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公开(公告)号：US08906594B2
公开(公告)日：2014-12-09
申请号：US13524811
申请日：2012-06-15
申请人： Chunwei Chen , PingHung Lu , Weihong Liu , Medhat Toukhy , SangChul Kim , SookMee Lai
发明人： Chunwei Chen , PingHung Lu , Weihong Liu , Medhat Toukhy , SangChul Kim , SookMee Lai
CPC分类号： G03F7/028 , C08F220/18 , G03F7/027 , G03F7/033 , G03F7/0755 , G03F7/0757 , G03F7/30 , G03F7/40 , C08F2220/185 , C08F220/20 , C08F2220/281 , C08F220/06 , C08F2220/1825 , C08F212/08
摘要： Disclosed are compositions for negative-working thick film photophotoresists based on acrylic co-polymers. Also included are methods of using the compositions.
摘要翻译： 公开了基于丙烯酸共聚物的负性厚膜光致抗蚀剂的组合物。 还包括使用组合物的方法。
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公开(公告)号：US09012126B2
公开(公告)日：2015-04-21
申请号：US13524790
申请日：2012-06-15
申请人： Weihong Liu , PingHung Lu , Chunwei Chen , Stephen Meyer , Medhat Toukhy , SookMee Lai
发明人： Weihong Liu , PingHung Lu , Chunwei Chen , Stephen Meyer , Medhat Toukhy , SookMee Lai
CPC分类号： G03F7/004 , G03F7/0392 , G03F7/0397
摘要： The invention relates to a novel positive working photosensitive composition having: at least one photoacid generator; at least one novolak polymer; at least one polymer, having a polymer backbone, said polymer comprising a structure of the following formula: wherein R1-R5 are, independently, —H or —CH3, A is a linear or branched C1-C10 alkylene group, B is a C1-C12 alkyl or alicyclic group, D is a linking group that may be a chemical bond, a carboxylate group, wherein the carbonyl carbon is bonded to the polymer backbone, or a —COOCH2— group, wherein the carbonyl carbon is bonded to the polymer backbone, Ar is a substituted or unsubstituted aromatic group or heteroaromatic group, E is a linear or branched C2-C10 alkylene group, G is an acid cleavable group. The invention further relates to a process for using the novel composition for forming an image.
摘要翻译： 本发明涉及一种新型的正性光敏组合物，其具有：至少一种光致酸发生剂; 至少一种酚醛清漆聚合物; 至少一种具有聚合物主链的聚合物，所述聚合物包含下式的结构：其中R 1 -R 5独立地是-H或-CH 3，A是直链或支链C 1 -C 10亚烷基，B是C1 -C 12烷基或脂环基，D是可以是化学键的连接基团，其中羰基碳键合到聚合物主链上的羧酸酯基团或-COOCH 2 - 基团，其中羰基碳键合到聚合物上 骨架，Ar是取代或未取代的芳基或杂芳基，E是直链或支链C 2 -C 10亚烷基，G是酸可裂解基团。 本发明还涉及使用该组合物形成图像的方法。
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公开(公告)号：US07524606B2
公开(公告)日：2009-04-28
申请号：US11103093
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.
摘要翻译： 本发明涉及适用于作为正性光致抗蚀剂的成像曝光和显影的光致抗蚀剂组合物，其包含正性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 正光致抗蚀剂组合物可以选自（1）包含（i）具有酸不稳定基团的成膜树脂和（ii）光酸产生剂的组合物的组合物，或（2）包含（i）成膜酚醛清漆 树脂，和（ii）光活性化合物，或（3）包含（i）成膜树脂，（ii）光致酸发生剂和（iii）溶解抑制剂的组合物。
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公开(公告)号：US20070141510A1
公开(公告)日：2007-06-21
申请号：US11627545
申请日：2007-01-26
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator
摘要翻译： 本发明涉及一种光刻胶组合物，其适用于作为负性光致抗蚀剂的成像曝光和显影，其包含负性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 负光致抗蚀剂组合物选自（1）包含（i）树脂粘合剂，（ii）光致酸产生剂和（iii）交联剂）的组合物; 或（2）包含（i）树脂粘合剂，（ii）任选的可加成聚合的烯属不饱和化合物和（iii）光引发剂的组合物; 或（3）包含（i）含有至少两个侧链不饱和基团的光聚合化合物的组合物; （ii）烯属不饱和光聚合聚环氧烷亲水化合物; 和（iii）光引发剂
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公开(公告)号：US20070231735A1
公开(公告)日：2007-10-04
申请号：US11390716
申请日：2006-03-28
申请人： Georg Pawlowski , Chunwei Chen , Joseph Oberlander , Robert Plass
发明人： Georg Pawlowski , Chunwei Chen , Joseph Oberlander , Robert Plass
IPC分类号： G03C1/00
CPC分类号： G03F7/033 , G03F7/027 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/117
摘要： The present invention relates to a negative photoresist composition comprising, a) at least one alkali-soluble polymer, where the polymer comprises at least one unit of structure 1, where, R′ is selected independently from hydrogen, (C1-C4)alkyl, chlorine, bromine and m is an integer from 1 to 4; b) at least one monomer of structure 1, where, W is a multivalent linking group, R1 to R6 are independently selected from hydrogen, hydroxyl, (C1-C20) alkyl and chlorine, X1 and X2 are independently oxygen or N—R7, where R7 is hydrogen or (C1-C20) alkyl, and n is and integer equal to or greater than 1, and c) at least one photoinitiator. The invention also relates to a process for imaging the negative photoresist composition.
摘要翻译： 本发明涉及负性光致抗蚀剂组合物，其包含：a）至少一种碱溶性聚合物，其中聚合物包含至少一个结构单元1，其中R'独立地选自氢，（C 1 < 烷基，氯，溴，m为1至4的整数; b）结构1的至少一种单体，其中W是多价连接基团，R 1至R 6独立地选自氢，羟基，（C
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公开(公告)号：US20060228644A1
公开(公告)日：2006-10-12
申请号：US11103093
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.
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公开(公告)号：US20060228645A1
公开(公告)日：2006-10-12
申请号：US11103134
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator
摘要翻译： 本发明涉及一种光刻胶组合物，其适用于作为负性光致抗蚀剂的成像曝光和显影，其包含负性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 负光致抗蚀剂组合物选自（1）包含（i）树脂粘合剂，（ii）光致酸产生剂和（iii）交联剂）的组合物; 或（2）组合物，其包含（i）树脂粘合剂，（ii）任选的可加成聚合的烯属不饱和化合物和（iii）光引发剂; 或（3）包含（i）含有至少两个侧链不饱和基团的光聚合化合物的组合物; （ii）烯属不饱和光聚合聚环氧烷亲水化合物; 和（iii）光引发剂
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公开(公告)号：US07601482B2
公开(公告)日：2009-10-13
申请号：US11390716
申请日：2006-03-28
申请人： Georg Pawlowski , Chunwei Chen , Joseph Oberlander , Robert Plass
发明人： Georg Pawlowski , Chunwei Chen , Joseph Oberlander , Robert Plass
CPC分类号： G03F7/033 , G03F7/027 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/117
摘要： The present invention relates to a negative photoresist composition comprising, a) at least one alkali-soluble polymer, where the polymer comprises at least one unit of structure 1, where, R′ is selected independently from hydrogen, (C1-C4)alkyl, chlorine, bromine and m is an integer from 1 to 4; b) at least one monomer of structure 1, where, W is a multivalent linking group, R1 to R6 are independently selected from hydrogen, hydroxyl, (C1-C20) alkyl and chlorine, X1 and X2 are independently oxygen or N—R7, where R7 is hydrogen or (C1-C20) alkyl, and n is and integer equal to or greater than 1, and c) at least one photoinitiator. The invention also relates to a process for imaging the negative photoresist composition.
摘要翻译： 本发明涉及负性光致抗蚀剂组合物，其包含：a）至少一种碱溶性聚合物，其中聚合物包含至少一个结构单元1，其中R'独立地选自氢，（C 1 -C 4）烷基， 氯，溴和m是1至4的整数; b）结构1的至少一种单体，其中W是多价连接基团，R 1至R 6独立地选自氢，羟基，（C 1 -C 20）烷基和氯，X 1和X 2独立地是氧或N-R 7， 其中R 7为氢或（C 1 -C 20）烷基，n为整数等于或大于1，和c）至少一种光引发剂。 本发明还涉及用于对负性光致抗蚀剂组合物进行成像的方法。
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公开(公告)号：US07247419B2
公开(公告)日：2007-07-24
申请号：US11103134
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.
摘要翻译： 本发明涉及一种光刻胶组合物，其适用于作为负性光致抗蚀剂的成像曝光和显影，其包含负性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 负光致抗蚀剂组合物选自（1）包含（i）树脂粘合剂，（ii）光致酸产生剂和（iii）交联剂）的组合物; 或（2）组合物，其包含（i）树脂粘合剂，（ii）任选的可加成聚合的烯属不饱和化合物和（iii）光引发剂; 或（3）包含（i）含有至少两个侧链不饱和基团的光聚合化合物的组合物; （ii）烯属不饱和光聚合聚环氧烷亲水化合物; 和（iii）光引发剂。
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