公开(公告)号：US06926775B2

公开(公告)日：2005-08-09

申请号：US10365085

申请日：2003-02-11

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  C23C16/00

CPC分类号： C23C16/54 ,  C23C16/4401 ,  C23C16/45519 ,  C23C16/45544

摘要： Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

摘要翻译： 具有用于将材料沉积到微器件工件上的气体分配器的反应器，包括这种反应器的系统以及将材料沉积到微器件工件上的方法在本文中公开。 在一个实施例中，用于将材料沉积到微器件工件上的反应器包括反应室，通道和门组件。 反应室包括配置成在工件保持器上向微器件工件提供气体流的气体分配器。 具有通向反应室的第一端和远离反应室的第二端的通道构造成提供从腔室进入和离开以处理微器件工件。 门组件构造成在通道的第二端处打开并密封地关闭门。 定位在门中的气体调节系统构造成保持通道中气体成分的期望浓度和相位。

公开(公告)号：US07427425B2

公开(公告)日：2008-09-23

申请号：US10932470

申请日：2004-09-01

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

IPC分类号： C23C16/00

CPC分类号： C23C16/54 ,  C23C16/4401 ,  C23C16/45519 ,  C23C16/45544

摘要： Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

摘要翻译： 具有用于在微器件工件上沉积材料的气体分配器的反应器，包括这种反应器的系统以及将材料沉积到微器件工件上的方法。 在一个实施例中，用于将材料沉积到微器件工件上的反应器包括反应室，通道和门组件。 反应室包括配置成在工件保持器上向微器件工件提供气体流的气体分配器。 具有通向反应室的第一端和远离反应室的第二端的通道构造成提供从腔室进入和离开以处理微器件工件。 门组件构造成在通道的第二端处打开并密封地关闭门。 定位在门中的气体调节系统构造成保持通道中气体成分的期望浓度和相位。

公开(公告)号：US07378127B2

公开(公告)日：2008-05-27

申请号：US09805620

申请日：2001-03-13

申请人： Craig M. Carpenter ,  Ross S. Dando

发明人： Craig M. Carpenter ,  Ross S. Dando

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45519 ,  C23C16/45527

摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by chamber walls, a substrate holder inside the chamber, and at least one process chemical inlet to the chamber. At least one purge inlet to the chamber is positioned elevationally above the substrate holder and outside a lateral periphery of the substrate holder. The purge inlet is configured to inject at least one purge material into the chamber and past the substrate holder. The purge inlet can be positioned and configured to inject an annular purge material curtain concentric to the substrate holder. A chemical vapor deposition method includes injecting at least one purge material into a deposition chamber and forming a purge curtain from the injected purge material. The purge curtain can extend downward from elevationally above a substrate holder and outside a lateral periphery of the substrate holder. The purge curtain can flow past the substrate holder.

摘要翻译： 化学气相沉积设备包括至少部分地由室壁限定的沉积室，室内的衬底保持器，以及至室的至少一个工艺化学入口。 至少一个到室的净化入口位于衬底保持器的正上方并且位于衬底保持器的侧边外侧。 净化入口构造成将至少一种清洗材料注入室中并经过衬底保持器。 吹扫入口可以被定位和构造成将衬套保持器同心的环形吹扫材料窗口注入。 化学气相沉积方法包括将至少一种吹扫材料注入沉积室并从注入的吹扫材料形成清洗帘。 清洗帘幕可从基板保持器的正上方向下延伸并且在基板保持器的侧边外侧延伸。 清洗帘可以流过基板支架。

公开(公告)号：US06838114B2

公开(公告)日：2005-01-04

申请号：US10155547

申请日：2002-05-24

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/52

摘要： Methods for depositing materials onto micro-device workpieces in a reaction chamber. One embodiment of such a method comprises providing a flow of a first precursor through the reaction chamber to deposit the first precursor onto the micro-device workpiece in the reaction chamber, and providing a flow of a purge gas through the reaction chamber to purge excess amounts of the first precursor. The method continues by monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas in the reaction chamber as the first precursor and/or the purge gas flows through the reaction chamber. An additional aspect of this method is terminating the flow of the first precursor and/or the flow of the purge gas based on the monitored parameter of the quantity of the first precursor and/or the purge gas. The procedure of monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas can comprise determining a concentration of the first precursor and/or the purge gas in the reaction chamber using a selected radiation.

摘要翻译： 在反应室中将材料沉积到微器件工件上的方法。 这种方法的一个实施方案包括提供通过反应室的第一前体的流动，以将第一前体沉积在反应室中的微器件工件上，并且提供净化气体流过反应室以净化过量 的第一个前体。 当第一前体和/或吹扫气体流过反应室时，通过监测与反应室中的第一前体和/或吹扫气体的量相关的参数来继续该方法。 该方法的另一方面是基于所监测的第一前体和/或吹扫气体的量的参数来终止第一前体和/或吹扫气体的流动。 监测与第一前体和/或吹扫气体的量相关的参数的程序可以包括使用所选择的辐射确定反应室中的第一前体和/或吹扫气体的浓度。

公开(公告)号：US06821347B2

公开(公告)日：2004-11-23

申请号：US10191889

申请日：2002-07-08

申请人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

发明人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

IPC分类号： B05C318

CPC分类号： C23C16/45544 ,  C23C16/45565

摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

公开(公告)号：US06797337B2

公开(公告)日：2004-09-28

申请号：US10223175

申请日：2002-08-19

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

IPC分类号： B05D300

CPC分类号： C23C16/4481

摘要： A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its surface such that substantially no thermal decomposition of the remaining precursor occurs. The energy source may include a carrier gas, a radio frequency coupling device, or an infrared irradiation source. After the precursor is exposed to the energy source, the vaporized portion of the precursor is transported via a temperature-controlled conduit to a chemical vapor deposition or atomic deposition chamber for further processing.

摘要翻译： 提供了用于将前体输送到化学气相沉积或原子层沉积室的方法和装置。 该装置包括含有前体的温度控制容器。 使用能源在其表面蒸发前体，使得基本上不会发生剩余前体的热分解。 能量源可以包括载气，射频耦合装置或红外辐射源。 在前体暴露于能量源之后，前体的蒸发部分通过温度控制的导管输送到化学气相沉积或原子沉积室，用于进一步处理。

公开(公告)号：US07234412B2

公开(公告)日：2007-06-26

申请号：US10350554

申请日：2003-01-23

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

IPC分类号： C23C16/00

CPC分类号： C23C16/54 ,  C23C16/4401

摘要： A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A replacement for the removed deposition chamber liner piece is provided into the chamber by passing the replacement through said passageway. A liner apparatus includes a plurality of pieces which when assembled within a selected semiconductor substrate deposition processor chamber are configured to restrict at least a majority portion of all internal wall surfaces which define said semiconductor substrate deposition processor chamber from exposure to deposition material within the chamber. At least some of the pieces are sized for passing completely through a substrate passageway to the chamber through which semiconductor substrates pass into and out of the chamber for deposition processing.

摘要翻译： 一种方法包括通过将沉积室衬套通过通道传送到沉积室，通过半导体衬底通过其进入和离开室进行沉积处理，从沉积室去除至少一块沉积室衬里。 通过使替换通过所述通道，将移除的沉积室衬垫件的替代物提供到腔室中。 衬套装置包括多个片段，当组装在所选择的半导体衬底沉积处理器室中时，其被限定为限定所述半导体衬底沉积处理器室的所有内壁表面的至少大部分部分暴露于腔室内的沉积材料。 至少一些片的尺寸被设计成完全通过衬底通道到半导体衬底通过其进入和离开室以进行沉积处理的室。

公开(公告)号：US07185601B2

公开(公告)日：2007-03-06

申请号：US09798672

申请日：2001-03-01

申请人： Craig M. Carpenter ,  Allen P. Mardian ,  Philip H. Campbell ,  Ross S. Dando

发明人： Craig M. Carpenter ,  Allen P. Mardian ,  Philip H. Campbell ,  Ross S. Dando

IPC分类号： G01N31/22

CPC分类号： G01N21/78 ,  G01N21/293 ,  Y10S116/14

摘要： A chemically sensitive warning apparatus capable of changing colors upon contact with a chemical is disclosed. The apparatus preferably comprises an elongated tape having opposed, first and second major surfaces and warning indicia visible to an individual viewing the first surface to provide visual indication of possible danger or hazardous condition. Mounted to the tape is at least one chemical indicator that is responsive to the presence of at least one chemical by changing colors so as to provide a visual indication of the exposure of the indicator to the chemical. The tape may also include at least one color reference indicia to facilitate interpretation of the color of the chemical indicator when the chemical indicator changes color upon exposure to the chemical.

摘要翻译： 公开了能够在与化学品接触时改变颜色的化学敏感警报装置。 该装置优选地包括具有相对的第一和第二主表面的细长带，并且警告标记对于观看第一表面的个体可见以提供可能的危险或危险状况的视觉指示。 安装到胶带上的是至少一种化学指示剂，其通过改变颜色来响应至少一种化学品的存在，从而提供指示剂暴露于化学品的视觉指示。 当化学品指示剂在暴露于化学品时变色时，胶带还可以包括至少一个颜色参考标记，以便于解释化学指示剂的颜色。

公开(公告)号：US07118783B2

公开(公告)日：2006-10-10

申请号：US10183250

申请日：2002-06-26

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Dan Gealy ,  Garo J. Derderian ,  Allen P. Mardian

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Dan Gealy ,  Garo J. Derderian ,  Allen P. Mardian

IPC分类号： C23C16/02

CPC分类号： C23C16/4481

摘要： CVD, ALD, and other vapor processes used in processing semiconductor workpieces often require volatilizing a liquid or solid precursor. Certain embodiments of the invention provide improved and/or more consistent volatilization rates by moving a reaction vessel. In one exemplary embodiment, a reaction vessel is rotated about a rotation axis which is disposed at an angle with respect to vertical. This deposits a quantity of the reaction precursor on an interior surface of the vessel's sidewall which is exposed to the headspace as the vessel rotates. Other embodiments employ drivers adapted to move the reaction vessel in other manners, such as a pendulum arm to oscillate the vessel along an arcuate path or a mechanical linkage which moves the vessel along an elliptical path.

摘要翻译： 用于处理半导体工件中的CVD，ALD和其它蒸气方法通常需要挥发液体或固体前体。 本发明的某些实施方案通过移动反应容器提供改进的和/或更一致的挥发速率。 在一个示例性实施例中，反应容器围绕相对于垂直方向以一定角度设置的旋转轴线旋转。 这将一定数量的反应前体沉积在容器侧壁的内表面上，该容器的侧壁在容器旋转时暴露于顶部空间。 其他实施例使用适于以其他方式移动反应容器的驱动器，例如摆臂，以沿着沿着椭圆形路径移动容器的弓形路径或机械连杆摆动容器。

公开(公告)号：US07105208B2

公开(公告)日：2006-09-12

申请号：US10699013

申请日：2003-10-30

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell

IPC分类号： H05H1/30

CPC分类号： C23C16/45536 ,  C23C16/45525 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01Q21/0087

摘要： The invention includes methods and processes in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.

摘要翻译： 本发明包括其中利用微波辐射来在材料沉积在反应室内的衬底上以激活反应室内的至少一种组分的方法和过程。