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    Method of fabricating field emission display having a grid plate
    1.
    发明授权
    Method of fabricating field emission display having a grid plate 失效
    具有栅格板的场致发射显示器的制造方法

    公开(公告)号：US07090555B2

    公开(公告)日：2006-08-15

    申请号：US10683439

    申请日：2003-10-14

    申请人： Chun-Tao Lee ,  Ming-Chun Hsiao ,  Wei-Yi Lin ,  Yu-Yang Chang ,  Yu-Wu Wang

    发明人： Chun-Tao Lee ,  Ming-Chun Hsiao ,  Wei-Yi Lin ,  Yu-Yang Chang ,  Yu-Wu Wang

    IPC分类号： H01J9/00 ,  H01J1/88

    CPC分类号： H01J29/467 ,  H01J9/148 ,  H01J9/185 ,  H01J29/028 ,  H01J2329/8625

    摘要： A field emission display (FED) having a grid plate with spacer structure and fabrication method thereof. A first wplate having first electrodes and electron emitters on a first surface is provided. A second plate having second electrodes and phosphor regions on a second surface is also provided, wherein the second surface is opposite the first surface. A grid plate with spacer structure and passages having grid electrodes is positioned between the two plates to maintain a predetermined interval. When a specific voltage is applied between the first electrode and the second electrode, electrons extracted from the electron emitters are accelerated by the grid electrodes through the passages to impact the phosphor regions.

    摘要翻译： 具有栅格板和间隔结构的场发射显示器（FED）及其制造方法。 提供了在第一表面上具有第一电极和电子发射器的第一块板。 还提供了在第二表面上具有第二电极和荧光体区域的第二板，其中第二表面与第一表面相对。 具有间隔结构的栅格板和具有栅格电极的通道位于两个板之间以保持预定间隔。 当在第一电极和第二电极之间施加特定电压时，从电子发射器提取的电子被栅格电极通过通道加速以冲击荧光体区域。

    Field emission display and fabrication method
    2.
    发明申请
    Field emission display and fabrication method 审中-公开
    场发射显示和制造方法

    公开(公告)号：US20050275338A1

    公开(公告)日：2005-12-15

    申请号：US11207896

    申请日：2005-08-22

    申请人： Chun-Tao Lee ,  Ming-Chun Hsiao ,  Wei-Yi Lin ,  Yu-Yang Chang ,  Yu-Wu Wang

    发明人： Chun-Tao Lee ,  Ming-Chun Hsiao ,  Wei-Yi Lin ,  Yu-Yang Chang ,  Yu-Wu Wang

    IPC分类号： H01J9/24 ,  H01J9/02 ,  H01J9/18 ,  H01J29/02 ,  H01J29/46 ,  H01J29/87 ,  H01J31/12 ,  H01J1/62 ,  H01J63/04

    CPC分类号： H01J29/467 ,  H01J9/148 ,  H01J9/185 ,  H01J29/028 ,  H01J2329/8625

    摘要： A field emission display (FED) having a grid plate with spacer structure and fabrication method thereof. A first plate having first electrodes and electron emitters on a first surface is provided. A second plate having second electrodes and phosphor regions on a second surface is also provided, wherein the second surface is opposite the first surface. A grid plate with spacer structure and passages having grid electrodes is positioned between the two plates to maintain a predetermined interval. When a specific voltage is applied between the first electrode and the second electrode, electrons extracted from the electron emitters are accelerated by the grid electrodes through the passages to impact the phosphor regions.

    摘要翻译： 具有栅格板和间隔结构的场发射显示器（FED）及其制造方法。 提供了在第一表面上具有第一电极和电子发射体的第一板。 还提供了在第二表面上具有第二电极和荧光体区域的第二板，其中第二表面与第一表面相对。 具有间隔结构的栅格板和具有栅格电极的通道位于两个板之间以保持预定间隔。 当在第一电极和第二电极之间施加特定电压时，从电子发射器提取的电子被栅格电极通过通道加速以冲击荧光体区域。

    Carbon nanotube field emission display
    6.
    发明授权
    Carbon nanotube field emission display 失效
    碳纳米管场发射显示

    公开(公告)号：US06882112B2

    公开(公告)日：2005-04-19

    申请号：US10424784

    申请日：2003-04-29

    申请人： Yu-Wu Wang ,  Chun-Tao Lee ,  Cheng-Chung Lee

    发明人： Yu-Wu Wang ,  Chun-Tao Lee ,  Cheng-Chung Lee

    IPC分类号： H01J29/04 ,  G09G3/20 ,  G09G3/22 ,  H01J29/96 ,  H01J31/12 ,  G09G3/10 ,  G09G3/36 ,  H01J1/62

    CPC分类号： G09G3/22 ,  B82Y10/00 ,  G09G3/2014 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0254 ,  G09G2320/043 ,  G09G2330/021 ,  H01J31/127 ,  Y10S977/952

    摘要： A nanotube field emission display. The nanotube field emission display includes a nanotube field emission cell, an active device, and a capacitor. The nanotube field emission cell includes a cathode, a gate, and an anode, wherein the cathode has nanotubes for field emission where the gate is used. The active device includes a first electrode, a second electrode, and a control electrode, wherein the second electrode is coupled to the gate of the nanotube field emission cell. The capacitor is coupled between the gate of the nanotube field emission cell and a voltage source to store gate voltage to control illumination and gray level of the nanotube field emission cell.

    摘要翻译： 纳米管场发射显示。 纳米管场发射显示器包括纳米管场致发射单元，有源器件和电容器。 纳米管场发射单元包括阴极，栅极和阳极，其中阴极具有用于场致发射的纳米管，其中栅极被使用。 有源器件包括第一电极，第二电极和控制电极，其中第二电极耦合到纳米管场发射单元的栅极。 电容器耦合在纳米管场发射单元的栅极和电压源之间以存储栅极电压以控制纳米管场致发射单元的照明和灰度级。

    Compound semiconductor material and method for forming an active layer of a thin film transistor device
    8.
    发明申请
    Compound semiconductor material and method for forming an active layer of a thin film transistor device 有权
    用于形成薄膜晶体管器件的有源层的化合物半导体材料和方法

    公开(公告)号：US20060270197A1

    公开(公告)日：2006-11-30

    申请号：US11489469

    申请日：2006-07-20

    申请人： Jia-Chong Ho ,  Jen-Hao Lee ,  Cheng-Chung Lee ,  Yu-Wu Wang ,  Chun-Tao Lee ,  Pang Lin

    发明人： Jia-Chong Ho ,  Jen-Hao Lee ,  Cheng-Chung Lee ,  Yu-Wu Wang ,  Chun-Tao Lee ,  Pang Lin

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

    摘要翻译： 公开了一种用于形成薄膜晶体管器件的有源层的化合物半导体材料，其具有掺杂范围为0.1至30mol％的掺杂剂的II-VI族化合物，其中掺杂剂选自碱金属 - 地球金属，IIIA族元素，IVA族元素，VA族元素，VIA族元素和过渡金属。 公开了通过使用本发明的化合物半导体材料形成薄膜晶体管器件的有源层的方法。

    Compound semiconductor material and method for forming an active layer of a thin film transistor device
    9.
    发明授权
    Compound semiconductor material and method for forming an active layer of a thin film transistor device 有权
    用于形成薄膜晶体管器件的有源层的化合物半导体材料和方法

    公开(公告)号：US07666764B2

    公开(公告)日：2010-02-23

    申请号：US11489469

    申请日：2006-07-20

    申请人： Jia-Chong Ho ,  Jen-Hao Lee ,  Cheng-Chung Lee ,  Yu-Wu Wang ,  Chun-Tao Lee ,  Pzng Lin

    发明人： Jia-Chong Ho ,  Jen-Hao Lee ,  Cheng-Chung Lee ,  Yu-Wu Wang ,  Chun-Tao Lee ,  Pzng Lin

    IPC分类号： H01L21/208 ,  H01L21/84

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

    摘要翻译： 公开了一种用于形成薄膜晶体管器件的有源层的化合物半导体材料，其具有掺杂范围为0.1至30mol％的掺杂剂的II-VI族化合物，其中掺杂剂选自碱金属 - 地球金属，IIIA族元素，IVA族元素，VA族元素，VIA族元素和过渡金属。 公开了通过使用本发明的化合物半导体材料形成薄膜晶体管器件的有源层的方法。

    Compound semiconductor material and method for forming an active layer of a thin film transistor device
    10.
    发明申请
    Compound semiconductor material and method for forming an active layer of a thin film transistor device 审中-公开
    用于形成薄膜晶体管器件的有源层的化合物半导体材料和方法

    公开(公告)号：US20080296569A1

    公开(公告)日：2008-12-04

    申请号：US12149113

    申请日：2008-04-28

    申请人： Jia-Chong Ho ,  Jen-Hao Lee ,  Cheng-Chung Lee ,  Yu-Wu Wang ,  Chun-Tao Lee ,  Pang Lin

    发明人： Jia-Chong Ho ,  Jen-Hao Lee ,  Cheng-Chung Lee ,  Yu-Wu Wang ,  Chun-Tao Lee ,  Pang Lin

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

    摘要翻译： 公开了一种用于形成薄膜晶体管器件的有源层的化合物半导体材料，其具有掺杂范围为0.1至30mol％的掺杂剂的II-VI族化合物，其中掺杂剂选自碱金属 - 地球金属，IIIA族元素，IVA族元素，VA族元素，VIA族元素和过渡金属。 公开了通过使用本发明的化合物半导体材料形成薄膜晶体管器件的有源层的方法。