，加热控制器与加热构件电连接，以将传感器加热并保持在约500〜800℃的工作温度。电绝缘体层，但不是绝热体 在加热构件和氧气孔电极带之间被阻塞，以防止电流电流受到电磁干扰。

    Method for processing ceramic powder suspension
    8.
    发明授权
    Method for processing ceramic powder suspension 有权
    加工陶瓷粉末悬浮液的方法

    公开(公告)号：US07517915B2

    公开(公告)日：2009-04-14

    申请号：US11543513

    申请日：2006-10-05

    申请人： Kung-Chung Hsu ,  Lung-Pin Chen ,  Dao-Shinn Hwung ,  Kuo-Liang Ying ,  Wen-Cheng Wei ,  Sea-Fue Wang

    发明人： Kung-Chung Hsu ,  Lung-Pin Chen ,  Dao-Shinn Hwung ,  Kuo-Liang Ying ,  Wen-Cheng Wei ,  Sea-Fue Wang

    IPC分类号： B01F3/12 ,  B01F17/18

    CPC分类号： B01F17/005 ,  C01G23/006 ,  C01P2004/61 ,  C04B35/468 ,  C04B35/6264 ,  C04B35/63 ,  C04B35/632 ,  C04B2235/5445 ,  C09C1/36 ,  C09C1/3669 ,  Y10S516/928

    摘要： A method for preparing a ceramic powder suspension is disclosed. A dispersant having a following structural formula is provided: wherein D is H or COOR1; R1 is a hydrogen atom, or an alkyl group, a cyclic aliphatic group, an aryl group, having 1 to 10 carbon atoms, or a cationic salt group; R2 is an alkyl group having 1 to 10 carbon atoms, a cyclic aliphatic having 1 to 10 carbon atoms or an aryl group having 1 to 10 carbon atoms; R3 is a hydrogen atom or a methyl group; Z is an oxygen atom or an NH group; A is —COO —SO3 or an acid form; a is an integer between 1 to 5000; and p and q are integers between 1 to 10. The dispersant is dissolved in a solvent. Ceramic powder is further added into the solvent with the dispersant.

    摘要翻译： 公开了一种制备陶瓷粉末悬浮液的方法。 提供具有以下结构式的分散剂：其中D是H或COOR1; R1是氢原子或烷基，环脂族基，具有1-10个碳原子的芳基或阳离子盐基; R2是碳原子数1〜10的烷基，碳原子数1〜10的环状脂肪或碳原子数1〜10的芳基。 R3是氢原子或甲基; Z是氧原子或NH基团; A是-COO-SO 3或酸形式; a为1〜5000之间的整数; p和q为1〜10的整数。将分散剂溶解在溶剂中。 用分散剂进一步将陶瓷粉末加入到溶剂中。

    Low-temperature sintered barium titanate microwave dielectric ceramic material
    9.
    发明申请
    Low-temperature sintered barium titanate microwave dielectric ceramic material 失效
    低温烧结钛酸钡微波介质陶瓷材料

    公开(公告)号：US20060194691A1

    公开(公告)日：2006-08-31

    申请号：US11066303

    申请日：2005-02-28

    申请人： Sea-Fue Wang ,  Yuh-Ruey Wang ,  Mei-Hui Hsiao

    发明人： Sea-Fue Wang ,  Yuh-Ruey Wang ,  Mei-Hui Hsiao

    IPC分类号： C04B35/468

    CPC分类号： C04B35/468 ,  C01G23/006 ,  C01P2002/72 ,  C01P2006/40 ,  C03C3/066 ,  C03C12/00 ,  C03C14/004 ,  C03C2214/04 ,  C04B35/6261 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3293 ,  C04B2235/3409 ,  C04B2235/365 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/80 ,  Y10T428/24926

    摘要： The present invention relates to a low-temperature sintered barium titanate microwave dielectric ceramic material. The host matrix thereof can be represented by BaxTiyMZOX+2y+k, where x is 1˜6, y is 1˜17, z is 0˜1, k is 0˜3, M is an element substituting the Ba or Ti ion, for example selected from an alkali metal, an alkaline-earth metal, a transition group or a rare earth group, and preferably Ba2Ti9O20 or the host matrix containing Zr, Sn, Zn, etc. According to the present invention, a low melting glass is added and a subsequent milling operation is performed to reduce the sintering temperature of the microwave dielectric ceramic material to less than 1,000° C. The low melting glass can be for example the Ba-B-Si-Li glass, Ba-B-Zn-Si-Li glass, Ba-B-Si-Li-Cu glass or Cu-B-Zn-Si-Li glass.

    摘要翻译： 本发明涉及一种低温烧结钛酸钡微波介电陶瓷材料。 其主体矩阵可以由下式表示：其中Z 1，X 2，X 2，Y 2，...， x为1〜6，y为1〜17，z为0〜1，k为0〜3，M为取代Ba或Ti离子的元素，例如选自碱金属，碱土金属， 过渡组或稀土组，优选为Ba 2 N 2 O 20 O 20或含有Zr，Sn，Zn等的主体基体。 根据本发明，加入低熔点玻璃并进行随后的研磨操作，以将微波介电陶瓷材料的烧结温度降低至小于1000℃。低熔点玻璃可以是例如Ba-B- Si-Li玻璃，Ba-B-Zn-Si-Li玻璃，Ba-B-Si-Li-Cu玻璃或Cu-B-Zn-Si-Li玻璃。