公开(公告)号：US11264425B2

公开(公告)日：2022-03-01

申请号：US16695265

申请日：2019-11-26

申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives

发明人： Jean-Louis Ouvrier-Buffet ,  Abdelkader Aliane ,  Jean-Michel Hartmann ,  Julie Widiez

IPC分类号： H01L27/146 ,  H01L21/02

摘要： A process for fabricating an optoelectronic device including an array of germanium-based photodiodes including the following steps: producing a stack of semiconductor layers, made from germanium; producing trenches; depositing a passivation intrinsic semiconductor layer, made from silicon; annealing, ensuring, for each photodiode, an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of a semiconductor portion, thus forming a peripheral zone of the semiconductor portion, made from silicon-germanium.

公开(公告)号：US10083942B2

公开(公告)日：2018-09-25

申请号：US15524032

申请日：2015-11-03

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Bastien Letowski ,  Jean-Christophe Crebier ,  Nicolas Rouger ,  Julie Widiez

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L25/07 ,  H01L23/367 ,  H01L25/18 ,  H01L23/498 ,  H01L23/00 ,  H01L23/373

CPC分类号： H01L25/071 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/3735 ,  H01L23/49805 ,  H01L24/26 ,  H01L24/32 ,  H01L25/072 ,  H01L25/074 ,  H01L25/18 ,  H01L2224/29013 ,  H01L2224/291 ,  H01L2224/3003 ,  H01L2224/3012 ,  H01L2224/32141 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19101 ,  H01L2924/00012 ,  H01L2224/45099

摘要： An electronic power device including: a first electronic power component in which all the electrodes are arranged at a first main face of the first electronic power component; and an electric contact element in which a first main face is arranged against the first main face of the first electronic power component and which includes plural separate electrically conductive portions to which the electrodes of the first electronic power component are electrically connected. The first electronic power component and the electric contact element together form a stack such that a first lateral face of each of the portions of the electric contact element, substantially perpendicular to the first main face of the electric contact element, is arranged against at least one metallization of a support forming an electric contact of the first electronic power component.

公开(公告)号：US09991191B2

公开(公告)日：2018-06-05

申请号：US15585293

申请日：2017-05-03

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Bastien Letowski ,  Jean-Christophe Crebier ,  Nicolas Rouger ,  Julie Widiez

IPC分类号： H01L23/48 ,  H01L23/367 ,  H01L23/495 ,  H02M7/537

CPC分类号： H01L23/49562 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/4951 ,  H01L23/49541 ,  H01L23/49589 ,  H01L23/49838 ,  H01L23/49844 ,  H02M7/537

摘要： Electronic power device comprising: an active layer comprising several lateral and/or semi-lateral components for which the electrodes are located on a front face of the active layer; an interconnection structure comprising several conducting portions to which component electrodes are connected, and located in contact with these electrodes extending parallel to the active layer; a support comprising a front face on which electrically conducting tracks are located, and in which: the interconnection structure is located between the active layer and the support, the conducting portions being placed in contact with the conducting tracks, or the active layer is placed between the interconnection structure and the support, the conducting portions comprising parts extending next to the active layer and connected to the conducting tracks.

公开(公告)号：US20170323846A1

公开(公告)日：2017-11-09

申请号：US15585293

申请日：2017-05-03

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Bastien LETOWSKI ,  Jean-Christophe Crebier ,  Nicolas Rouger ,  Julie Widiez

IPC分类号： H01L23/495 ,  H01L23/367 ,  H02M7/537

CPC分类号： H01L23/49562 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/4951 ,  H01L23/49541 ,  H01L23/49589 ,  H01L23/49838 ,  H01L23/49844 ,  H02M7/537

摘要： Electronic power device comprising: an active layer comprising several lateral and/or semi-lateral components for which the electrodes are located on a front face of the active layer; an interconnection structure comprising several conducting portions to which component electrodes are connected, and located in contact with these electrodes extending parallel to the active layer; a support comprising a front face on which electrically conducting tracks are located, and in which: the interconnection structure is located between the active layer and the support, the conducting portions being placed in contact with the conducting tracks, or the active layer is placed between the interconnection structure and the support, the conducting portions comprising parts extending next to the active layer and connected to the conducting tracks.

公开(公告)号：US20240030033A1

公开(公告)日：2024-01-25

申请号：US18257217

申请日：2021-11-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SOITEC

发明人： Gweltaz Gaudin ,  Ionut Radu ,  Franck Fournel ,  Julie Widiez ,  Didier Landru

IPC分类号： H01L21/18 ,  H01L21/762 ,  H01L21/02 ,  H01L21/322

CPC分类号： H01L21/187 ,  H01L21/76254 ,  H01L21/02002 ,  H01L21/3221

摘要： A method for producing a semiconductor structure comprises: a) providing a working layer of a semiconductor material; b) providing a carrier substrate of a semiconductor material; c) depositing a thin film of a semiconductor material different from that or those of the working layer and the carrier substrate on a free face to be joined of the working layer and/or the carrier substrate; d) directly joining the free faces of the working layer and the carrier substrate, e) annealing the joined structure at an elevated temperature to bring about segmentation of the encapsulated thin film and form a semiconductor structure comprising an interface region between the working layer and the carrier substrate, the interface region comprising: —regions of direct contact between the working layer and the carrier substrate; and —agglomerates comprising the semiconductor material of the thin film adjacent the regions of direct contact.

公开(公告)号：US20240312831A1

公开(公告)日：2024-09-19

申请号：US18566474

申请日：2022-05-25

申请人： SOITEC ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Alexis Drouin ,  Gweltaz Gaudin ,  Séverin Rouchier ,  Walter Schwarzenbach ,  Julie Widiez ,  Emmanuel Rolland

IPC分类号： H01L21/762 ,  H01L21/04

CPC分类号： H01L21/76254 ,  H01L21/0445

摘要： A method for producing a semiconductor structure comprises: a) provision of a monocrystalline silicon carbide donor substrate and a silicon carbide support substrate; b) production of a useful layer to be transferred, comprising—implanting light species in the donor substrate at a front face, so as to form a damage profile, the profile having a main peak of deep-level defects defining a buried brittle plane and a secondary peak of defects defining a damaged surface layer, and—removing the damaged surface layer by chemical etching and/or chemical mechanical polishing of the front face of the donor substrate, so as to form a new front surface of the donor substrate; c) assembly of donor substrate with the support substrate; and d) separation along the buried fragile plane, leading to the transfer of the useful layer onto the support substrate, so as to form the semiconductor structure.

公开(公告)号：US11251339B2

公开(公告)日：2022-02-15

申请号：US16583705

申请日：2019-09-26

申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives

发明人： Vincent Reboud ,  Alexei Tchelnokov ,  Julie Widiez

IPC分类号： H01L33/40 ,  H01L33/00 ,  H01L33/34 ,  H01S5/183 ,  H01S5/343

摘要： A process for fabricating an optoelectronic device for emitting infrared radiation, including: i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (Tepi), and a second bonding sublayer made from the metal of interest, iii) determining an assembly temperature (Tc) substantially between an ambient temperature (Tamb) and the epitaxy temperature (Tepi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m2; and iv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.

公开(公告)号：US11887910B2

公开(公告)日：2024-01-30

申请号：US17272843

申请日：2019-09-02

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Kremena Vladimirova ,  Jean-Christophe Crebier ,  Julie Widiez

IPC分类号： H01L23/00 ,  H01L23/373 ,  H01L23/492

CPC分类号： H01L23/3735 ,  H01L23/492 ,  H01L24/08 ,  H01L2224/05647 ,  H01L2224/80895

摘要： An electronic power module includes at least a semiconductor chip having at least one electronic power component and two metal layers between which the semiconductor chip is directly secured. At least a first of the two metal layers forms a redistribution layer having several distinct metal portions, each electrically connected to at least one electrical contact pad of the semiconductor chip, and/or at least one second of the two metal layers includes at least one first structured face arranged against the semiconductor chip and having at least one pad formed in a part of its thickness.