公开(公告)号：US20120070963A1

公开(公告)日：2012-03-22

申请号：US13201280

申请日：2010-02-12

申请人： Conor Nicholas Martin ,  Guy Raynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick po-Tsang Chen ,  Marie-Pierre Francoise Trebert Ep Fouquet

发明人： Conor Nicholas Martin ,  Guy Raynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick po-Tsang Chen ,  Marie-Pierre Francoise Trebert Ep Fouquet

IPC分类号： H01L21/20 ,  F15D1/00 ,  C23C16/34

CPC分类号： H01J37/32449 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45523 ,  C30B25/105 ,  C30B25/165 ,  C30B29/403 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0262 ,  Y10T137/8593

摘要： An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.

摘要翻译： 一种用于在基板上沉积III族金属氮化物膜的装置，该装置包括用于从氮源产生氮等离子体的等离子体发生器，其中使包含III族金属的试剂与衍生的反应性氮物质反应的反应室 从氮等离子体中沉积第III族金属氮化物到基板上，等离子体入口以促进氮等离子体从等离子体发生器通入反应室，以及具有一个或多个流动通道以使氮等离子体通过的挡板 。 挡板位于等离子体入口和基板之间，并且防止等离子体入口和基板之间的氮等离子体的直通通道。

公开(公告)号：US08910590B2

公开(公告)日：2014-12-16

申请号：US13201280

申请日：2010-02-12

申请人： Conor Nicholas Martin ,  Guy Reynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick Po-Tsang Chen ,  Marie-Pierre Francoise Wintrebert Ep Fouquet

发明人： Conor Nicholas Martin ,  Guy Reynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick Po-Tsang Chen ,  Marie-Pierre Francoise Wintrebert Ep Fouquet

IPC分类号： H01J37/32 ,  H01L21/28 ,  C23C16/30 ,  C23C16/452 ,  C23C16/455 ,  C30B29/40 ,  H01L21/02 ,  C30B25/10 ,  C30B25/16

CPC分类号： H01J37/32449 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45523 ,  C30B25/105 ,  C30B25/165 ,  C30B29/403 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0262 ,  Y10T137/8593

摘要： An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.

摘要翻译： 一种用于在基板上沉积III族金属氮化物膜的装置，该装置包括用于从氮源产生氮等离子体的等离子体发生器，其中使包含III族金属的试剂与衍生的反应性氮物质反应的反应室 从氮等离子体中沉积第III族金属氮化物到基板上，等离子体入口以促进氮等离子体从等离子体发生器通入反应室，以及具有一个或多个流动通道以使氮等离子体通过的挡板 。 挡板位于等离子体入口和基板之间，并且防止等离子体入口和基板之间的氮等离子体的直通通道。