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    Laser-assisted method for parting crystalline material
    2.
    发明授权
    Laser-assisted method for parting crystalline material 有权

    公开(公告)号：US10562130B1

    公开(公告)日：2020-02-18

    申请号：US16410487

    申请日：2019-05-13

    申请人： Cree, Inc.

    发明人： Matthew Donofrio ,  John Edmond ,  Harshad Golakia ,  Eric Mayer

    IPC分类号： H01L21/67 ,  H01L21/268 ,  H01L29/16 ,  B23K26/53 ,  B23K26/03 ,  B28D5/00 ,  B23K26/40 ,  H01L21/02

    摘要： A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

    Self-aligned floating mirror for contact vias
    3.
    发明授权
    Self-aligned floating mirror for contact vias 有权

    公开(公告)号：US10186644B2

    公开(公告)日：2019-01-22

    申请号：US14860483

    申请日：2015-09-21

    申请人： Cree, Inc.

    发明人： Eric Mayer ,  Jae Park ,  Manuel L. Breva

    IPC分类号： H01L27/15 ,  H01L33/60 ,  H01L33/62 ,  H01L25/075 ,  H01L33/40 ,  H01L33/46 ,  H01L33/08 ,  H01L33/38

    摘要： Described herein are LED chips incorporating self-aligned floating mirror layers that can be configured with contact vias. These mirror layers can be utilized to reduce dim areas seen around the contact vias due to underlying material layers without the need for the mirror layer to be designed at some tolerance distance from the electrical via. This increases mirror area, eliminating lower light reflection in the proximity of the via and producing higher light output with greater light emission uniformity. In some embodiments, the mirror layer is formed with a contact via. This allows for a self-aligning process and results in the mirror layer extending substantially from the edge of the via.