Magneto-optical recording and reproducing system
    1.
    发明授权
    Magneto-optical recording and reproducing system 失效
    磁光记录和再现系统

    公开(公告)号:US4477852A

    公开(公告)日:1984-10-16

    申请号:US358040

    申请日:1982-03-15

    摘要: A magneto-optical recording and reproducing apparatus for recording information on a recording medium made of a magneto-optical recording material. The apparatus is provided with at least two lasers for carrying out simultaneously a combination of two functions of the apparatus such as recording-reproducing or reproducing-erasing or erasing-recording functions. The recording and erasing is effected optically by independent light beams. Provision is made for recording and erasing the information by light beam and by use of an application of magnetic fields of different coercive values. The lasers are modulated or not independently and an optical system is provided through which the write-in and readout takes place and focusing is in response to the reflected light from the record on the recording medium.

    摘要翻译: 一种用于在由磁光记录材料制成的记录介质上记录信息的磁光记录和再现装置。 该装置设置有至少两个激光器,用于同时执行装置的两个功能的组合,例如记录再现或再现擦除或擦除记录功能。 记录和擦除由独立光束光学实现。 提供了通过光束记录和擦除信息,并通过使用不同矫顽力的磁场的应用。 激光器被调制或不是独立的,并且提供了一种光学系统,通过该系统进行写入和读出,并且聚焦是响应于来自记录介质上的记录的反射光。

    Multi-layer magneto-optical recording medium
    3.
    发明授权
    Multi-layer magneto-optical recording medium 失效
    多层磁光记录介质

    公开(公告)号:US4417290A

    公开(公告)日:1983-11-22

    申请号:US294310

    申请日:1981-08-19

    CPC分类号: G11B11/10582 G11B7/24

    摘要: A multi-layer magneto-optical recording medium is constructed by placing a transparent protective film upon a magneto-optical recording medium wherein the easy axis of magnetization is provided perpendicular to the film surface so as to make the direction of magnetization perpendicular thereto to take a binary code depending on whether the vertical direction thereof is upward or downward, and further by placing a metal film, of which melting point is lower than either said magneto-optical recording medium and said transparent protective film, upon said transparent protective film.The metal film is evaporated by a laser beam irradiated thereon in a manner to leave a portion thereof not evaporated to become a tracking guide, whereby reproducing a magneto-optical record free of disturbance on linear polarization.The metal film can be perforated to form pits by irradiation of a laser beam. Presence or absence of such pits can be used for storing data and, therefore, is applicable for a read-only memory of optical method or an optical video disc.

    摘要翻译: 通过将透明保护膜放置在磁光记录介质上来构造多层磁光记录介质,其中易磁化轴垂直于膜表面设置,以使其垂直于其的磁化方向取 二进制码取决于其垂直方向是向上还是向下,还通过将熔点低于所述磁光记录介质和所述透明保护膜的金属膜放置在所述透明保护膜上。 金属膜被照射在其上的激光束以使其部分未蒸发而成为跟踪引导件的方式蒸发,从而再现无线性偏振干扰的磁光记录。 金属膜可以被穿孔以通过激光束的照射形成凹坑。 这种凹坑的存在或不存在可用于存储数据,因此可应用于光学方法或光学视频盘的只读存储器。

    Magneto-optic recording medium
    5.
    发明授权
    Magneto-optic recording medium 失效
    磁光记录介质

    公开(公告)号:US4412264A

    公开(公告)日:1983-10-25

    申请号:US197805

    申请日:1980-10-17

    摘要: Disclosed is a magneto-optic recording medium to which magnetic Kerr effect is applied and characterized by the tracking guide on an even surface free from disorder of linear polarization. Since the tracking guide may be any type if it has a different reflection characteristic from that of the memory area viewing from magneto-optic standpoint, the tracking guide can be produced by a thermal treatment for changing the magnetic property of a part of a thin film with its magnetization easy axis in the direction perpendicular to the film surface. As no difference exists between the memory area and the guide area other than their magnetic properties, they are on the same plane and have no unevenness between their surfaces. Where, the guide area is assumed to have such magnetic property as the magnetization easy axis is parallel to the film surface, or it is perpendicular to the film surface but has no rectangular hysterisis. Such change of magnetic property can be obtained easily by an irradiation of laser beam to an amorphous alloy thin film with perpendicular magnetization easy axis.

    摘要翻译: 公开了一种磁光记录介质,其上施加了磁性克尔效应,并且在没有线性极化无序的均匀表面上由跟踪引导器表征。 由于如果跟踪引导件具有与从磁光立体观察的存储区域的反射特性不同的反射特性,则跟踪引导件可以是任何类型的,所以跟踪引导件可以通过用于改变薄膜部分的磁性能的热处理 其磁化容易轴在垂直于膜表面的方向上。 记忆区域和引导区域之间的磁性不同,它们在同一平面上并且在其表面之间没有不均匀性。 其中,引导区域被认为具有磁化容易轴平行于膜表面或者它垂直于膜表面但没有矩形滞后的磁性。 通过将激光束照射到具有垂直磁化容易轴的非晶合金薄膜,可以容易地获得这种磁特性的变化。

    System for transmitting a coded voice signal
    6.
    发明授权
    System for transmitting a coded voice signal 失效
    用于发送编码语音信号的系统

    公开(公告)号:US4012595A

    公开(公告)日:1977-03-15

    申请号:US478768

    申请日:1974-06-12

    申请人: Chuichi Ota

    发明人: Chuichi Ota

    摘要: A system for transmitting a coded voice signal representative of an original analogue voice signal, for improved performance in time assignment multiplex systems. A voice signal detector detects when the magnitude of the coded voice signal exceeds a certain predetermined value which corresponds to the presence of an original voice signal. A waveform analyzer estimates high frequency components of the original voice signal and the detected coded voice signal is transmitted at intervals determined by the measured values of the high frequency components. The transmitted coded voice signal is comprised of digital code units, and the number of bits in each code unit are reduced at low transmission speed by distributing the bits of the code units between more than one transmission interval.

    摘要翻译: 一种用于发送表示原始模拟语音信号的编码语音信号的系统,用于在时间分配多路复用系统中改善性能。 语音信号检测器检测编码的语音信号的大小何时超过对应于原始语音信号的存在的某个预定值。 波形分析器估计原始语音信号的高频分量,并且以由高频分量的测量值确定的间隔发送检测到的编码语音信号。 发送的编码语音信号由数字代码单元组成,并且通过在多个传输间隔之间分配代码单元的比特,以低传输速度减少每个代码单元中的位数。

    Semiconductor laser
    7.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4456998A

    公开(公告)日:1984-06-26

    申请号:US266610

    申请日:1981-05-22

    IPC分类号: H01S5/223 H01S3/19

    CPC分类号: H01S5/2231

    摘要: A semiconductor laser, which comprises a substrate of InP, an active layer, and two clad layers holding therebetween the active layer, and which is constructed so that the refractive index of the active layer may be larger than the refractive indexes of the two clad layers. In one of the two clad layers, the refractive index of a region adjacent to a radiation region in the active layer is larger than the refractive index of a region adjacent to a non-radiation region in the active layer. The refractive index of the other clad layer is equal to the refractive index of that region of said on clad layer adjoining the radiation region or the non-radiation region. The thickness and width of the radiation region of the active layer are selected so that the semiconductor laser may oscillate in the fundamental transverse mode. A buffer layer may be further provided between the active layer and one of the two clad layers.

    摘要翻译: 一种半导体激光器,其包括InP的衬底,有源层和保持在其间的有源层的两个覆盖层,并且被构造成使得有源层的折射率可以大于两个覆盖层的折射率 。 在两个包覆层中的一个中,与有源层中的辐射区相邻的区域的折射率大于与有源层中的非辐射区域相邻的区域的折射率。 另一个包覆层的折射率等于与辐射区域或非辐射区域相邻的所述上包层的区域的折射率。 选择有源层的辐射区域的厚度和宽度,使得半导体激光器可以在基本横向模式下振荡。 可以在活性层和两个包覆层中的一个之间进一步设置缓冲层。

    Wide-band hybrid network
    8.
    发明授权
    Wide-band hybrid network 失效
    宽带混合网络

    公开(公告)号:US3973088A

    公开(公告)日:1976-08-03

    申请号:US527378

    申请日:1974-11-26

    IPC分类号: H04B3/03 H03H11/36 H04B1/58

    CPC分类号: H04B1/583

    摘要: A wide-band hybrid network, in which a signal received from a four-wire section is applied to a first balanced amplifier and a second balanced amplifier. The output of the first balanced amplifier is applied to one opposed terminals of a main bridge circuit which has an arm including terminals connected to a wide-band two-wire transmission line. The output of the second balanced amplifier is applied to one opposed terminals of an auxiliary bridge circuit which has an arm substantially equivalent to the impedance of the wide-band two-wire transmission line. A differential amplifier is employed for receiving signals of respective other opposed terminals of the main bridge circuit and the auxiliary bridge circuit. The output of the differential amplifier is applied to another four-wire section.

    摘要翻译: 宽带混合网络,其中从四线部分接收的信号被施加到第一平衡放大器和第二平衡放大器。 第一平衡放大器的输出被施加到主桥电路的一个相对的端子,该主桥电路具有包括连接到宽带两线传输线的端子的臂。 第二平衡放大器的输出被施加到辅助电桥电路的一个相对的端子,辅助电路电路的臂基本上等于宽带双线传输线的阻抗。 采用差分放大器来接收主桥电路和辅桥电路的各个其它相对端子的信号。 差分放大器的输出应用于另一个四线制部分。

    Semiconductor laser
    9.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4410994A

    公开(公告)日:1983-10-18

    申请号:US302705

    申请日:1981-09-16

    IPC分类号: H01S5/00 H01S5/323 H01S3/19

    CPC分类号: H01S5/323

    摘要: A semiconductor laser having a multi-layer film which is inclusive of an active layer and formed on an InP substrate, in which at least one layer adjacent to the active layer is formed of a material which is a composition having a larger band gap than InP and whose component ratio is so selected as to match with the lattice constant of InP, thereby to ensure that minority carriers injected into the active layer efficiently contribute to laser operation. The material has a composition including at least three elements in addition to InP.

    摘要翻译: 一种具有多层膜的半导体激光器,其包括活性层并形成在InP衬底上,其中与有源层相邻的至少一层是由具有比InP大的带隙的组合物形成的材料 并且其分量比被选择为与InP的晶格常数匹配,从而确保注入有源层的少数载流子有效地促成激光操作。 除了InP之外,该材料还具有包含至少三种元素的组合物。

    Semiconductor laser with buffer layer
    10.
    发明授权
    Semiconductor laser with buffer layer 失效
    具有缓冲层的半导体激光器

    公开(公告)号:US4340966A

    公开(公告)日:1982-07-20

    申请号:US122171

    申请日:1980-02-19

    CPC分类号: H01S5/3235 H01S5/32391

    摘要: A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.

    摘要翻译: 在InP衬底上形成的具有包含多个In1-xGax'AsyP1-y(0.42y≤x≤0.5y,0≤y≤1)的异质结构的半导体激光器,它们是 与InP晶格匹配,其中包含在层中并且具有大于0.6eV但小于0.9eV的禁带宽的发光层在InP衬底上夹在两个InP层之间,其中存在 设置在发光层和在其上生长的至少一个具有比发光层的禁带宽度大的禁带宽度的缓冲层,但小于InP的禁带宽度的InP层。 缓冲层在室温下的禁带宽度可能大于0.8eV但小于1.0eV。