摘要:
A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers.
摘要:
A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.
摘要:
An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.
摘要:
A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.
摘要:
The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.
摘要:
A photosensor includes a substrate, a gate line, and a data line disposed on the substrate. A thin film transistor is connected to the gate line and the data line. A first photo-sensing member is disposed on the substrate, and a first electrode is connected to the thin film transistor and the first photo-sensing member. A second photo-sensing member is disposed on the first photo-sensing member, and a second electrode is connected to the first electrode and the second photo-sensing member.
摘要:
A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.
摘要:
A liquid crystal display includes; a first substrate, a gate line and a data line disposed on the first substrate, a color filter including protrusions and depressions aligned with the data line, the color filter being disposed on the data line, a pixel electrode disposed on the color filter, a second substrate facing the first substrate, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate.
摘要:
Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.
摘要:
A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.
摘要翻译:薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层,其中所述金属氧化物具有小于或等于3%的氧缺陷,并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3%的氧缺陷,并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬,钴,镍,铁,锰及其混合物中的至少一种3d过渡金属。