利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.012 秒)

    Strain sensor
    5.
    发明授权
    Strain sensor 有权

    公开(公告)号：US10119879B2

    公开(公告)日：2018-11-06

    申请号：US15498768

    申请日：2017-04-27

    申请人： DENSO CORPORATION

    发明人： Shoichi Takemoto ,  Shuichi Nakano ,  Nobuyuki Abe ,  Kenji Ito

    IPC分类号： G01L23/10

    摘要： A strain sensor is provided which includes a strain sensor, a first housing, a second housing joined to the first housing, and a pressure measuring mechanism firmly retained between the first housing and the second housing. The pressure measuring mechanism is gripped between a first face of the first housing and a second face of the second housing to measure compressive stress exerted by a cylinder head of an internal combustion engine on the first housing and the second housing. This structure improves the reliability of mechanical strength of the housings and the pressure measuring mechanism and provides flexibility in selecting the type of the pressure measuring mechanism.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140231874A1

    公开(公告)日：2014-08-21

    申请号：US14347863

    申请日：2012-10-17

    申请人： DENSO CORPORATION

    发明人： Shinichi Hoshi ,  Shoji Mizuno ,  Tetsu Kachi ,  Tsutomu Uesugi ,  Kazuyoshi Tomita ,  Kenji Ito

    IPC分类号： H01L29/778 ,  H01L29/66

    CPC分类号： H01L29/7787 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/861

    摘要： A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.

    摘要翻译： 半导体器件包括HEMT和二极管。 HEMT包括：在GaN层上具有GaN层作为产生二维电子气体的沟道层和AlGaN层作为阻挡层的衬底; 在与AlGaN层接触的AlGaN层上的源电极; 位于AlGaN层上的漏电极，与源极电极隔开，并与欧姆接触AlGaN层; 在源电极和漏电极之间的AlGaN层上的层间绝缘膜; 以及层间绝缘膜上的栅电极。 衬底包括在GaN层中产生二维电子气的有源层区域。 二极管包括电连接到栅电极的阳极和与漏电极电连接的阴极。