Wet cleaning method to eliminate copper corrosion
    1.
    发明授权
    Wet cleaning method to eliminate copper corrosion 失效
    湿法清洗方法消除铜腐蚀

    公开(公告)号:US07022610B2

    公开(公告)日:2006-04-04

    申请号:US10743979

    申请日:2003-12-22

    IPC分类号: H01L21/302

    摘要: A method for cleaning semiconductor substrates includes a DI water clean operation that uses a spin speed no greater than 350 rpm. The cleaning method may include additional cleaning operations such as an organic clean, an aqueous chemical clean or a DI water/ozone clean. The cleaning method may be used to clean substrates after the conclusion of an etching procedure which exposes a single film between a Cu-containing conductive material and the environment. The spin speed of the DI water clean operation prevents copper corrosion due to breakdown of the film that separates the Cu-containing conductive material from the environment.

    摘要翻译: 用于清洁半导体衬底的方法包括使用不大于350rpm的旋转速度的去离子水清洁操作。 清洁方法可以包括附加的清洁操作,例如有机清洁剂,水性化学清洁剂或去离子水/臭氧清洁剂。 在完成了在含Cu导电材料和环境之间暴露单个膜的蚀刻过程结束之前,清洁方法可用于清洁衬底。 去离子水清洁操作的旋转速度可防止由于将含Cu导电材料与环境分离的膜破裂导致铜腐蚀。

    Wet cleaning method to eliminate copper corrosion
    2.
    发明申请
    Wet cleaning method to eliminate copper corrosion 失效
    湿法清洗方法消除铜腐蚀

    公开(公告)号:US20050136678A1

    公开(公告)日:2005-06-23

    申请号:US10743979

    申请日:2003-12-22

    摘要: A method for cleaning semiconductor substrates includes a DI water clean operation that uses a spin speed no greater than 350 rpm. The cleaning method may include additional cleaning operations such as an organic clean, an aqueous chemical clean or a DI water/ozone clean. The cleaning method may be used to clean substrates after the conclusion of an etching procedure which exposes a single film between a Cu-containing conductive material and the environment. The spin speed of the DI water clean operation prevents copper corrosion due to breakdown of the film that separates the Cu-containing conductive material from the environment.

    摘要翻译: 用于清洁半导体衬底的方法包括使用不大于350rpm的旋转速度的去离子水清洁操作。 清洁方法可以包括附加的清洁操作,例如有机清洁剂,水性化学清洁剂或去离子水/臭氧清洁剂。 在完成了在含Cu导电材料和环境之间暴露单个膜的蚀刻过程结束之前,清洁方法可用于清洁衬底。 去离子水清洁操作的旋转速度可防止由于将含Cu导电材料与环境分离的膜破裂导致铜腐蚀。

    Method for backside polymer reduction in dry-etch process
    5.
    发明申请
    Method for backside polymer reduction in dry-etch process 有权
    干蚀刻工艺中背面聚合物还原的方法

    公开(公告)号:US20100190349A1

    公开(公告)日:2010-07-29

    申请号:US12798201

    申请日:2010-03-30

    IPC分类号: H01L21/465 C23F1/00

    摘要: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

    摘要翻译: 防止在半导体衬底的背面形成污染性聚合物膜的方法包括提供在蚀刻操作期间释放氧气的氧浸渍聚焦环和/或氧浸渍卡盘。 该方法还通过在冷却气体混合物中混合氧将氧气输送到衬底,在蚀刻和清洁衬底期间将聚焦环保持在不高于衬底温度的温度,使用包括悬浮衬底的两步骤等离子体清洗序列 在卡盘上方

    Method for backside polymer reduction in dry-etch process
    6.
    发明授权
    Method for backside polymer reduction in dry-etch process 有权
    干蚀刻工艺中背面聚合物还原的方法

    公开(公告)号:US08529783B2

    公开(公告)日:2013-09-10

    申请号:US12798201

    申请日:2010-03-30

    IPC分类号: H01L21/302

    摘要: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

    摘要翻译: 防止在半导体衬底的背面形成污染性聚合物膜的方法包括提供在蚀刻操作期间释放氧气的氧浸渍聚焦环和/或氧浸渍卡盘。 该方法还通过在冷却气体混合物中混合氧将氧气输送到衬底,在蚀刻和清洁衬底期间将聚焦环保持在不高于衬底温度的温度,使用包括悬浮衬底的两步骤等离子体清洗序列 在卡盘上方

    Wet cleaning cavitation system and method to remove particulate wafer contamination
    8.
    发明授权
    Wet cleaning cavitation system and method to remove particulate wafer contamination 有权
    湿清洗气蚀系统和清除颗粒晶片污染的方法

    公开(公告)号:US07373941B2

    公开(公告)日:2008-05-20

    申请号:US10402593

    申请日:2003-03-28

    IPC分类号: B08B3/12 B08B7/04 B08B5/00

    摘要: A cavitation cleaning system and method for using the same to remove particulate contamination from a substrate including providing at least one substrate immersed in a cleaning solution said cleaning solution contained in a cleaning solution container. The container further includes means for producing gaseous cavitation bubbles of ultrasound energy, said gaseous cavitation bubbles arranged to contact at least a portion of the at least one substrate; applying ultrasound energy to create gaseous cavitation bubbles to contact the substrate to remove adhering residual particles in a substrate surface cleaning process; and, recirculating the cleaning solution through a particulate filtering means.

    摘要翻译: 一种空化清洁系统及其使用方法,用于从基材中除去颗粒污染物,包括提供浸入清洁溶液中的至少一种基材,所述清洗溶液中含有的清洁溶液包含在清洁溶液容器中。 所述容器还包括用于产生超声能量的气体空化气泡的装置,所述气体空化气泡布置成接触所述至少一个基底的至少一部分; 施加超声能量以产生气体气泡以接触基底以在基底表面清洁过程中除去粘附的残留颗粒; 并且通过颗粒过滤装置再循环清洁溶液。