公开(公告)号：US09437439B2

公开(公告)日：2016-09-06

申请号：US13666365

申请日：2012-11-01

申请人： Disco Corporation

发明人： Karl Priewasser

IPC分类号： H01L21/304 ,  B24B7/22 ,  H01L23/544 ,  H01L21/683

CPC分类号： H01L21/304 ,  B24B7/228 ,  H01L21/6835 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer processing method for reducing the thickness of a wafer to a predetermined thickness, the wafer having a chamfered portion along the outer circumference thereof. The wafer processing method includes a stacked wafer forming step of attaching a support substrate to the front side of the wafer to thereby form a stacked wafer, and a chamfered portion removing step of positioning a cutting blade having a rotation axis parallel to the stacking direction of the stacked wafer formed by the stacked wafer forming step so that the outer circumference of the cutting blade faces the chamfered portion of the wafer, and then making the cutting blade cut into the wafer from the outer circumference toward the center thereof to thereby partially remove the chamfered portion in the range corresponding to the predetermined thickness from the front side of the wafer.

摘要翻译： 一种用于将晶片的厚度减小到预定厚度的晶片处理方法，所述晶片沿着其外周具有倒角部分。 晶片处理方法包括将支撑基板附接到晶片的前侧以形成堆叠晶片的叠层晶片形成步骤，以及倒角部分去除步骤，其将具有平行于堆叠方向的旋转轴线的切割刀片 通过层叠晶片形成工序形成的堆叠晶片使得切割刀片的外周面朝向晶片的倒角部分，然后使切割刀片从外周朝向其中心切入晶片，从而部分地移除 倒角部分在与晶片正面相对应的预定厚度的范围内。

公开(公告)号：US09935010B2

公开(公告)日：2018-04-03

申请号：US15628254

申请日：2017-06-20

申请人： DISCO CORPORATION

发明人： Karl Priewasser ,  Hitoshi Hoshino

IPC分类号： H01L21/8222 ,  H01L27/01 ,  H01L21/76 ,  B23K26/08 ,  B28D5/00 ,  B23K26/364

CPC分类号： H01L21/8222 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/08 ,  B23K26/083 ,  B23K26/359 ,  B23K26/364 ,  B23K26/402 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/52 ,  B28D5/0011 ,  B28D5/0029 ,  B28D5/0082 ,  H01L21/76 ,  H01L27/01

摘要： A wafer has a device area on one side with a plurality of devices partitioned by a plurality of division lines. Either side of the wafer is attached to an adhesive tape supported by a first annular frame. A modified region is formed in the wafer along the division lines by a laser. The wafer is placed on a support member whose outer diameter is smaller than an inner diameter of the first annular frame. After applying the laser beam, the adhesive tape is expanded thereby dividing the wafer along the division lines. A second annular frame is attached to a portion of the expanded adhesive tape. An inner diameter of the second annular frame is smaller than the outer diameter of the support member and smaller than the inner diameter of the first annular frame.

公开(公告)号：US10319593B2

公开(公告)日：2019-06-11

申请号：US15209292

申请日：2016-07-13

申请人： DISCO CORPORATION

发明人： Kazuya Hirata ,  Yoko Nishino ,  Hiroshi Morikazu ,  Karl Priewasser

IPC分类号： H01L21/04 ,  H01L29/16 ,  B23K26/53 ,  B28D5/00 ,  H01L21/268 ,  H01L21/304 ,  H01L21/683 ,  B23K26/00 ,  B23K26/03 ,  B23K26/08 ,  B23K26/70 ,  B23K26/0622 ,  B23K26/60 ,  H01L21/67 ,  B23K101/40 ,  B23K103/00

摘要： Disclosed herein is a wafer thinning method for thinning a wafer formed from an SiC substrate having a first surface and a second surface opposite to the first surface. The wafer thinning method includes an annular groove forming step of forming an annular groove on the second surface of the SiC substrate in an annular area corresponding to the boundary between a device area and a peripheral marginal area in the condition where a thickness corresponding to the finished thickness of the wafer after thinning is left, and a separation start point forming step of applying the laser beam to the second surface as relatively moving a focal point and the SiC substrate to thereby form a modified layer and cracks inside the SiC substrate at the predetermined depth.

公开(公告)号：US20170025275A1

公开(公告)日：2017-01-26

申请号：US15209292

申请日：2016-07-13

申请人： DISCO CORPORATION

发明人： Kazuya Hirata ,  Yoko Nishino ,  Hiroshi Morikazu ,  Karl Priewasser

IPC分类号： H01L21/04 ,  H01L21/268 ,  H01L21/304 ,  H01L29/16

CPC分类号： H01L21/0475 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/0823 ,  B23K26/0853 ,  B23K26/53 ,  B23K26/60 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/67092 ,  H01L21/6836 ,  H01L29/1608 ,  H01L2221/68327 ,  H01L2221/6834

摘要： Disclosed herein is a wafer thinning method for thinning a wafer formed from an SiC substrate having a first surface and a second surface opposite to the first surface. The wafer thinning method includes an annular groove forming step of forming an annular groove on the second surface of the SiC substrate in an annular area corresponding to the boundary between a device area and a peripheral marginal area in the condition where a thickness corresponding to the finished thickness of the wafer after thinning is left, and a separation start point forming step of applying the laser beam to the second surface as relatively moving a focal point and the SiC substrate to thereby form a modified layer and cracks inside the SiC substrate at the predetermined depth.

摘要翻译： 这里公开了一种用于使由SiC衬底形成的晶片变薄的晶片稀化方法，该晶片具有与第一表面相对的第一表面和第二表面。 晶片变薄方法包括一个环形槽形成步骤，该步骤在SiC衬底的第二表面上形成环形区域，该环形区域对应于器件区域和外围边缘区域之间的边界，其中对应于完成的厚度 剩余薄片后的晶片厚度，以及分离开始点形成步骤，将相对移动焦点和SiC衬底的激光束施加到第二表面，从而形成改性层，并在预定的SiC衬底内部开裂 深度。

公开(公告)号：US08828803B2

公开(公告)日：2014-09-09

申请号：US13931039

申请日：2013-06-28

申请人： Disco Corporation

发明人： Karl Priewasser

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L24/96 ,  H01L2924/181 ,  H01L2924/00

摘要： A resin sealing method for a plurality of semiconductor chips. The resin sealing method includes a chip holding sheet attaching step of attaching a chip holding sheet through an adhesive ring to a support substrate, a semiconductor chip attaching step of attaching the front side of each semiconductor chip to an adhesive layer constituting the chip holding sheet in an area corresponding to the inside of the adhesive ring, a resin sealing step of sealing all of the semiconductor chips with a mold resin, a support substrate removing step of removing the support substrate from the chip holding sheet on which the semiconductor chips are attached and sealed with the mold resin, and a chip holding sheet peeling step of peeling the chip holding sheet from the front side of each semiconductor chip sealed with the mold resin.

摘要翻译： 一种用于多个半导体芯片的树脂密封方法。 树脂密封方法包括：通过粘合环将芯片保持片附接到支撑基板的芯片保持片安装步骤;将半导体芯片的前侧附着到构成芯片保持片的粘合剂层的半导体芯片安装步骤 对应于粘合环内部的区域，用模制树脂密封所有半导体芯片的树脂密封步骤;从其上安装有半导体芯片的芯片保持片移除支撑基板的支撑基板去除步骤;以及 用模具树脂密封的芯片保持片剥离步骤，用从模塑树脂密封的每个半导体芯片的前侧剥离芯片保持片。

公开(公告)号：US08815644B2

公开(公告)日：2014-08-26

申请号：US13870490

申请日：2013-04-25

申请人： Disco Corporation

发明人： Karl Priewasser

IPC分类号： H01L21/00 ,  H01L21/683 ,  H01L21/78 ,  H01L21/82 ,  H01L21/67 ,  B81C1/00

CPC分类号： H01L21/6836 ,  B81C1/0088 ,  H01L21/67132 ,  H01L21/78 ,  H01L21/7806 ,  H01L21/784 ,  H01L21/82

摘要： A wafer processing method for processing a wafer having a device area and a peripheral marginal area surrounding the device area. The method includes: (i) attaching an adhesive tape having an annular adhesive layer only in a peripheral area thereof to the front side of the wafer, whereby the front side of the wafer is fully covered with the adhesive tape and the annular adhesive layer is positioned to correspond to the peripheral marginal area of the wafer, without the annular adhesive layer making contact with the device area; (ii) applying a laser beam to the wafer along division lines to thereby form a plurality of modified layers inside the wafer; (iii) attaching a protective tape to the back side of the wafer and peeling the adhesive tape from the front side of the wafer; and (iv) applying an external force to the wafer to divide the wafer.

摘要翻译： 一种晶片处理方法，用于处理具有围绕所述器件区域的器件区域和周边边缘区域的晶片。 该方法包括：（i）仅在其周边区域中将具有环状粘合剂层的粘合带附接到晶片的前侧，由此晶片的前侧完全被胶带覆盖，并且环形粘合剂层为 定位成对应于晶片的周边边缘区域，而环形粘合剂层与装置区域接触; （ii）沿分割线向晶片施加激光束，从而在晶片内部形成多个改性层; （iii）将保护带附着在晶片的背面，并从胶片的前侧剥离胶带; 和（iv）向晶片施加外力以分割晶片。

公开(公告)号：US20170365519A1

公开(公告)日：2017-12-21

申请号：US15628254

申请日：2017-06-20

申请人： DISCO CORPORATION

发明人： Karl Priewasser ,  Hitoshi Hoshino

IPC分类号： H01L21/8222 ,  B28D5/00 ,  B23K26/364 ,  B23K26/08 ,  H01L27/01 ,  H01L21/76

CPC分类号： H01L21/8222 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/08 ,  B23K26/083 ,  B23K26/359 ,  B23K26/364 ,  B23K26/402 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/52 ,  B28D5/0011 ,  B28D5/0029 ,  B28D5/0082 ,  H01L21/76 ,  H01L27/01

摘要： A wafer has a device area on one side with a plurality of devices partitioned by a plurality of division lines. Either side of the wafer is attached to an adhesive tape supported by a first annular frame. A modified region is formed in the wafer along the division lines by a laser. The wafer is placed on a support member whose outer diameter is smaller than an inner diameter of the first annular frame. After applying the laser beam, the adhesive tape is expanded thereby dividing the wafer along the division lines. A second annular frame is attached to a portion of the expanded adhesive tape. An inner diameter of the second annular frame is smaller than the outer diameter of the support member and smaller than the inner diameter of the first annular frame.