PHOTONIC SENSOR, METHOD OF MANUFACTURING SAME, COLOR FILTER SUBSTRATE HAVING SAME, AND DISPLAY DEVICE HAVING THE COLOR FILTER SUBSTRATE
    1.
    发明申请
    PHOTONIC SENSOR, METHOD OF MANUFACTURING SAME, COLOR FILTER SUBSTRATE HAVING SAME, AND DISPLAY DEVICE HAVING THE COLOR FILTER SUBSTRATE 有权
    光电传感器,其制造方法,具有它们的彩色滤色器基板以及具有彩色滤光片基板的显示装置

    公开(公告)号:US20110090437A1

    公开(公告)日:2011-04-21

    申请号:US12898250

    申请日:2010-10-05

    摘要: A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers.

    摘要翻译: 光子传感器包括第一电极层,第二电极层,第三电极层,第一光子吸收层,第二光子吸收层,第三光子吸收层和电荷阻挡层。 第一光子吸收层包括第一纳米颗粒的分散体,并且被配置为将第一有色光转换成相应的电荷。 第二光子吸收层包括第二纳米颗粒的分散体,并且被配置为根据光强度将第二有色光转换成相应的电荷。 第三光子吸收层包括第三纳米颗粒的分散体,并且被配置为根据光强度将第三有色光转换成相应的电荷。 电荷阻挡层形成在第一和第二光子吸收层之间以阻止第一和第二光子吸收层之间的电荷流动。

    DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME 有权
    显示基板,其制造方法

    公开(公告)号:US20110147740A1

    公开(公告)日:2011-06-23

    申请号:US12977853

    申请日:2010-12-23

    IPC分类号: H01L29/786 H01L21/336

    摘要: The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

    摘要翻译: 本发明公开了一种薄膜晶体管(TFT),TFT的制造方法以及使用该TFT的显示基板,其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化 的氧化物半导体。 TFT包括氧化物半导体层; 保护层,设置在所述氧化物半导体层上并与所述氧化物半导体层的沟道区域重叠; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 与所述氧化物半导体层的第二面接触且与所述源电极相对的漏电极,所述沟道区域设置在所述漏电极和所述源电极之间; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    显示基板及其制造方法

    公开(公告)号:US20100019996A1

    公开(公告)日:2010-01-28

    申请号:US12486542

    申请日:2009-06-17

    IPC分类号: G09G3/30 H01L21/00

    摘要: A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.

    摘要翻译: 显示基板包括电连接到栅极线和数据线的开关晶体管,所述数据线在基本上垂直于在第二方向延伸的栅极线的第一方向上延伸,所述开关晶体管包括包含非晶硅的开关有源图案, 电连接到驱动电压线的驱动晶体管和所述开关晶体管,所述驱动电压线在所述第一方向上延伸,所述驱动晶体管包括包含金属氧化物的驱动有源图案; 以及电连接到驱动晶体管的发光元件。

    SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
    9.
    发明申请
    SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
    传感器阵列基板及其制造方法

    公开(公告)号:US20120025189A1

    公开(公告)日:2012-02-02

    申请号:US13102824

    申请日:2011-05-06

    CPC分类号: H01L27/1446 H01L27/14683

    摘要: Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

    摘要翻译: 提供传感器阵列基板及其制造方法。 传感器阵列基板包括:限定开关元件区域和感测光的传感器区域的基板; 形成在所述传感器区域中的第一半导体层; 第一栅电极,其形成在所述第一半导体层上并与所述第一半导体层重叠; 形成在所述开关元件区域中的第二栅电极; 第二半导体层,其形成在所述第二栅电极上并与所述第二栅电极重叠; 以及形成在所述第二半导体层上并与所述第二半导体层重叠的遮光图案,其中所述第一半导体层和所述第二半导体层设置在不同的层上,并且所述第二栅电极和所述遮光图案是电 相互连接。

    THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY DEVICE
    10.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY DEVICE 有权
    薄膜晶体管基板,具有该基板的显示装置和制造显示装置的方法

    公开(公告)号:US20120003769A1

    公开(公告)日:2012-01-05

    申请号:US13233399

    申请日:2011-09-15

    IPC分类号: H01L33/08

    CPC分类号: H01L29/7869 H01L27/1225

    摘要: A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

    摘要翻译: 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层,其中所述金属氧化物具有小于或等于3%的氧缺陷,并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3%的氧缺陷,并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬,钴,镍,铁,锰及其混合物中的至少一种3d过渡金属。