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    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    显示基板及其制造方法

    公开(公告)号：US20100019996A1

    公开(公告)日：2010-01-28

    申请号：US12486542

    申请日：2009-06-17

    申请人： Chun-Gi YOU ,  Kap-Soo YOON ,  Gug-Rae JO ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Jae-Ho CHOI

    发明人： Chun-Gi YOU ,  Kap-Soo YOON ,  Gug-Rae JO ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Jae-Ho CHOI

    IPC分类号： G09G3/30 ,  H01L21/00

    CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/7869

    摘要： A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.

    摘要翻译： 显示基板包括电连接到栅极线和数据线的开关晶体管，所述数据线在基本上垂直于在第二方向延伸的栅极线的第一方向上延伸，所述开关晶体管包括包含非晶硅的开关有源图案， 电连接到驱动电压线的驱动晶体管和所述开关晶体管，所述驱动电压线在所述第一方向上延伸，所述驱动晶体管包括包含金属氧化物的驱动有源图案; 以及电连接到驱动晶体管的发光元件。

    DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME 有权
    显示基板，其制造方法

    公开(公告)号：US20110147740A1

    公开(公告)日：2011-06-23

    申请号：US12977853

    申请日：2010-12-23

    申请人： Ki-Hun JEONG ,  Do-Hyun KIM ,  Dong-Hoon LEE ,  Kap-Soo YOON ,  Jae-Ho CHOI ,  Sung-Hoon YANG ,  Pil-Sang YUN ,  Seung-Mi SEO

    发明人： Ki-Hun JEONG ,  Do-Hyun KIM ,  Dong-Hoon LEE ,  Kap-Soo YOON ,  Jae-Ho CHOI ,  Sung-Hoon YANG ,  Pil-Sang YUN ,  Seung-Mi SEO

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78633

    摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

    摘要翻译： 本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化 的氧化物半导体。 TFT包括氧化物半导体层; 保护层，设置在所述氧化物半导体层上并与所述氧化物半导体层的沟道区域重叠; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 与所述氧化物半导体层的第二面接触且与所述源电极相对的漏电极，所述沟道区域设置在所述漏电极和所述源电极之间; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

    PHOTONIC SENSOR, METHOD OF MANUFACTURING SAME, COLOR FILTER SUBSTRATE HAVING SAME, AND DISPLAY DEVICE HAVING THE COLOR FILTER SUBSTRATE
    4.
    发明申请
    PHOTONIC SENSOR, METHOD OF MANUFACTURING SAME, COLOR FILTER SUBSTRATE HAVING SAME, AND DISPLAY DEVICE HAVING THE COLOR FILTER SUBSTRATE 有权
    光电传感器，其制造方法，具有它们的彩色滤色器基板以及具有彩色滤光片基板的显示装置

    公开(公告)号：US20110090437A1

    公开(公告)日：2011-04-21

    申请号：US12898250

    申请日：2010-10-05

    申请人： Kap-Soo YOON ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Kyung-Sook JEON ,  Seung-Mi SEO

    发明人： Kap-Soo YOON ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Kyung-Sook JEON ,  Seung-Mi SEO

    IPC分类号： H01L31/0232 ,  H01L31/0352 ,  G02B5/23 ,  B82Y15/00

    CPC分类号： H01L27/1446 ,  B82Y15/00 ,  B82Y20/00 ,  G02B5/201 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers.

    摘要翻译： 光子传感器包括第一电极层，第二电极层，第三电极层，第一光子吸收层，第二光子吸收层，第三光子吸收层和电荷阻挡层。 第一光子吸收层包括第一纳米颗粒的分散体，并且被配置为将第一有色光转换成相应的电荷。 第二光子吸收层包括第二纳米颗粒的分散体，并且被配置为根据光强度将第二有色光转换成相应的电荷。 第三光子吸收层包括第三纳米颗粒的分散体，并且被配置为根据光强度将第三有色光转换成相应的电荷。 电荷阻挡层形成在第一和第二光子吸收层之间以阻止第一和第二光子吸收层之间的电荷流动。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME 审中-公开
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20090272980A1

    公开(公告)日：2009-11-05

    申请号：US12272624

    申请日：2008-11-17

    申请人： Seung-Hwan SHIM ,  Ki-Hun JEONG ,  Joo-Han KIM ,  Sung-Hoon YANG ,  Hong-kee CHIN

    发明人： Seung-Hwan SHIM ,  Ki-Hun JEONG ,  Joo-Han KIM ,  Sung-Hoon YANG ,  Hong-kee CHIN

    IPC分类号： H01L31/036 ,  H01L21/84

    CPC分类号： H01L27/1288 ,  H01L27/124

    摘要： A semiconductor including a channel, a data line including a source electrode, a drain electrode, and a pixel area definition member is formed on a gate insulating layer, and a passivation layer is deposited on the data line, the pixel area definition member, and the channel of the semiconductor. A first photosensitive film pattern including a first portion disposed at a position corresponding to the drain electrode and a second portion that is thicker than the first portion, and exposing the passivation layer at a position corresponding to the pixel area definition member, is formed on the passivation layer, the passivation layer that is exposed by using the first photosensitive film pattern as an etch mask is etched, and a second photosensitive film pattern is formed by etching the whole surface of the first photosensitive film pattern to remove the first portion. The pixel area definition member exposed by the passivation layer is etched, and the passivation layer exposed by the removal of the first portion and the semiconductor exposed by the removal of the pixel area definition member are etched. A conductor layer for a pixel electrode is formed, and the second photosensitive film pattern is removed to form the pixel electrode.

    摘要翻译： 包括沟道的半导体，包括源电极，漏电极和像素区域定义部件的数据线形成在栅极绝缘层上，钝化层沉积在数据线，像素区域定义部件和 半导体的通道。 第一感光膜图案包括设置在与漏电极相对应的位置处的第一部分和比第一部分更厚的第二部分，并且在与像素区域定义部件对应的位置处曝光钝化层，形成在 钝化层，蚀刻通过使用第一感光膜图案而曝光的钝化层作为蚀刻掩模，并且通过蚀刻第一感光膜图案的整个表面以除去第一部分来形成第二感光膜图案。 蚀刻由钝化层露出的像素区域定义构件，蚀刻通过去除第一部分而露出的钝化层和通过去除像素区域定义构件而暴露的半导体。 形成用于像素电极的导体层，并且去除第二感光膜图案以形成像素电极。

    THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20100001277A1

    公开(公告)日：2010-01-07

    申请号：US12498526

    申请日：2009-07-07

    申请人： Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

    发明人： Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

    IPC分类号： H01L27/12 ,  H01L21/77

    CPC分类号： H01L27/1214 ,  H01L27/1288 ,  H01L29/4908

    摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

    摘要翻译： 制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

    THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20120208330A1

    公开(公告)日：2012-08-16

    申请号：US13450643

    申请日：2012-04-19

    申请人： Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

    发明人： Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

    IPC分类号： H01L21/336

    CPC分类号： H01L27/1214 ,  H01L27/1288 ,  H01L29/4908

    摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

    摘要翻译： 制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME
    10.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US20100001275A1

    公开(公告)日：2010-01-07

    申请号：US12498534

    申请日：2009-07-07

    申请人： Joo-Han KIM ,  Ki-Hun JEONG ,  Seung-Hwan SHIM

    发明人： Joo-Han KIM ,  Ki-Hun JEONG ,  Seung-Hwan SHIM

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  Y10S438/951

    摘要： A thin-film transistor (“TFT”) substrate and a method of fabricating the same include: an insulating substrate; gate wiring which is disposed on the insulating substrate and includes a gate line and a gate electrode; a semiconductor pattern which is disposed on the gate electrode; data wiring which is disposed on the semiconductor pattern and includes a data line, a source electrode, and a drain electrode; a passivation layer which includes a first sub-passivation layer and a second sub-passivation layer deposited on the data wiring; and a pixel electrode which is electrically connected to the drain electrode through a contact hole disposed in the passivation layer, wherein the second sub-passivation layer has a lower density than the first sub-passivation layer.

    摘要翻译： 薄膜晶体管（“TFT”）基板及其制造方法包括：绝缘基板; 栅极布线，其布置在所述绝缘基板上并且包括栅极线和栅电极; 设置在栅电极上的半导体图案; 数据布线，其布置在半导体图案上并且包括数据线，源电极和漏电极; 钝化层，其包括沉积在数据布线上的第一子钝化层和第二子钝化层; 以及通过设置在所述钝化层中的接触孔电连接到所述漏电极的像素电极，其中所述第二子钝化层具有比所述第一子钝化层更低的密度。