公开(公告)号：US08910590B2

公开(公告)日：2014-12-16

申请号：US13201280

申请日：2010-02-12

申请人： Conor Nicholas Martin ,  Guy Reynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick Po-Tsang Chen ,  Marie-Pierre Francoise Wintrebert Ep Fouquet

发明人： Conor Nicholas Martin ,  Guy Reynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick Po-Tsang Chen ,  Marie-Pierre Francoise Wintrebert Ep Fouquet

IPC分类号： H01J37/32 ,  H01L21/28 ,  C23C16/30 ,  C23C16/452 ,  C23C16/455 ,  C30B29/40 ,  H01L21/02 ,  C30B25/10 ,  C30B25/16

CPC分类号： H01J37/32449 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45523 ,  C30B25/105 ,  C30B25/165 ,  C30B29/403 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0262 ,  Y10T137/8593

摘要： An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.

摘要翻译： 一种用于在基板上沉积III族金属氮化物膜的装置，该装置包括用于从氮源产生氮等离子体的等离子体发生器，其中使包含III族金属的试剂与衍生的反应性氮物质反应的反应室 从氮等离子体中沉积第III族金属氮化物到基板上，等离子体入口以促进氮等离子体从等离子体发生器通入反应室，以及具有一个或多个流动通道以使氮等离子体通过的挡板 。 挡板位于等离子体入口和基板之间，并且防止等离子体入口和基板之间的氮等离子体的直通通道。

公开(公告)号：US20120070963A1

公开(公告)日：2012-03-22

申请号：US13201280

申请日：2010-02-12

申请人： Conor Nicholas Martin ,  Guy Raynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick po-Tsang Chen ,  Marie-Pierre Francoise Trebert Ep Fouquet

发明人： Conor Nicholas Martin ,  Guy Raynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick po-Tsang Chen ,  Marie-Pierre Francoise Trebert Ep Fouquet

IPC分类号： H01L21/20 ,  F15D1/00 ,  C23C16/34

CPC分类号： H01J37/32449 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45523 ,  C30B25/105 ,  C30B25/165 ,  C30B29/403 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0262 ,  Y10T137/8593

摘要： An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.

摘要翻译： 一种用于在基板上沉积III族金属氮化物膜的装置，该装置包括用于从氮源产生氮等离子体的等离子体发生器，其中使包含III族金属的试剂与衍生的反应性氮物质反应的反应室 从氮等离子体中沉积第III族金属氮化物到基板上，等离子体入口以促进氮等离子体从等离子体发生器通入反应室，以及具有一个或多个流动通道以使氮等离子体通过的挡板 。 挡板位于等离子体入口和基板之间，并且防止等离子体入口和基板之间的氮等离子体的直通通道。

公开(公告)号：US08298624B2

公开(公告)日：2012-10-30

申请号：US11575897

申请日：2005-09-27

申请人： Kenneth Scott Alexander Butcher ,  Marie-Pierre Francoise Wintrebert ep Fouquet ,  Patrick Po-Tsang Chen ,  John Leo Paul Ten Have ,  David Ian Johnson

发明人： Kenneth Scott Alexander Butcher ,  Marie-Pierre Francoise Wintrebert ep Fouquet ,  Patrick Po-Tsang Chen ,  John Leo Paul Ten Have ,  David Ian Johnson

IPC分类号： H05H1/24

CPC分类号： C30B25/10 ,  C23C16/303 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45589 ,  C23C16/45591 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/0262

摘要： A process and apparatus for growing a group (III) metal nitride film by remote plasma enhanced chemical vapor deposition are described. The process comprises heating an object selected from the group consisting of a substrate and a substrate comprising a buffer layer in a growth chamber to a temperature in the range of from about 400° C. to o about 750° C., producing active neutral nitrogen species in a nitrogen plasma remotely located from the growth chamber and transferring the active neutral nitrogen species to the growth chamber. A reaction mixture is formed in the growth chamber, the reaction mixture containing a species of a group (III) metal that is capable of reacting with the nitrogen species so as to form a group (III) metal nitride film and a film of group (III) s metal nitride is formed on the heated object under conditions whereby the film is suitable for device purposes. Also described is a group (III) metal nitride film which exhibits an oxygen concentration below 1.6 atomic %.

摘要翻译： 描述了通过远程等离子体增强化学气相沉积生长第（III）族金属氮化物膜的方法和装置。 该方法包括将从生长室中的基材和包含缓冲层的底物中选出的物体加热至约400℃至约750℃的温度，产生活性中性氮 远离生长室的氮等离子体中的物质并将活性中性氮物质转移到生长室。 在生长室中形成反应混合物，反应混合物含有可与氮物质反应的第（III）族金属，以形成第（III）族金属氮化物膜和基团（III） III）的金属氮化物形成在被加热物体上，在该条件下，该膜适用于器件目的。 还描述了氧浓度低于1.6原子％的第（III）族金属氮化物膜。

公开(公告)号：US20080272463A1

公开(公告)日：2008-11-06

申请号：US11575897

申请日：2005-09-27

申请人： Kenneth Scott Alexander Butcher ,  Marie-Pierre Francoise Wintrebert ep Fouquet ,  Patrick Po-Tsang Chen ,  John Leo Paul Ten Have ,  David Ian Johnson

发明人： Kenneth Scott Alexander Butcher ,  Marie-Pierre Francoise Wintrebert ep Fouquet ,  Patrick Po-Tsang Chen ,  John Leo Paul Ten Have ,  David Ian Johnson

IPC分类号： H01L21/20 ,  C23C16/00 ,  H01L29/20

CPC分类号： C30B25/10 ,  C23C16/303 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45589 ,  C23C16/45591 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/0262

摘要： A process and apparatus for growing a group (III) metal nitride film by remote plasma enhanced chemical vapour deposition are described. The process comprises heating an object selected from the group consisting of a substrate and a substrate comprising a buffer layer in a growth chamber to a temperature in the range of from about 400° C. to o about 750° C., producing active neutral nitrogen species in a nitrogen plasma remotely located from the growth chamber and transferring the active neutral nitrogen species to the growth chamber. A reaction mixture is formed in the growth chamber, the reaction mixture containing a species of a group (III) metal that is capable of reacting with the nitrogen species so as to form a group (III) metal nitride film and a film of group (III) s metal nitride is formed on the heated object under conditions whereby the film is suitable for device purposes. Also described is a group (III) metal nitride film which exhibits an oxygen concentration below 1.6 atomic %.

摘要翻译： 描述了通过远程等离子体增强化学气相沉积生长第（III）族金属氮化物膜的方法和装置。 该方法包括将从生长室中的基材和包含缓冲层的底物中选出的物体加热至约400℃至约750℃的温度，产生活性中性氮 远离生长室的氮等离子体中的物质并将活性中性氮物质转移到生长室。 在生长室中形成反应混合物，反应混合物含有可与氮物质反应的第（III）族金属，以形成第（III）族金属氮化物膜和基团（III） III）的金属氮化物形成在被加热物体上，在该条件下，该膜适用于器件目的。 还描述了氧浓度低于1.6原子％的第（III）族金属氮化物膜。