公开(公告)号：US09818856B2

公开(公告)日：2017-11-14

申请号：US14347863

申请日：2012-10-17

Applicant: DENSO CORPORATION

Inventor： Shinichi Hoshi ,  Shoji Mizuno ,  Tetsu Kachi ,  Tsutomu Uesugi ,  Kazuyoshi Tomita ,  Kenji Ito

IPC: H01L27/06 ,  H01L29/20 ,  H01L21/8234 ,  H01L29/16 ,  H01L21/388 ,  H01L29/15 ,  H01H3/20 ,  H01L27/07 ,  H01L29/74 ,  H01L29/778 ,  H01L29/66 ,  H01L21/762 ,  H01L29/861 ,  H01L29/06

CPC classification number: H01L29/7787 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/861

Abstract: A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.

公开(公告)号：US10121663B2

公开(公告)日：2018-11-06

申请号：US15320799

申请日：2015-03-26

Applicant: DENSO CORPORATION

Inventor： Yoshinori Tsuchiya ,  Hiroyuki Tarumi ,  Shinichi Hoshi ,  Masaki Matsui ,  Kenji Itoh ,  Tetsuo Narita ,  Tetsu Kachi

IPC: H01L21/223 ,  H01L21/20 ,  H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L21/28 ,  H01L29/417 ,  H01L29/51

Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm−3.

公开(公告)号：US20140231874A1

公开(公告)日：2014-08-21

申请号：US14347863

申请日：2012-10-17

Applicant: DENSO CORPORATION

Inventor： Shinichi Hoshi ,  Shoji Mizuno ,  Tetsu Kachi ,  Tsutomu Uesugi ,  Kazuyoshi Tomita ,  Kenji Ito

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7787 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/861

Abstract: A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.

Abstract translation: 半导体器件包括HEMT和二极管。 HEMT包括：在GaN层上具有GaN层作为产生二维电子气体的沟道层和AlGaN层作为阻挡层的衬底; 在与AlGaN层接触的AlGaN层上的源电极; 位于AlGaN层上的漏电极，与源极电极隔开，并与欧姆接触AlGaN层; 在源电极和漏电极之间的AlGaN层上的层间绝缘膜; 以及层间绝缘膜上的栅电极。 衬底包括在GaN层中产生二维电子气的有源层区域。 二极管包括电连接到栅电极的阳极和与漏电极电连接的阴极。