公开(公告)号：US09818856B2

公开(公告)日：2017-11-14

申请号：US14347863

申请日：2012-10-17

Applicant: DENSO CORPORATION

Inventor： Shinichi Hoshi ,  Shoji Mizuno ,  Tetsu Kachi ,  Tsutomu Uesugi ,  Kazuyoshi Tomita ,  Kenji Ito

IPC: H01L27/06 ,  H01L29/20 ,  H01L21/8234 ,  H01L29/16 ,  H01L21/388 ,  H01L29/15 ,  H01H3/20 ,  H01L27/07 ,  H01L29/74 ,  H01L29/778 ,  H01L29/66 ,  H01L21/762 ,  H01L29/861 ,  H01L29/06

CPC classification number: H01L29/7787 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/861

Abstract: A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.

公开(公告)号：US09728609B2

公开(公告)日：2017-08-08

申请号：US14389185

申请日：2012-11-01

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  DENSO CORPORATION

Inventor： Tetsuo Narita ,  Kenji Ito ,  Kazuyoshi Tomita ,  Nobuyuki Otake ,  Shinichi Hoshi ,  Masaki Matsui

IPC: H01L29/15 ,  H01L29/20 ,  C30B29/40 ,  H01L21/02 ,  C30B25/08 ,  C30B25/18 ,  H01L29/04 ,  H01L33/00

CPC classification number: H01L29/2003 ,  C30B25/08 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/0254 ,  H01L29/045 ,  H01L33/007

Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.

公开(公告)号：US10381469B2

公开(公告)日：2019-08-13

申请号：US15101156

申请日：2014-08-28

Applicant: DENSO CORPORATION

Inventor： Yoshinori Tsuchiya ,  Shinichi Hoshi ,  Kazuyoshi Tomita ,  Kenji Itoh ,  Masahito Kodama ,  Tsutomu Uesugi

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/06 ,  H01L29/417 ,  H01L29/04 ,  H01L29/66 ,  H01L23/29 ,  H01L23/31

Abstract: A semiconductor device includes a switching device having: a substrate configured by a semi-insulating material or a semiconductor; a channel forming layer on the substrate that is configured by a compound semiconductor mainly having a group III nitride; a gate structure configured by a gate electrode on the channel forming layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode on the channel forming layer at both sides of the gate structure respectively, a collapse inhibiting layer on the channel forming layer in an element region of the channel forming layer where the switching device is arranged that is configured by an insulating material; and a leakage inhibiting layer on the channel forming layer in an element isolation region of the channel forming layer surrounding the element region that is configured by an insulating material different from that of the collapse inhibiting layer.

公开(公告)号：US20140231874A1

公开(公告)日：2014-08-21

申请号：US14347863

申请日：2012-10-17

Applicant: DENSO CORPORATION

Inventor： Shinichi Hoshi ,  Shoji Mizuno ,  Tetsu Kachi ,  Tsutomu Uesugi ,  Kazuyoshi Tomita ,  Kenji Ito

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7787 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/861

Abstract: A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.

Abstract translation: 半导体器件包括HEMT和二极管。 HEMT包括：在GaN层上具有GaN层作为产生二维电子气体的沟道层和AlGaN层作为阻挡层的衬底; 在与AlGaN层接触的AlGaN层上的源电极; 位于AlGaN层上的漏电极，与源极电极隔开，并与欧姆接触AlGaN层; 在源电极和漏电极之间的AlGaN层上的层间绝缘膜; 以及层间绝缘膜上的栅电极。 衬底包括在GaN层中产生二维电子气的有源层区域。 二极管包括电连接到栅电极的阳极和与漏电极电连接的阴极。

公开(公告)号：US20150053996A1

公开(公告)日：2015-02-26

申请号：US14389185

申请日：2012-11-01

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  DENSO CORPORATION

Inventor： Tetsuo Narita ,  Kenji Ito ,  Kazuyoshi Tomita ,  Nobuyuki Otake ,  Shinichi Hoshi ,  Masaki Matsui

IPC: H01L29/20 ,  C30B29/40 ,  C30B25/18 ,  C30B25/08 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L29/2003 ,  C30B25/08 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/0254 ,  H01L29/045 ,  H01L33/007

Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.

Abstract translation: 促进了硅单晶衬底上的III族氮化物单晶的阶跃流生长。 在硅单晶衬底的表面上形成定向为硅单晶的<111>轴的氧化物层，并且III族氮化物单晶在氧化物层的表面上结晶。 因此，经历晶体生长的III族氮化物单晶的<0001>轴取向为氧化物的c轴。 当硅单晶衬底具有误差角时，发生III族氮化物单晶的阶跃流生长。 通过对形成在硅单晶和氧化物的界面处的氧化硅层进行脱氧，氧化物的取向得到改善。