利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.018 秒)

    Dual step source/drain extension junction anneal to reduce the junction depth: multiple-pulse low energy laser anneal coupled with rapid thermal anneal
    1.
    发明申请
    Dual step source/drain extension junction anneal to reduce the junction depth: multiple-pulse low energy laser anneal coupled with rapid thermal anneal 有权
    双级源极/漏极延伸结退火以减少结深度：多脉冲低能激光退火与快速热退火相结合

    公开(公告)号：US20050158956A1

    公开(公告)日：2005-07-21

    申请号：US10759671

    申请日：2004-01-16

    申请人： Chyiu Poon ,  Leng Tan ,  Byung Cho ,  Alex See ,  Mousumi Bhat

    发明人： Chyiu Poon ,  Leng Tan ,  Byung Cho ,  Alex See ,  Mousumi Bhat

    IPC分类号： H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/8238 ,  H01L21/336

    CPC分类号： H01L21/268 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823418

    摘要： A process is described to form a semiconductor device such as MOSFET or CMOS with shallow junctions in the source/drain extension regions. After forming the shallow trench isolations and the gate stack, sidewall dielectric spacers are removed. A pre-amorphizing implant (PAI) is performed with Ge+ or Si+ ions to form a thin PAI layer on the surface of the silicon regions adjacent to the gate stack. B+ ion implantation is then performed to form source/drain extension (SDE) regions. The B+ implant step is then followed by multiple-pulsed 248 nm KrF excimer laser anneal with pulse duration of 23 ns. This step is to reduce the sheet resistance of the junction through the activation of the boron dopant in the SDE junctions. Laser anneal is then followed by rapid thermal anneal (RTA) to repair the residual damage and also to induce out-diffusion of the boron to yield shallower junctions than the just-implanted junctions prior to RTA.

    摘要翻译： 描述了一种工艺以在源极/漏极延伸区域中形成具有浅结的诸如MOSFET或CMOS的半导体器件。 在形成浅沟槽隔离物和栅极堆叠之后，去除侧壁电介质间隔物。 用Ge + +或Si + +离子进行预非晶化植入物（PAI），以在邻近栅叠层的硅区域的表面上形成薄的PAI层。 然后进行离子注入以形成源极/漏极延伸（SDE）区域。 然后，B + / /> /注入步骤之后是脉冲持续时间为23ns的多脉冲248nm KrF准分子激光退火。 该步骤是通过SDE结中的硼掺杂剂的激活来降低结的薄层电阻。 然后激光退火之后是快速热退火（RTA），以修复残余损伤，并且还引起硼的扩散，从而产生比RTA之前刚刚植入的结更浅的结。

    Bone-filling composition for stimulating bone-forming and bone-consolidation comprising calcium sulfate and viscous biopolymers
    2.
    发明申请
    Bone-filling composition for stimulating bone-forming and bone-consolidation comprising calcium sulfate and viscous biopolymers 失效
    用于刺激骨形成和骨固化的骨填充组合物，其包含硫酸钙和粘性生物聚合物

    公开(公告)号：US20060165799A1

    公开(公告)日：2006-07-27

    申请号：US10528749

    申请日：2002-09-30

    申请人： In-San Kim ,  Byung Cho

    发明人： In-San Kim ,  Byung Cho

    IPC分类号： A61K33/06 ,  A61K9/14

    CPC分类号： A61K33/06 ,  A61K33/10 ,  A61L27/446 ,  A61L2430/02 ,  A61K2300/00

    摘要： The present invention relates to a composition for bone-filling, more particularly, to a bone-filling composition for stimulating bone-formation and bone consolidation comprising calcium sulfate and viscous biopolymers. The composition of the present invention can easily be administered into the missing part of injured bone. Since the composition of the present invention does not diffuse to surrounding organs, it can effectively be used for bone-filling material suitable for body.

    摘要翻译： 本发明涉及一种用于骨填充的组合物，更具体地涉及一种用于刺激骨形成和骨固定的骨填充组合物，其包含硫酸钙和粘性生物聚合物。 本发明的组合物可以容易地施用于受损骨的缺损部分。 由于本发明的组合物不会扩散到周围的器官，所以可以有效地用于适合身体的骨填充材料。

    Time shift apparatus and method for digital multimedia broadcasting terminal
    4.
    发明申请
    Time shift apparatus and method for digital multimedia broadcasting terminal 审中-公开
    数字多媒体广播终端的时移装置及方法

    公开(公告)号：US20070274376A1

    公开(公告)日：2007-11-29

    申请号：US11711500

    申请日：2007-02-27

    申请人： Sun Jang ,  Byung Cho

    发明人： Sun Jang ,  Byung Cho

    IPC分类号： H04L25/20

    CPC分类号： H04N21/435 ,  H04N21/235 ,  H04N21/41407 ,  H04N21/4143 ,  H04N21/4325 ,  H04N21/4333 ,  H04N21/8456

    摘要： A time shift apparatus and method for a digital multimedia broadcasting (DMB) terminal are disclosed wherein bookmarks are automatically placed at individual programs during time-shift recording of broadcast data, thereby enabling movement between programs. A broadcast data recording method comprises performing, in response to a request for a time-shift/bookmark operation during reception of DMB broadcast data, a time-shift operation; finding start times of individual programs in the broadcast data during the time-shift operation; and inserting a bookmark at each program and storing the broadcast data.

    摘要翻译： 公开了一种用于数字多媒体广播（DMB）终端的时移装置和方法，其中在广播数据的时移记录期间书签被自动放置在各个节目上，从而使得节目之间的移动。 广播数据记录方法包括响应于在DMB广播数据的接收期间对时移/书签操作的请求执行时移操作; 在时移操作期间查找广播数据中的各个节目的开始时间; 并在每个节目处插入书签并存储广播数据。

    Thermally stable fully silicided Hf silicide metal gate electrode
    5.
    发明申请
    Thermally stable fully silicided Hf silicide metal gate electrode 审中-公开
    热稳定的全硅化物铪硅化物金属栅电极

    公开(公告)号：US20060273410A1

    公开(公告)日：2006-12-07

    申请号：US11146582

    申请日：2005-06-07

    申请人： Chang Park ,  Byung Cho

    发明人： Chang Park ,  Byung Cho

    IPC分类号： H01L29/76

    CPC分类号： H01L29/4975 ,  H01L21/28097

    摘要： A method is described for forming an n-MOSFET with a fully silicided Hf suicide gate electrode that has a work function essentially the same as n+ polysilicon. An in-situ phosphorous doped polysilicon film is deposited on a gate dielectric layer on a CMOS substrate and annealed at 900° C. After native oxides are removed, a Hf layer is sputter deposited on the doped polysilicon. A W capping layer is formed on the Hf layer to prevent oxidation during a subsequent silicidation. Following the silicidation, W and unreacted Hf are removed. A permanent TaN capping layer is deposited on the HfSi layer to suppress oxidation and reduce sheet resistance. There is no meaningful change in EOT or flat band voltage even after a RTA at 950° C. for 30 seconds. The resulting Hf silicide has a composition ratio of 0.9 according to RBS and has a work function of about 4.23 eV.

    摘要翻译： 描述了一种用于形成具有完全硅化的Hf硅化物栅电极的n-MOSFET的方法，其具有与n + +多晶硅基本相同的功函数。 原位磷掺杂多晶硅膜沉积在CMOS衬底上的栅极电介质层上并在900℃下退火。在去除了天然氧化物之后，在掺杂多晶硅上溅射沉积Hf层。 在Hf层上形成W覆盖层，以防止后续硅化处理中的氧化。 硅化后，除去W和未反应的Hf。 在HfSi层上沉积永久性TaN覆盖层以抑制氧化并降低薄层电阻。 即使在950℃的RTA下30秒，EOT或平带电压也没有任何有意义的变化。 根据RBS，得到的Hf硅化物的组成比为0.9，具有约4.23eV的功函数。

    Method of depositing thin film on wafer
    7.
    发明申请
    Method of depositing thin film on wafer 审中-公开
    在薄片上沉积薄膜的方法

    公开(公告)号：US20050003088A1

    公开(公告)日：2005-01-06

    申请号：US10882532

    申请日：2004-06-30

    申请人： Young Park ,  Byung Cho ,  Hong Lim ,  Sang Lee ,  Sahng Lee ,  Tae Seo ,  Ho Chang

    发明人： Young Park ,  Byung Cho ,  Hong Lim ,  Sang Lee ,  Sahng Lee ,  Tae Seo ,  Ho Chang

    IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/44 ,  H01L21/3065 ,  H01L21/31

    CPC分类号： H01J37/32862 ,  C23C16/4405

    摘要： Provided is a method of depositing a thin film on a wafer. The method includes an operation of loading a wafer on a wafer block; an operation of depositing a thin film on the wafer after loading the wafer; an operation of unloading the wafer on which the thin film is deposited from the wafer block; an operation of dry cleaning to remove thin films accumulated on an inner surface of the chamber after unloading the wafer; and an operation of chamber seasoning to form an atmosphere for depositing the main thin film after dry cleaning, wherein the dry cleaning operation comprises: an operation of loading a dummy wafer on the wafer block after unloading the wafer; an operation of main dry cleaning to remove the thin films accumulated on the inner surface of the chamber by dry cleaning by supplying an inert gas and a cleaning gas and supplying a RF energy to the chamber; an operation of sub-dry cleaning to remove an element of the cleaning gas used in the operation of main dry cleaning and remaining on the surface of the chamber by activating a gas selected from the group consisting of H2, NH3, Ar, and N2 by applying RF energy into the chamber while discontinuing supplying of the cleaning gas into the chamber; and an operation of unloading the dummy wafer from the wafer block after the sub-dry cleaning operation.

    摘要翻译： 提供了一种在晶片上沉积薄膜的方法。 该方法包括将晶片装载在晶片块上的操作; 在加载晶片之后在晶片上沉积薄膜的操作; 从晶片块卸载其上沉积有薄膜的晶片的操作; 干燥清洗操作，以在卸载晶片之后去除积聚在室内表面上的薄膜; 以及室内调节的操作，以形成用于在干洗后沉积主薄膜的气氛，其中所述干洗操作包括：在卸载晶片之后将晶片块上的虚设晶片加载的操作; 主干燥操作，通过供给惰性气体和清洁气体并向室提供RF能量通过干洗来除去积聚在室内表面上的薄膜; 通过将通过活化从由H 2，NH 3，Ar和N 2组成的组中选出的气体来除去主要干洗操作中使用的清洁气体的元素并残留在室的表面上的次干洗操作， 在停止将清洁气体供应到所述室中的同时将RF能量施加到所述室中; 以及在次干洗操作之后从晶片块卸载虚设晶片的操作。